Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Application No. | Application Title | Issue Date |
| 20120126348 | SYSTEMS AND METHODS FOR A FOUR-LAYER CHIP-SCALE MEMS DEVICE Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a f... | 05/24/2012 |
| 20120128019 | MONOLITHICALLY INTEGRATED MULTI-WAVELENGTH HIGH-CONTRAST GRATING VCSEL ARRAY Multiple-wavelength VCSEL array apparatus and method having a high contrast grating (HCG) mirror which can be implemented on a single substrate in which only the dimensions of the HCG (e.g., duty cycle or the period) need be changed to alter the wavelength of a given VC... | 05/24/2012 |
| 20120126350 | BATCH FABRICATED 3D INTERCONNECT In an example, a method of fabricating one or more vertical interconnects is provided. The method includes patterning and stacking a plurality of wafers to form a wafer stack. A plurality of apertures can be formed in the wafer stack within one or more saw streets of th... | 05/24/2012 |
| 20120126346 | METHOD FOR CREATING A MICROMECHANICAL MEMBRANE STRUCTURE AND MEMS COMPONENT In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least... | 05/24/2012 |
| 20120106582 | HEAT SINK FOR A PULSED HIGH-POWER LASER DIODE A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The ... | 05/03/2012 |
| 20120108029 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an orga... | 05/03/2012 |
| 20120107994 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer include... | 05/03/2012 |
| 20120104552 | Capacitors in Integrated Circuits and Methods of Fabrication Thereof In one embodiment, a capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. Second metal bars and second vias are disposed in... | 05/03/2012 |
| 20120104518 | PRESSURE SENSOR A pressure sensor has a sensor body at least partly formed with an electrically insulating material, particularly a ceramic material, defining a cavity facing on which is a diaphragm provided with an electric detector element, configured for detecting a bending of the d... | 05/03/2012 |
| 20120105385 | ELECTROMECHANICAL SYSTEMS APPARATUSES AND METHODS FOR PROVIDING ROUGH SURFACES This disclosure provides systems, methods, and apparatus for producing roughness in an electromechanical device by nucleation under plasma CVD conditions. In one aspect, a substrate and at least a first layer are provided. The disclosure further provides gas phase nucle... | 05/03/2012 |
| 20120107967 | METHOD FOR FABRICATION OF A SEMICONDUCTOR DEVICE AND STRUCTURE A method of manufacturing a semiconductor wafer, the method including: providing a first monocrystalline layer including first transistors and interconnecting metal layers to perform at least one first electronic function; providing a second monocrystalline layer on top... | 05/03/2012 |
| 20120107966 | MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the ca... | 05/03/2012 |
| 20120083049 | SYSTEM AND METHOD FOR LASER PROCESSING AT NON-CONSTANT VELOCITIES A method is disclosed for on-the-fly processing at least one structure of a group of structures with a pulsed laser output, The method includes the steps of relatively positioning the group of structures and the pulsed laser output axis with non-constant velocity, and a... | 04/05/2012 |
| 20120080763 | ELECTRONIC COMPONENT, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING THE ELECTRONIC COMPONENT An electronic component includes: a semiconductor element including a circuit; a vibration element; a first electrode arranged on a first surface of the semiconductor element and connected to the circuit and the vibration element arranged on the first surface side; a se... | 04/05/2012 |
| 20120083093 | ISOLATION STRUCTURE FOR A MEMORY CELL USING AL2O3 DIELECTRIC The invention provides, in one exemplary embodiment, an isolation gate formed over a substrate for biasing the substrate and providing isolation between adjacent active areas of an integrated circuit structure, for example a DRAM memory cell. An aluminum oxide (Al2O3) i... | 04/05/2012 |
| 20120070931 | METHODS FOR REDUCED STRESS ANCHORS Methods of anchoring components of a Micro-Electro-Mechanical Systems (MEMS) device to a substrate. An exemplary embodiment has a trace anchor bonded to a substrate, a device anchor bonded to the substrate, and an anchor flexure configured to flexibly couple the trace a... | 03/22/2012 |
| 20120070956 | Method for Manufacturing Memory Element A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor havi... | 03/22/2012 |
| 20120068279 | DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagn... | 03/22/2012 |
| 20120068280 | Magnetic Nano-Ring Device and Method of Fabrication A magnetic nano-ring device and method of fabrication includes providing a substrate; forming at least one nano-pillar on the substrate; depositing a plurality of electrodes on the substrate; depositing an anti-ferromagnetic layer on a first electrode of the plurality o... | 03/22/2012 |
| 20120068276 | MICROSTRUCTURE WITH AN ENHANCED ANCHOR The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on th... | 03/22/2012 |
| 20120068363 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH DIE PADDLES AND METHOD OF MANUFACTURE THEREOF A method of manufacture of an integrated circuit packaging system includes: forming a package paddle group having a first package paddle electrically isolated from a second package paddle; attaching an integrated circuit device on the first package paddle and the second... | 03/22/2012 |
| 20120052649 | BISTABLE NANOSWITCH A non-volatile bistable nano-electromechanical switch is provided for use in memory devices and microprocessors. The switch employs carbon nanotubes as the actuation element. A method has been developed for fabricating nanoswitches having one single-walled carbon nanotu... | 03/01/2012 |
| 20120049299 | COMPOSITE WAFER SEMICONDUCTOR A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is... | 03/01/2012 |
| 20120049298 | MEMS DEVICE ASSEMBLY AND METHOD OF PACKAGING SAME A MEMS device assembly (20) includes a MEMS die (22) and an integrated circuit (IC) die (24). The MEMS die (22) includes a MEMS device (36) formed on a substrate (38) and a cap layer (34). A packaging process (72) ... | 03/01/2012 |
| 20120050751 | MICROMECHANICAL TUNABLE FABRY-PEROT INTERFEROMETER, AN INTERMEDIATE PRODUCT, AND A METHOD FOR PRODUCING THE SAME The invention relates to controllable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing prior art interferometers includes a risk of deterioration of mirrors during the etching of the sacrificial layer (123). Accordi... | 03/01/2012 |
| 20120043649 | Method for making microchannels on a substrate, and substrate including such microchannels The present invention relates to a process for fabricating microchannels on a substrate and to a substrate comprising these microchannels, the invention being especially applicable to the fabrication of microstructured substrates for microelectronic, microfluidic and/or... | 02/23/2012 |
| 20120043627 | MEMS Sensor Device With Multi-Stimulus Sensing and Method of Fabricating Same A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54<... | 02/23/2012 |
| 20120045368 | Chemical Coating of Microwell for Electrochemical Detection Device The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemic... | 02/23/2012 |
| 20120038021 | OVERLAY MARK ENHANCEMENT FEATURE Methods and apparatuses for alignment are disclosed. An exemplary method includes providing a substrate having a device region and an alignment region; forming a first material layer over the substrate; forming a device feature and a dummy feature in the first material ... | 02/16/2012 |
| 20120037921 | Electrical Devices With Enhanced Electrochemical Activity and Manufacturing Methods Thereof In some aspects, a device is provided having a member with a region of enhanced electrochemical activity. In one aspect, a sensor of enhanced electrochemical activity is provided for detecting an analyte concentration level in a bio-fluid sample. The sensor may include ... | 02/16/2012 |
| 20120038963 | MEMS DEVICE AND METHOD OF MANUFACTURING MEMS DEVICE A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion f... | 02/16/2012 |
| 20120036919 | NANOWIRE SENSOR HAVING A NANOWIRE AND ELECTRICALLY CONDUCTIVE FILM A nanowire sensor includes a first electrode, a second electrode, and a sensing element connecting the first electrode and the second electrode. The sensing element includes at least one nanowire connecting the first electrode and the second electrode and an electricall... | 02/16/2012 |
| 20120037877 | ONE-MASK PHASE CHANGE MEMORY PROCESS INTEGRATION An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a first metalization layer (Metal 1... | 02/16/2012 |
| 20120038011 | MAGNETIC TUNNELING JUNCTION DEVICE AND ITS MANUFACTURING METHOD A magnetic pinned layer is formed over a substrate. An insulating film is formed over the magnetic pinned layer. A recess is formed in and through the insulating film. A tunneling insulating film is formed over a bottom of the recess. A first magnetic free layer is form... | 02/16/2012 |
| 20120038356 | Methods and Apparatuses for Low-Noise Magnetic Sensors Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semico... | 02/16/2012 |
| 20120031192 | Semiconductor strain gauge array A strain monitoring system including an array of semiconductor strain gauges. Each strain gauge in the array of strain gauges includes a lithographically fabricated 4-resistor bridge for providing a voltage potential corresponding to the strain in the bridge and thin fi... | 02/09/2012 |
| 20120033832 | MICROPHONE AND ACCELEROMETER The invention relates to a method for manufacturing a micromachined microphone and an accelerometer from a wafer 1 having a first layer 2, the method comprising the steps of dividing the first layer 2 into a microphone layer 5 and into an acc... | 02/09/2012 |
| 20120034724 | METHOD AND APPARATUS FOR MEMS OSCILLATOR A resonator includes a CMOS substrate having a first electrode and a second electrode. The CMOS substrate is configured to provide one or more control signals to the first electrode. The resonator also includes a resonator structure including a silicon material layer. T... | 02/09/2012 |
| 20120032282 | MICROELECTROMECHANICAL SYSTEM (MEMS) CARRIER AND METHOD OF FABRICATING THE SAME An MEMS carrier is provided that includes a core board having a first surface and an opposite second surface, a circuit layer formed on the first surface and having a plurality of conductive pads, and a through hole formed through the first and the second surfaces; a ca... | 02/09/2012 |
| 20120032289 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information... | 02/09/2012 |
