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"That’s an amazing invention, but who would ever want to use one of them?"
President Rutherford B. Hayes ; Said in 1876, after Alexander Graham Bell demonstrated the telephone to him at the White House
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| Application No. | Application Title | Issue Date |
| 20120126900 | SEMICONDUCTOR DEVICE A semiconductor device includes a semiconductor chip with first and second low noise amplifier for amplifying an inputted signal. The chip is mounted over a wiring substrate which includes first and second electrodes and first, second and third GND electrodes. The wirin... | 05/24/2012 |
| 20120068773 | HIGH FREQUENCY AMPLIFIER A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD... | 03/22/2012 |
| 20110260798 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE A semiconductor integrated circuit device includes: a substrate which has a first conductivity type and in which a first amplifier area and a second amplifier area are defined; a first well which has a second conductivity type, a first pocket well which has the first co... | 10/27/2011 |
| 20110255228 | BALANCE SIGNAL OUTPUT TYPE SENSOR There is provided a balance signal output type sensor producing a high quality balance signal output. There is provided a balance signal output type sensor including a capacitor unit having a first electrode serving as a movable electrode and a second electrode disposed... | 10/20/2011 |
| 20110199158 | Semiconductor device Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary cir... | 08/18/2011 |
| 20110169575 | AMPLIFIER CIRCUIT AND INTEGRATED CIRCUIT THEREFOR An amplifier circuit on a single die comprises a low voltage amplifier with a first common mode voltage and having an input and an output. A power amplifier has a second common mode voltage whose input is operably coupled to an output of the low voltage amplifier. The f... | 07/14/2011 |
| 20110169576 | HIGH FREQUENCY AMPLIFIER A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD... | 07/14/2011 |
| 20110115565 | CASCADED AMPLIFIERS WITH TRANSFORMER-BASED BYPASS MODE Cascaded amplifiers with a transformer-based bypass mode are described. In an exemplary design, an apparatus includes first and second amplifiers and a circuit. The first amplifier (e.g., a driver amplifier) provides amplification in a high gain mode and a bypass mode. ... | 05/19/2011 |
| 20110062311 | CIRCUIT AND METHOD FOR TEMPERATURE AND PROCESS INDEPENDENT TRANSIMPEDANCE AMPLIFIER ARRANGEMENT An integrated circuit transimpedance amplifier arrangement constituted of: a plurality of internal matched resistors; a current multiplier arranged to output a signal whose value is a function of an input current signal, an external resistor and a first set of the plura... | 03/17/2011 |
| 20110025423 | MILLIMETER-WAVE MONOLITHIC INTEGRATED CIRCUIT AMPLIFIER WITH OPPOSITE DIRECTION SIGNAL PATHS AND METHOD FOR AMPLIFYING MILLIMETER-WAVE SIGNALS Embodiments of a high-frequency millimeter-wave amplifier are generally described herein. The high-frequency millimeter-wave amplifier may be constructed on a substrate to operate at a frequency of at least 75 GHz. In some embodiments, the millimeter-wave amplifier may ... | 02/03/2011 |
| 20100271136 | Digital Control Interface In Heterogeneous Multi-Chip Module A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control sig... | 10/28/2010 |
| 20100231304 | SEMICONDUCTOR DEVICE In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by... | 09/16/2010 |
| 20100214023 | AMPLIFYING SYSTEM AND RELATED METHOD An amplifying system includes an amplifier operated according to a supply voltage, and a detector coupled to the amplifier for generating a first control signal to the amplifier to disable an output stage of the amplifier when the supply voltage reaches a threshold.... | 08/26/2010 |
| 20100188154 | Trans-impedance amplifier Systems and apparatus for converting an input current signal into two or more output voltage signals on an integrated circuit. In one aspect, an integrated circuit includes a first trans-impedance amplifier that includes a first cascode amplifier; and a second trans-imp... | 07/29/2010 |
| 20100109784 | MILLIMETER WAVE MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF FORMING SUCH INTEGRATED CIRCUITS A description is provided of a high-frequency, multi-stage, millimeter wave amplifier integrated circuit, and of a method for designing and constructing the circuit. The methods and structures have been created to enable the construction of an amplifier offering substan... | 05/06/2010 |
| 20090302926 | On-Chip Source Termination in Communication Systems An apparatus and system are provided to adjust an output voltage of an integrated circuit (IC) die. For instance, the apparatus can include an on-chip source termination and a bias generator. The bias generator can be configured to provide a source current to the on-chi... | 12/10/2009 |
| 20090231043 | DISTRIBUTED AMPLIFIER AND INTEGRATED CIRCUIT A plurality of transistors operate as amplification elements. An input side coupling circuit comprises a plurality of distributed constant lines connected in series, one terminal of which is an input terminal and the other terminal of which is a bias input terminal. Eac... | 09/17/2009 |
| 20090212873 | Semiconductor device Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary cir... | 08/27/2009 |
| 20090195320 | IMPLEMENTING LAYOUT OF INTEGRATED CIRCUIT CONTAINING OPERATIONAL AMPLIFIER A method for implementing a layout of an integrated circuit containing an OP (operational amplifier) is disclosed. The method includes constructing an output path connecting an output terminal of the OP to an output pad of the OP; and constructing a feedback path connec... | 08/06/2009 |
| 20090039966 | Multi-Stage RF Amplifier Including MMICs and Discrete Transistor Amplifiers in a Single Package A MMIC amplifier stage and a discrete transistor amplifier stage are housed in a single package. In one aspect, a multi-stage RF amplifier includes a package with an RF input lead and an RF output lead. The signal path from the RF input lead to the RF output lead includ... | 02/12/2009 |
| 20080297261 | Circuits and Methods for Implementing Transformer-Coupled Amplifiers at Millimeter Wave Frequencies Circuits and methods are provided for building integrated transformer-coupled amplifiers with on-chip transformers that are designed to resonate or otherwise tune parasitic capacitances to achieve frequency tuning of amplifiers at millimeter wave operating frequencies.... | 12/04/2008 |
| 20080238552 | SEMICONDUCTOR DEVICE A semiconductor device includes a phase compensation circuit 6 using a MOS capacitor with a structure in which an insulating film is disposed between a gate electrode formed on a semiconductor substrate and a diffusion layer. The phase compensation circuit includ... | 10/02/2008 |
| 20080239839 | METHOD FOR USING A SPATIALLY DISTRIBUTED AMPLIFIER CIRCUIT An exemplary amplifier circuit includes a first group of spatially distributed final amplifier stages having a first configuration, and a second group of spatially distributed final amplifier stages having a second configuration different than the first configuration. B... | 10/02/2008 |
| 20080174371 | LAYOUT OF POWER DEVICE A layout of a power device is provided. The layout includes a substrate, a unit array, a plurality of first, second, third and fourth signal paths, and a first, second, third and fourth port. The unit array with a plurality of rows is disposed on the substrate. Each row... | 07/24/2008 |
| 20080164947 | Semiconductor device Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary cir... | 07/10/2008 |
| 20080164946 | Coupling Net and Mmic Amplifier Microwave coupling network comprising a passive resistive pi net and a coupling capacitor is coupled to a branching point. The branching point is coupling to respectively a plurality of common drain FET amplifier stages or respectively to common collector BJT amplifier ... | 07/10/2008 |
| 20080116976 | Low noise amplifier with multiple inputs and multiple outputs Satellite set-top boxes (STB) are increasingly being designed with multiple tuners, making them capable of receiving more than one program at a time. In addition, satellite STBs are increasingly being designed with multiple inputs, to permit reception of additional chan... | 05/22/2008 |
| 20080024229 | STACKED RF POWER AMPLIFIER A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be impleme... | 01/31/2008 |
| 20080012645 | Thermally distributed integrated power amplifier module An integrated power amplifier (PA) module formed on a substrate includes a first cluster of transistor cells positioned in a first portion of the substrate; a second cluster of transistor cells positioned in a second portion of the substrate and spaced apart from the fi... | 01/17/2008 |
| 20070252652 | Dual op amp IC with single low noise op amp configuration A multiple op amp IC with a single low noise op amp configuration comprises at least two op amp circuits fabricated on a common substrate. The IC can be configured such that the multiple op amps are connected in parallel to form a single op amp having output drive and i... | 11/01/2007 |
| 20070146079 | Monolithically integrated power amplifier device A monolithically integrated microwave frequency high power amplifier device comprises a plurality of transistors connected in a load modulation configuration wherein the number of the transistors that is operational depends on the drive level. The transistors have each ... | 06/28/2007 |
| 20070115066 | Radio-frequency amplifier and radio-frequency wireless communication apparatus A radio-frequency amplifier having an input-side line portion and an output-side line portion including an input slot line and an output slot line extending in parallel formed on a substrate. In a connecting portion of a transistor, a gate electrode G, a drain electrode... | 05/24/2007 |
| 20070115067 | Output amplifier structure with bias compensation In one embodiment, an output transistor and a bias compensation device are placed in proximity to each other on the same package substrate. The bias compensation device is electrically isolated but thermally coupled to the output transistor, and is configured to provide... | 05/24/2007 |
| 20070057731 | On-chip harmonic termination for RF power amplifier applications A radio frequency (“RF”) amplifier as disclosed herein includes an on-chip power transistor formed on a substrate and an on-chip harmonic termination formed on the same substrate. The on-chip harmonic termination is configured to provide a short-circuit termination ... | 03/15/2007 |
| 20060290431 | Semiconductor device Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary cir... | 12/28/2006 |
| 20060244540 | Differential amplifier circuitry formed on semiconductor substrate with rewiring technique In a differential amplifier circuitry formed on a semiconductor substrate, first and second transistors constitute a differential pair of the differential amplifier circuitry. First and second pads are connected with emitters of the first and second transistors, respect... | 11/02/2006 |
| 20060170503 | Small-sized on-chip CMOS power amplifier having improved efficiency A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause... | 08/03/2006 |
| 20060139101 | Step-down circuit with stabilized voltage The present invention provides a semiconductor integrated circuit device equipped with a negative feedback amplifier circuit or a step-down circuit which realizes stabilization of an output voltage effectively in response to a variation in power supply voltage. A consta... | 06/29/2006 |
| 20060119426 | Dual band power amplifier module for wireless communication devices A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers each including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control sign... | 06/08/2006 |
| 20060103470 | Power amplifier module A semiconductor chip is wired with a bonding wire on a conductor pattern formed on a substrate, the bonding wire is connected to a bonding position at a midpoint of a distributed constant line formed by the conductor pattern and divides the line into a first inductor an... | 05/18/2006 |
