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"Transmission of documents via telephone wires is possible in principle, but the apparatus required is so expensive that it will never become a practical proposition."
Dennis Gabor, British physicist
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| Application No. | Application Title | Issue Date |
| 20120049934 | LOW-LEAKAGE DIODES AND METHODS OF FORMING THE SAME Low leakage diodes and methods of forming the same are disclosed. In one embodiment an apparatus includes a designed or parasitic bipolar transistor having an emitter, a base and a collector. The bipolar transistor is configured to operate as a diode, the diode having r... | 03/01/2012 |
| 20120049935 | ALTERNATING CURRENT (AC) LEAKAGE CURRENT REDUCTION CIRCUIT A solid-state power distribution system having a first solid-state switching device (SSSD) and a second solid-state switching device (SSSD) for distributing power from an AC power source to a load includes a leakage current reduction circuit for reducing leakage current... | 03/01/2012 |
| 20120044015 | Universal Digital Input Module in a Process Automation Controller In a process automation controller, a universal digital input module is provided. The universal digital input module comprises a plurality of digital input channels, each channel to sink a first current at a first voltage level associated with an input having a digital ... | 02/23/2012 |
| 20120001680 | ISOLATION CIRCUIT The present disclosure includes various method, device, and system embodiments for isolation circuits. One such isolation circuit embodiment includes: a first transistor configured for connection to a supply voltage via a first terminal; a register connected to the firs... | 01/05/2012 |
| 20110309876 | THIN FILM TRANSISTOR AND DISPLAY DEVICE A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, ... | 12/22/2011 |
| 20110304385 | BIAS CIRCUIT AND WIRELESS COMMUNICATION DEVICE INCLUDING THE BIAS CIRCUIT A bias circuit according to the present invention includes: a transistor for supplying a bias current from the emitter of the transistor; an emitter potential generating device for supplying a potential to the emitter of the transistor; a switch element; and a voltage s... | 12/15/2011 |
| 20110291691 | CHIP AND CHIP TEST SYSTEM According to an example embodiment, a chip includes a plurality of circuit blocks, a power switch unit configured to supply power to the plurality of circuit blocks, and a power switch controller configured to control the power switch unit in response to an external con... | 12/01/2011 |
| 20110254614 | System and Method of Transistor Switch Biasing in a High Power Semiconductor Switch A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.... | 10/20/2011 |
| 20110227653 | Electronic Circuit Output Stage An electronic circuit including: a first branch, placed between two terminals of application of a D.C. voltage, including a series connection of a first constant current source, of a first diode-connected N-channel MOS transistor, of a first diode-connected P-channel MO... | 09/22/2011 |
| 20110221510 | SOI RADIO FREQUENCY SWITCH WITH ENHANCED SIGNAL FIDELITY AND ELECTRICAL ISOLATION A doped contact region having an opposite conductivity type as a bottom semiconductor layer is provided underneath a buried insulator layer in a bottom semiconductor layer. At least one conductive via structure extends from an interconnect-level metal line through a mid... | 09/15/2011 |
| 20110193619 | SEMICONDUCTOR ELECTRONIC COMPONENTS AND CIRCUITS An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of t... | 08/11/2011 |
| 20110187459 | EMITTER-FOLLOWER TYPE BIAS CIRCUIT An emitter-follower bias circuit supplying a bias voltage to the base of an amplification transistor includes: a depletion mode FET boosting a reference voltage; and an emitter-follower circuit generating the bias voltage in response to the reference voltage boosted by ... | 08/04/2011 |
| 20110175673 | SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM INCLUDING THE SAME A pair of power nodes of a logic circuit that needs to output a high level at the time of standby is connected to third and fifth dummy power lines and a pair of power nodes of a logic circuit that needs to output a low level at the time of standby are connected to seco... | 07/21/2011 |
| 20110175672 | TUNABLE METAMATERIALS Examples of the present invention include a metamaterial comprising a plurality of resonators disposed on a substrate, the substrate comprising a dielectric support layer and a relatively thin semiconductor layer, having a Schottky junction between at least one conducti... | 07/21/2011 |
| 20110169550 | Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yiel... | 07/14/2011 |
| 20110169556 | ANALOG CIRCUIT AND DISPLAY DEVICE AND ELECTRONIC DEVICE The invention provides an analog circuit that decreases an effect of variation of a transistor. By flowing a bias current in a compensation operation, a voltage between the gate and source of the transistor to be compensated is held in a capacitor. In a normal operation... | 07/14/2011 |
| 20110169555 | Mitigating Side Effects Of Impedance Transformation Circuits The present disclosure relates to mitigating side effects of impedance transformation circuits.... | 07/14/2011 |
| 20110163794 | POWER SUPPLY CONTROL CIRCUIT A power supply control circuit comprises an output transistor which controls supply of electric power to a load and a gate driving circuit which generates control signals “a” and “b” for controlling on/off of the output transistor 32 based on an external ... | 07/07/2011 |
| 20110142263 | SYSTEM AND METHOD FOR BIASING ACTIVE DEVICES An apparatus for generating a bias voltage for an active device is disclosed, comprising a first voltage source, a capacitive element adapted to generate a charge in response to the first voltage source, and a first switching element adapted to deliver the charge to gen... | 06/16/2011 |
| 20110140766 | BOOSTER CIRCUIT AND VOLTAGE SUPPLY CIRCUIT A booster circuit includes a pump circuit having a plurality of charge pump circuits for outputting a boosted voltage to a first output terminal. The booster circuit also includes a clock adjusting circuit that generates, from a first clock signal, a second clock signal... | 06/16/2011 |
| 20110133776 | ARRAYS OF TRANSISTORS WITH BACK CONTROL GATES BURIED BENEATH THE INSULATING FILM OF A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE This invention provides a semiconductor device structure formed on a conventional semiconductor-on-insulator (SeOI) substrate and including an array of patterns, each pattern being formed by at least one field-effect transistor, each FET transistor having, in the thin f... | 06/09/2011 |
| 20110133818 | SEMICONDUCTOR DEVICE A semiconductor device includes a semiconductor layer of a first conductivity type; a deep well of a second conductivity type formed in a portion of an upper layer portion of the semiconductor layer; a well of the first conductivity type formed in a portion of an upper ... | 06/09/2011 |
| 20110128069 | METHOD OF AND STRUCTURE FOR RECOVERING GAIN IN A BIPOLAR TRANSISTOR A method of recovering gain in a bipolar transistor includes: providing a bipolar transistor including an emitter, a collector, and a base disposed between junctions at the emitter and the collector; reverse biasing the junction disposed between the emitter and the base... | 06/02/2011 |
| 20110121887 | SEMICONDUCTOR DEVICE An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically conn... | 05/26/2011 |
| 20110121864 | START SIGNAL DETECTOR CIRCUIT The nonlinearity effect of a rectifying element is enhanced, and further a resonant circuit is used to enlarge the input amplitude. Furthermore, the rectifying efficiency of a detection rectifier circuit is enhanced, thereby allowing the gain of an amplifier circuit in ... | 05/26/2011 |
| 20110111705 | System and Method of Silicon Switched Power Delivery Using a Package In one particular embodiment, an integrated circuit includes a package and a substrate electrically and physically coupled to the package. The package includes a first package-substrate connection, a second package-substrate connection, and metallization coupling the fi... | 05/12/2011 |
| 20110095784 | APPARATUS AND METHOD FOR PROVIDING MULTI-MODE CLOCK SIGNALS Apparatus and methods for providing multi-mode clock signals are disclosed. In some embodiments, a multi-mode driver configured to receive a first clock signal, and to selectively output a different clock signal in response to one or more signals from a controller is pr... | 04/28/2011 |
| 20110095813 | MOS TRANSISTOR RESISTOR, FILTER, AND INTEGRATED CIRCUIT A MOS transistor including a first MOS transistor M1 to be used as a resistor; an input voltage source 1 connected to the source of the first MOS transistor for applying an input voltage Vin; and a gate voltage source 6 connected to the gate of the ... | 04/28/2011 |
| 20110089994 | Threshold Voltage Modification Via Bulk Voltage Generator The present disclosure relates to threshold voltage modification via a voltage generator connected to bulk nodes of transistors.... | 04/21/2011 |
| 20110089995 | Graphene device and method of manufacturing the same Provided is a graphene device and a method of manufacturing the same. The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be... | 04/21/2011 |
| 20110063017 | SEMICONDUCTOR DEVICE A semiconductor device includes a first circuit, a second circuit, and a first voltage dividing circuit. The first circuit is coupled to a first terminal. The first circuit is operable by a first voltage supplied from the first terminal. The second circuit is coupled th... | 03/17/2011 |
| 20110050329 | SEMICONDUCTOR INTEGRATED CIRCUIT A semiconductor integrated circuit includes a cascode circuit having a transistor, a detector circuit and a bias generator circuit. A bias is applied to a substrate of the transistor. The detector circuit generates a signal related to a threshold voltage of the transist... | 03/03/2011 |
| 20110025406 | Power Semiconductor Component Including a Potential Probe A power semiconductor component including a semiconductor body and two load terminals is provided. Provided furthermore is a potential probe positioned to tap an electric intermediate potential of the semiconductor body at a tap location of the semiconductor body for an... | 02/03/2011 |
| 20110025407 | DYNAMICALLY DRIVEN DEEP N-WELL CIRCUIT A circuit can include an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, a circuit node, and a connection element connecting the n-well to the circuit node. The connection element can include a diode... | 02/03/2011 |
| 20110018614 | SEMICONDUCTOR SWITCH A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an i... | 01/27/2011 |
| 20110001553 | METHOD OF DRIVING REVERSE CONDUCTING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the ... | 01/06/2011 |
| 20100327958 | Leakage Current Mitigation in a Semiconductor Device A dormant mode target semiconductor device within a leakage current target unit is identified for mitigating leakage current to prevent it from reaching catastrophic runaway. A leakage current shift monitor unit is electrically connected to the output node of the leakag... | 12/30/2010 |
| 20100321098 | SYSTEMS AND METHODS FOR INTEGRATED CIRCUITS COMPRISING MULTIPLE BODY BIASING DOMAINS Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment of the present invention, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of sec... | 12/23/2010 |
| 20100308919 | Methods and devices for leakage current reduction Methods and devices for leakage current reduction are described. A regulator transistor is connected to a switch to bias the transistor with a first voltage during an ON state and a second voltage during the OFF state of the transistor. The switchable bias allows leakag... | 12/09/2010 |
| 20100308921 | LEAKAGE CURRENT REDUCTION IN A POWER REGULATOR A regulator with decreased leakage and low loss for a power amplifier is described. Switching circuitry is used to connect the regulator input bias to a bias control voltage when the power amplifier is to be operated in an on condition or to a voltage generator when the... | 12/09/2010 |
