Class 257/E21.151 - Applied layer being silicon or silicide or SIPOS, e.g., polysilicon, porous silicon (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.148. This subclass
No. of applications: 3
Last issue date: 01/12/2012

Application No.	Application Title	Issue Date
20120009770	Method of Forming Conductive Lines of Semiconductor Memory Device A method of forming the conductive lines of a semiconductor memory device comprises forming a first polysilicon layer over an underlying layer, forming first polysilicon patterns by patterning the first polysilicon layer, filling the space between the first polysilicon ...	01/12/2012
20110180910	VERTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME A vertical semiconductor device with improved junction profile and a method of manufacturing the same are provided. The vertical semiconductor device includes a pillar vertically extended from a surface of a semiconductor substrate, a silicon layer formed in a bit line ...	07/28/2011
20080254587	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING SELF-ALIGNED PROCESS TO INCREASE DEVICE PACKING DENSITY A method for fabricating a semiconductor integrated circuit having a self-aligned structure, the method comprises the steps of: providing a semiconductor substrate; forming a gate dielectric layer, a first polysilicon layer, and a first capping layer on top of the semic...	10/16/2008

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