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| Application No. | Application Title | Issue Date |
| 20110272671 | SEMICONDUCTOR DEVICE AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE A semiconductor device comprising a quantum dot and a plurality of layers, wherein said plurality of layers comprises: a first layer; a stressor layer; and a patterned layer wherein said stressor layer overlies said first layer and said patterned layer overlies said str... | 11/10/2011 |
| 20110006281 | SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.... | 01/13/2011 |
| 20100327260 | Single Electron Transistor Operating at Room Temperature and Manufacturing Method for Same The present invention relates to a single electron transistor operating at room temperature and a manufacturing method for same. More particularly, the present invention relates to a single electron transistor operating at room temperature, in which a quantum dot or a s... | 12/30/2010 |
| 20100283034 | Concentration - gradient alloyed semiconductor quantum dots, LED and white light applications The present invention involves concentration-gradients alloyed quantum dots that have shell modifications and ligands that lower the barrier for electronic quantum dot activation, and electronic and photonic applications of such quantum dots. The present invention also ... | 11/11/2010 |
| 20100140586 | QUANTUM DOTS HAVING COMPOSITION GRADIENT SHELL STRUCTURE AND MANUFACTURING METHOD THEREOF Provided are quantum dots having a gradual composition gradient shell structure which have an improvedluminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be ... | 06/10/2010 |
| 20100123120 | A SINGLE-PHOTON DETECTOR WITH A QUANTUM DOT AND A NANO-INJECTOR A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of ... | 05/20/2010 |
| 20100108986 | METHOD FOR THE PRODUCTION OF QUANTUM DOTS EMBEDDED IN A MATRIX, AND QUANTUM DOTS EMBEDDED IN A MATRIX PRODUCED USING THE METHOD A method for producing quantum dots embedded in a matrix on a substrate includes the steps of: depositing a precursor on the substrate, the precursor including at least one first metal or a metal compound; contacting the deposited precursor and uncovered areas of the su... | 05/06/2010 |
| 20100045169 | NANO ELECTRONIC DEVICES Nano material devices are provided. In one embodiment, a nano material device comprises a substrate, a first layer disposed on the substrate, a second layer and a third layer The first layer is configured to include a first set of electrodes at least partially parallel ... | 02/25/2010 |
| 20100009338 | Novel gold nanostructures and methods of use The invention is drawn to novel nanostructures comprising hollow nanospheres and nanotubes for use as chemical sensors, conduits for fluids, and electronic conductors. The nanostructures can be used in microfluidic devices, for transporting fluids between devices and st... | 01/14/2010 |
| 20090315019 | Optical device having a quantum-dot structure Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the sp... | 12/24/2009 |
| 20090267051 | Method of preparing quantum dot-inorganic matrix composites A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating... | 10/29/2009 |
| 20090224229 | POLARITY INVERSION OF TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODES The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also s... | 09/10/2009 |
| 20090223565 | SELF-OSCILLATION COMMUNICATION MODULE Provided is a self-oscillation communication module in which an optical device, a solar battery, and a radio frequency (RF) device are monolithic-integrated. When an active layer of the optical device contains In(Ga)As quantum dots, the optical device can emit light ran... | 09/10/2009 |
| 20090101888 | METHOD OF MANUFACTURING IN (As) Sb SEMICONDUCTOR ON LATTICE-MISMATCHED SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME Disclosed is a method of manufacturing a semiconductor device whereby InAs(1-x)Sbx semiconductor layer is formed on an easily available and economical semiconductor substrate such as a GaAs substrate or a Si substrate. According to the method, a qu... | 04/23/2009 |
| 20090078930 | Quantum device, manufacturing method of the same and controlling method of the same By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then,... | 03/26/2009 |
| 20080277645 | Ferromagneic Influence on Quantum Dots A semiconductor magnetic body comprises a layer (11 15) intended to trap electrons, wherein said layer (11 15) is surrounded on both sides by a magnetic layer (16, 17). This leads to the creation of ferromagnetic character in spatially limited regio... | 11/13/2008 |
| 20080246021 | Single electron transistor and method of manufacturing the same A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion... | 10/09/2008 |
| 20080237576 | Voltage Controlled Computing Element for Quantum Computer A computing element for use in a quantum computer has at least three coupled quantum dots, and at least one gate for applying an electric field to manipulate the state of said qubit.... | 10/02/2008 |
| 20080191193 | IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species... | 08/14/2008 |
| 20080142787 | Fermionic bell-state analyzer and quantum computer using same The Bell-state analyzer includes a semiconductor device having quantum dots formed therein and adapted to support Fermions in a spin-up and/or spin-down states. Different Zeeman splittings in one or more of the quantum dots allows resonant quantum tunneling only for ant... | 06/19/2008 |
| 20080073640 | Method of manufacturing semiconductor device The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming q... | 03/27/2008 |
| 20080067498 | Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate 10, the step of removing the oxide to form a concavity 16 in the position from which t... | 03/20/2008 |
| 20070287288 | Method of preparing metal nanocrystal Methods of preparing capped metal nanocrystals are provided. One method includes reacting a metal nanocrystal precursor with a reducing agent in a solution having a platinum catalyst. ... | 12/13/2007 |
| 20070221986 | Memory device using quantum dots A memory device, which includes a memory layer having quantum dots uniformly dispersed in organic material disposed between an upper electrode layer and a lower electrode layer. The memory device is advantageous because it is nonvolatile and inexpensive, and realizes hi... | 09/27/2007 |
| 20070108434 | Quantum dot based pressure switch A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material region... | 05/17/2007 |
| 20070096078 | Organic-inorganic hybrid nanocomposite thin films for high-powered and/or broadband photonic device applications and methods for fabricating the same and photonic device having the thin films An organic-inorganic hybrid nanocomposite thin film for a high-powered and/or broadband photonic device having an organic ligand-coordinated semiconductor quantum dot layer, a photonic device having the same, and a method of fabricating the same are provided. The organi... | 05/03/2007 |
| 20070018342 | Devices with nanocrystals and methods of formation An aspect relates to a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites are created on a surface of the substrate. The creation of the nucleation sites includes implanting ions with an energy and a d... | 01/25/2007 |
| 20060220000 | Photon source A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and change of state means for changing the state of the carriers within the qu... | 10/05/2006 |
