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| Application No. | Application Title | Issue Date |
| 20120126243 | TRANSISTOR INCLUDING SHALLOW TRENCH AND ELECTRICALLY CONDUCTIVE SUBSTRATE FOR IMPROVED RF GROUNDING Disclosed is an RF power FET or HEMT including an electrically-conductive substrate, a grounding metallization layer disposed on a bottom surface of the electrically-conductive substrate, an active area comprising at least one cell including source, gate and drain elect... | 05/24/2012 |
| 20120126290 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor l... | 05/24/2012 |
| 20120104408 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME In an aspect of a semiconductor device, there are provided a substrate, a transistor including an electron transit layer and an electron supply layer formed over the substrate, a nitride semiconductor layer formed over the substrate and connected to a gate of the transi... | 05/03/2012 |
| 20120080724 | SEMICONDUCTOR DEVICE A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided bet... | 04/05/2012 |
| 20120068227 | SEMICONDUCTOR DEVICE A normally off semiconductor device with a reduced off-state leakage current, which is applicable to a power switching element, includes: a substrate; an undoped GaN layer formed above the substrate; an undoped AlGaN layer formed on the undoped GaN layer; a source elect... | 03/22/2012 |
| 20120049243 | GAN BASED HEMTS WITH BURIED FIELD PLATES A transistor with source and drain electrodes formed in contact with an active region and a gate between the source and drain electrodes and in contact with the active region. A first spacer layer is on at least part of the active region surface between the gate and dra... | 03/01/2012 |
| 20120049955 | COMPOUND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, POWER SUPPLY DEVICE AND HIGH-FREQUENCY AMPLIFIER A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end o... | 03/01/2012 |
| 20120049244 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS A semiconductor device includes: a substrate; a semiconductor stacked structure, provided over the substrate, including an electron transit layer and an electron supply layer; a gate electrode, a source electrode, and a drain electrode provided over the semiconductor st... | 03/01/2012 |
| 20120043588 | SEMICONDUCTOR DEVICE A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a two-dimensional carrier gas layer; a source electrode; a drain electrode; a gate electrode; and an auxiliary electrode located above the two-dimensional carrier gas layer betwe... | 02/23/2012 |
| 20120043586 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed on the compound semiconductor layer, a first groove disposed from the bac... | 02/23/2012 |
| 20120043587 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer formed in contact with the first semiconductor layer, and a third semiconductor layer of a second conductivity type formed in contact with the second s... | 02/23/2012 |
| 20120043553 | Hybrid Semiconductor Device Having a GaN Transistor and a Silicon MOSFET A hybrid device including a silicon based MOSFET operatively connected with a GaN based device.... | 02/23/2012 |
| 20120037958 | POWER ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain a... | 02/16/2012 |
| 20120032232 | SEMICONDUCTOR DEVICE A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a ... | 02/09/2012 |
| 20120032188 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. Th... | 02/09/2012 |
| 20120025202 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME A semiconductor device includes a silicon substrate; a buffer layer provided on the silicon substrate and has a band gap greater than GaN; a first GaN layer provided on the buffer layer; and a second GaN layer provided directly on the first GaN layer, a carbon concentra... | 02/02/2012 |
| 20120025269 | SEMICONDUCTOR STRUCTURE COMPRISING PILLAR A semiconductor structure comprises a substrate and a metal layer disposed over the substrate. The metal layer comprises a first electrical trace and a second electrical trace. The semiconductor structure comprises a conductive pillar disposed directly on and in electri... | 02/02/2012 |
| 20120025271 | SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, METHOD OF JUDGING QUALITY OF SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE There is provided a high-performance compound semiconductor epitaxial wafer that has an improved linearity of the voltage-current characteristic, a producing method thereof, and a judging method thereof. Provided is a semiconductor wafer including a compound semiconduct... | 02/02/2012 |
| 20120025270 | ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffe... | 02/02/2012 |
| 20120012894 | PERFORMANCE OF NITRIDE SEMICONDUCTOR DEVICES A method of forming a transistor over a nitride semiconductor layer includes surface-treating a first region of a nitride semiconductor layer and forming a gate over the first region. Surface-treating the first region can cause the transistor to have a higher intrinsic ... | 01/19/2012 |
| 20120007049 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, whe... | 01/12/2012 |
| 20120001230 | Multi-gate semiconductor devices A multi-gate semiconductor device with inter-gate conductive regions being connected to balance resistors is provided. The multi-gate semiconductor device comprises a substrate, a multilayer structure formed upon the substrate, a first ohmic electrode, a second ohmic el... | 01/05/2012 |
| 20110316049 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Provided are a vertical nitride semiconductor device in which occurrence of leak currents can be suppressed, and a method for manufacturing such nitride semiconductor device. A nitride semiconductor device, which is a vertical HEMT, is provided with an n− t... | 12/29/2011 |
| 20110310920 | EPITAXIAL GROWTH OF IN-PLANE NANOWIRES AND NANOWIRE DEVICES Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processi... | 12/22/2011 |
| 20110303952 | High Electron Mobility Transistors And Methods Of Fabricating The Same A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the cha... | 12/15/2011 |
| 20110291159 | Stress release structures for metal electrodes of semiconductor devices This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients ... | 12/01/2011 |
| 20110291160 | FIELD EFFECT TRANSISTOR A field effect transistor includes a nitride-based semiconductor multi-layer structure, a source electrode (108), a drain electrode (109), a protective film (110), and a gate electrode (112) that is provided in a recess structure, which is fo... | 12/01/2011 |
| 20110284865 | HETEROJUNCTION FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING HETEROJUNCTION FIELD EFFECT TRANSISTOR, AND ELECTRONIC DEVICE A heterojunction filed effect transistor with a low access resistance, a low on resistance, and the like, a method for producing a heterojunction filed effect transistor and an electron device are provided. In the heterojunction field effect transistor, an electron tran... | 11/24/2011 |
| 20110284868 | High Voltage III-Nitride Transistor A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconduct... | 11/24/2011 |
| 20110284928 | SEMICONDUCTOR DEVICE A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmi... | 11/24/2011 |
| 20110284862 | III-nitride switching device with an emulated diode Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching device fabricated on a substrate comprising a high threshold GaN transistor coupled across a low threshold GaN tra... | 11/24/2011 |
| 20110278598 | SEMICONDUCTOR STRUCTURE, AN INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE A monolithic semiconductor structure includes a stack of layers. The stack includes a substrate; a first layer made from a first semiconductor material; and a second layer made from a second semiconductor material. The first layer is situated between the substrate and t... | 11/17/2011 |
| 20110278590 | Semiconductor Devices Having Gates Including Oxidized Nickel and Related Methods of Fabricating the Same Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related met... | 11/17/2011 |
| 20110278647 | III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND METHOD OF FABRICATING III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a... | 11/17/2011 |
| 20110272743 | High Electron Mobility Transistors Including Lightly Doped Drain Regions And Methods Of Manufacturing The Same High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a cha... | 11/10/2011 |
| 20110272742 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFCTURING SAME A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source... | 11/10/2011 |
| 20110272740 | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing r... | 11/10/2011 |
| 20110260174 | GaN BASED POWER DEVICES WITH INTEGRATED PROTECTION DEVICES: STRUCTURES AND METHODS Exemplary embodiments provide structures and methods for power devices with integrated clamp structures. The integration of clamp structures can protect the power device, e.g., from electrical overstress (EOS). In one embodiment, active devices can be formed over a subs... | 10/27/2011 |
| 20110260217 | SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconduc... | 10/27/2011 |
| 20110260216 | GaN BASED POWER DEVICES WITH INTEGRATED PROTECTION DEVICES: STRUCUTRES AND METHODS Exemplary embodiments provide structures and methods for power devices with integrated clamp structures. The integration of clamp structures can protect the power device, e.g., from electrical overstress (EOS). In one embodiment, active devices can be formed over a subs... | 10/27/2011 |
