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| Application No. | Application Title | Issue Date |
| 20110317329 | CAPACITOR AND METHOD OF MAKING SAME A capacitor having a dielectric consisting of a glass layer with an alkali metal oxide content of at most 2 wt % and a thickness of at most 50 μm is provided. The capacitor includes at least two metal layers which are separated by the glass layer. The glass layer is pr... | 12/29/2011 |
| 20110286146 | DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT A dielectric ceramic composition includes BaTiO3 as a main component; as subcomponents, with respect to 100 moles of BaTiO3, 0.9 to 2.0 moles of an oxide of RA in terms of RA2O3, where RA is at least one selected from Dy, Gd a... | 11/24/2011 |
| 20110222206 | DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT A dielectric ceramic composition includes, as a main component, a compound having perovskite type crystal structure shown by a general formula ABO3, as subcomponents, in terms of respective element with respect to 100 moles of the compound, and 0.6 to 2.0 mol... | 09/15/2011 |
| 20110222205 | DIELECTRIC CERAMIC AND LAMINATED CERAMIC CAPACITOR A dielectric ceramic (and capacitor containing it) balancing high temperature load characteristics and temperature characteristics of capacitance even when layer thickness is less than 1 μmhas a mixture of different crystal grains containing a barium titanate compound ... | 09/15/2011 |
| 20110216473 | DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielect... | 09/08/2011 |
| 20110140525 | CONFORMAL DEPOSITION OF DIELECTRIC COMPOSITES BY ELECTROPHORESIS Techniques are generally described herein for the design, manufacture and use of composite dielectric materials. Embodiments include, but are not limited to, methods, apparatuses, and systems. Other embodiments may also be disclosed and claimed. Some techniques describe... | 06/16/2011 |
| 20110128670 | HIGH DIELECTRIC CONSTANT CERAMIC-POLYMER COMPOSITES, EMBEDDED CAPACITORS USING THE SAME, AND FABRICATION METHOD THEREOF Disclosed are ceramic-polymer composite consisting of aggregates of dielectric ceramic particles and polymer resin, and a fabrication method thereof, the method including aggregating dielectric ceramic particles to create aggregates, melting polymer resin in a solvent t... | 06/02/2011 |
| 20110128665 | Ceramic Capacitors for High Temperature Applications A ceramic capacitor having a ceramic dielectric layer positioned between a first electrode layer and a second electrode layer and methods of manufacturing the same are provided. The ceramic dielectric layer includes a niobium doped barium titanate, a sodium bismuth tita... | 06/02/2011 |
| 20110121378 | ZrXHfYSn1-X-YO2 FILMS AS HIGH K GATE DIELECTRICS The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of Zrx Hfy Sn1-... | 05/26/2011 |
| 20110110018 | HEXAGONAL TYPE BARIUM TITANATE POWDER, PRODUCING METHOD THEREOF, DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC COMPONENT Dielectric ceramic composition includes a hexagonal type barium titanate as a main component shown by a generic formula (Bai-αMα)A(Ti1-βMnβ)BO3 and having hexagonal structure wherein an eff... | 05/12/2011 |
| 20110058305 | Capacitor and High Frequency Component The invention relates to reducing the leakage current and insulation breakdown in a dielectric film stepped portion caused by a surface roughness of a dielectric film, and to enhancing insulation of a variable capacitor. A lower electrode layer (2), a dielectric ... | 03/10/2011 |
| 20110051315 | NANOSTRUCTURED DIELECTRIC MATERIALS FOR HIGH ENERGY DENSITY MULTI LAYER CERAMIC CAPACITORS A high energy density multilayer ceramic capacitor, having at least two electrode layers and at least one substantially dense polycrystalline dielectric layer positioned therebetween. The at polycrystalline dielectric layer has an average grain size of less than about 3... | 03/03/2011 |
| 20100328844 | DIELECTRIC CERAMIC AND MANUFACTURING METHOD THEREFOR AND LAMINATED CERAMIC CAPACITOR A laminated ceramic capacitor is provided which is excellent in reliability even when its dielectric ceramic layers thinned. For a dielectric ceramic in a laminated ceramic capacitor, a ceramic is used which includes a main component containing a barium titanate based c... | 12/30/2010 |
| 20100320520 | DIELECTRIC, CAPACITOR USING DIELECTRIC, SEMICONDUCTOR DEVICE USING DIELECTRIC, AND MANUFACTURING METHOD OF DIELECTRIC To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio o... | 12/23/2010 |
| 20100309607 | CAPACITOR SUBSTRATE STRUCTURE The disclosed is a capacitor substrate structure to reduce the high leakage current and low insulation resistance issue of organic/inorganic hybrid materials with ultra-high dielectric constant. The insulation layer, disposed between two conductive layers, includes mult... | 12/09/2010 |
| 20100302705 | Capacitors, And Methods Of Forming Capacitors Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concent... | 12/02/2010 |
| 20100265632 | THIN-FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each othe... | 10/21/2010 |
| 20100254067 | Method of making electronic ceramic components with mesh electrode A method of manufacturing electronic ceramic components, especially multilayer ceramic components, by applying a green ceramic layer through chemical coating methods on a mesh electrode of at least one sheet of conductive mesh to achieve extended ceramic layer thickness... | 10/07/2010 |
| 20100238604 | Surface mounting type high voltage capacitor with array structure Provided is a surface mounting type high voltage ceramic capacitor with an array structure that may form a plurality of capacitors in an array structure to thereby simultaneously mount the plurality of capacitors on a printed circuit board, and thus may reduce a work pr... | 09/23/2010 |
| 20100232087 | COMPLEX OXIDE FILM AND METHOD FOR PRODUCING SAME, COMPOSITE BODY AND METHOD FOR PRODUCING SAME, DIELECTRIC MATERIAL, PIEZOELECTRIC MATERIAL, CAPACITOR AND ELECTRONIC DEVICE The invention aims at providing a complex oxide film having a high relative dielectric constant and capacitance having low temperature-dependency, whose film thickness can be arbitrarily controlled, and a manufacturing method thereof, a composite body comprising the com... | 09/16/2010 |
| 20100226066 | CAPACITORS USING PREFORMED DIELECTRIC Devices for storing energy at a high density are described. The devices include a solid dielectric that is preformed to present a high exposed area onto which an electrode is formed. The dielectric material has a high dielectric constant (high relative permittivity) and... | 09/09/2010 |
| 20100208411 | Co-Doped Nickel Oxide A nickel oxide co-doped with a first alkali metal dopant and a second metal dopant selected from the group consisting of at least one of tin, antimony, indium, tungsten, iridium, scandium, gallium, vanadium, chromium, gold, yttrium, lanthanum, ruthenium, rhodium, molybd... | 08/19/2010 |
| 20100195261 | CAPACITORS USING PREFORMED DIELECTRIC Devices for storing energy at a high density are described. The devices include an electrode preformed to present a high exposed area onto which a dielectric is formed. The dielectric material has a high dielectric constant (high relative permittivity) and a high breakd... | 08/05/2010 |
| 20100142120 | DIELECTRIC CERAMIC AND CAPACITOR A dielectric ceramic includes crystal grains containing barium titanate as a main component, magnesium, a rare-earth element, and manganese, wherein the crystal grains have a cubic crystal structure; and the dielectric ceramic contains, per mole of barium, 0.033 to 0.08... | 06/10/2010 |
| 20090303657 | CRYSTALLOGRAPHICALLY ORIENTATED TANTALUM PENTOXIDE AND METHODS OF MAKING SAME Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H2). Art... | 12/10/2009 |
| 20090289328 | INSULATION FILM FOR CAPACITOR ELEMENT, CAPACITOR ELEMENT AND SEMICONDUCTOR DEVICE An insulation film includes niobium, oxygen and a metal element, and the insulation film has a band gap width of larger than 4.2 eV, and at least a portion of the insulation film includes an amorphous structure.... | 11/26/2009 |
| 20090219671 | COATING SOLUTION FOR FORMING HIGH DIELECTRIC CONSTANT THIN FILM AND METHOD FOR FORMING DIELECTRIC THIN FILM USING THE SAME Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoic ac... | 09/03/2009 |
| 20090207555 | ANTIFERROELECTRIC MULTILAYER CERAMIC CAPACITOR An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.... | 08/20/2009 |
| 20090207556 | DIELECTRIC CERAMIC AND CAPACITOR The invention relates to a ceramic dielectric material and to capacitors including the ceramic dielectric material. The ceramic dielectric material of the invention exhibits a high relative dielectric constant and a stable temperature characteristic of the relative diel... | 08/20/2009 |
| 20090173979 | ALD OF AMORPHOUS LANTHANIDE DOPED TiOX FILMS The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOX) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety of ... | 07/09/2009 |
| 20090161294 | Multi-band front end module A multi-band front end module and a method of manufacturing the multi-band front end module. The method may include forming a first circuit pattern on one side of an insulation layer, stacking a dielectric layer over the one side of the insulation layer, and forming a s... | 06/25/2009 |
| 20090121316 | Electronic Component with Reactive Barrier and Hermetic Passivation Layer An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conduct... | 05/14/2009 |
| 20090086407 | Dielectric ceramic composition and electronic device A dielectric ceramic composition of the invention comprises: BaTiO3 as a main component, MgO: 0.50 to 3.0 moles, MnO: 0.05 to 0.5 moles, oxide (RE12O3) of element selected from Sm, Eu, and Gd, oxide (RE22... | 04/02/2009 |
| 20090079442 | Piezo-Acoustic Thin Film Resonator Having a Crystalline Zinc Oxide Layer A capacitor structure includes a lower electrode layer disposed on a substrate, an upper electrode layer and a crystalline zinc oxide-containing dielectric layer interposed between the electrode layers. The amorphous dielectric intermediate layer is interposed between t... | 03/26/2009 |
| 20090073636 | POLYMER-CERAMIC COMPOSITES WITH EXCELLENT TCC Polymer-ceramic composite materials for use in the formation of capacitors, which materials exhibit very low changes in temperature coefficient of capacitance (TCC) in response to changes in temperature within the range of from about −55° C. to about 125° C. Specifi... | 03/19/2009 |
| 20090021889 | INSULATOR FILM, CAPACITOR ELEMENT, DRAM AND SEMICONDUCTOR DEVICE The insulator film of the present invention is suited for use as the insulator material of capacitor elements composing DRAM, is used as the insulator layer of a capacitor element provided with an insulator layer that is interposed between an upper electrode and a lower... | 01/22/2009 |
| 20090009927 | CERAMIC ELECTRONIC COMPONENT A ceramic electronic component includes a ceramic body and an internal electrode layers disposed within the ceramic body. The ceramic body is covered with a diffusion layer, wherein said diffusion layer is an oxide layer into which at least a part of elements contained ... | 01/08/2009 |
| 20080297979 | Dielectric ceramic composition and electronic device A dielectric ceramic composition comprising BamTiO2+m (note that “m” satisfies 0.99≦m≦1.01) and BanZrO2+n (note that “n” satisfies 0.99≦n≦1.01), an oxide of Mg, an oxide of R (note that R is at least one select... | 12/04/2008 |
| 20080239627 | High-Temperature Dielectric Materials and Capacitors Made Therefrom A ceramic dielectric composition suitable for preparing capacitors for use in high-temperature service conditions is disclosed. The ceramic material and capacitors made from it exhibit unique and heretofore unrealizable properties including low variation in capacitance ... | 10/02/2008 |
| 20080236878 | Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high... | 10/02/2008 |
