Did You Know...
...that the Eveready Battery began as an invention called the "electric flowerpot," which was a tube with a battery and light bulb inside? The idea was to fasten this gizmo to the side of a flowerpot so it would illuminate the flowers from the bottom. The idea died on the vine and the businessman who licensed the flower pot, Conrad Huber, was left with a pile of useless tubes -- until he found a way to market them as batteries to light the world!
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| Application No. | Application Title | Issue Date |
| 20120104432 | SEMICONDUCTOR LIGHT EMITTING DEVICE A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor la... | 05/03/2012 |
| 20120104431 | LIGHT EMITTING ELEMENT According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a s... | 05/03/2012 |
| 20120104433 | GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having ... | 05/03/2012 |
| 20120068207 | OPTICAL DEVICE, SEMICONDUCTOR WAFER, METHOD OF PRODUCING OPTICAL DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least on... | 03/22/2012 |
| 20120068191 | METHOD OF CONTROLLING STRESS IN GROUP-III NITRIDE FILMS DEPOSITED ON SUBSTRATES Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varyin... | 03/22/2012 |
| 20120049179 | GROUP-III NITRIDE-BASED LIGHT EMITTING DEVICE HAVING ENHANCED LIGHT EXTRACTION EFFICIENCY AND MANUFACTURING METHOD THEREOF A method for enhancing light extraction efficiency of a group-III nitride-based light emitting device is disclosed. By roughening a n-type group-III nitride-based cladding layer or an undoped group-III nitride-based layer, a reflecting layer is formed. Because of gaps o... | 03/01/2012 |
| 20120049152 | SOLID STATE LIGHTING DEVICES WITH LOW CONTACT RESISTANCE AND METHODS OF MANUFACTURING Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconduc... | 03/01/2012 |
| 20120043566 | AlGaInP Light-Emitting Diode Having Vertical Structure and Method for Manufacturing the Same A method for manufacturing the AlGaInP LED having a vertical structure is provided, including: growing, epitaxially, a buffer layer, an n-type contact layer, an n-type textured layer, a confined layer, an active layer, a p-type confined layer and a p-type window layer i... | 02/23/2012 |
| 20120043522 | High-reflectivity and low-defect density LED structure The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which ... | 02/23/2012 |
| 20120037930 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, OPTOELECTRONIC COMPONENT, AND COMPONENT ARRANGEMENT HAVING A PLURALITY OF OPTOELECTRONIC COMPONENTS A method for producing optoelectronic components including A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation, B) applying separating structures on the semiconductor layer, C) applying a mult... | 02/16/2012 |
| 20120032209 | SEMICONDUCTOR LIGHT EMITTING DEVICE According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and... | 02/09/2012 |
| 20120032210 | Semiconductor Device with Efficient Carrier Recombination The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of... | 02/09/2012 |
| 20120025233 | LIGHT EMITTING DEVICE According to one embodiment, a light emitting device includes a light emitting layer, a first electrode, a first and second layers, and a cladding layer. The first layer has a first impurity concentration of a first conductivity type, and allows a carrier to be diffused... | 02/02/2012 |
| 20120025232 | III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME Embodiments of the present invention provides III-nitride light-emitting diodes, which primarily include a first electrode, a n-type gallium nitride (GaN) nanorod array consisted of one or more n-type GaN nanorods ohmic contacting with the first electrode, one or more i... | 02/02/2012 |
| 20120018753 | ULTRAVIOLET LIGHT EMITTING DIODE DEVICES AND METHODS FOR FABRICATING THE SAME A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum ga... | 01/26/2012 |
| 20120018752 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost ... | 01/26/2012 |
| 20120012855 | SOLID-STATE LIGHT EMITTERS HAVING SUBSTRATES WITH THERMAL AND ELECTRICAL CONDUCTIVITY ENHANCEMENTS AND METHOD OF MANUFACTURE Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light emitter (SSLE) and a package substrate and (b) improved electr... | 01/19/2012 |
| 20120007113 | SEMICONDUCTOR LIGHT EMITTING DEVICE According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a sid... | 01/12/2012 |
| 20120007114 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP AND ILLUMINATING DEVICE A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light e... | 01/12/2012 |
| 20120001196 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and ... | 01/05/2012 |
| 20110316020 | EPITAXIAL WAFER FOR LIGHT EMITTING DIODE An epitaxial wafer for a light emitting diode, including a GaAs substrate, a light emitting unit provided on the GaAs substrate, and a strain adjustment layer provided on the light emitting unit, wherein the light emitting unit has a strained light emitting layer having... | 12/29/2011 |
| 20110316018 | ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers... | 12/29/2011 |
| 20110316019 | Nanoelectronic Structure and Method of Producing Such The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The vo... | 12/29/2011 |
| 20110309324 | SOLID STATE DEVICES WITH SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon structure ... | 12/22/2011 |
| 20110303931 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME Disclosed are a semiconductor light emitting diode and a method for fabricating the same. The method comprises forming a crystalline nitride semiconductor layer on a substrate, forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semic... | 12/15/2011 |
| 20110303933 | DIODE HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.... | 12/15/2011 |
| 20110303932 | Organic, Radiation-Emitting Component and Method for Producing the Same A method for producing an organic, radiation-emitting component is specified, wherein at least one layer (10) containing an emitter material is produced in a radiation-emitting region (4) of the component, wherein the layer (10) is produced by means... | 12/15/2011 |
| 20110291127 | LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer... | 12/01/2011 |
| 20110284890 | LIGHT EMITTING DEVICE GROWN ON A RELAXED LAYER In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type reg... | 11/24/2011 |
| 20110272719 | LED STRUCTURE The present invention discloses an LED structure, wherein an N-type current spreading layer is interposed between N-type semiconductor layers to uniformly distribute current flowing through the N-type semiconductor layer. The N-type current spreading layer includes at l... | 11/10/2011 |
| 20110266555 | METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers des... | 11/03/2011 |
| 20110248298 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second cond... | 10/13/2011 |
| 20110241041 | LIGHT EMITTING DIODE THERMALLY ENHANCED CAVITY PACKAGE AND METHOD OF MANUFACTURE Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. In one embodiment, a cavity is formed on a substrate to contain an LED and phosphor layer. The substrate has a channel separating the substrate... | 10/06/2011 |
| 20110241042 | NANOCRYSTAL-BASED OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME The invention discloses a nanocrystal-based optoelectronic device and method of fabricating the same, such as light-emitting diode, photodetector, solar cell, etc. The optoelectronic device according to the invention includes a substrate of a first conductive type, N ac... | 10/06/2011 |
| 20110227106 | LIGHT EMITTING DIODES AND METHODS FOR MANUFACTURING LIGHT EMITTING DIODES Light emitting diodes and methods for manufacturing light emitting diodes are disclosed herein. In one embodiment, a method for manufacturing a light emitting diode (LED) comprises applying a first light conversion material to a first region on the LED and applying a se... | 09/22/2011 |
| 20110220925 | LIGHT EMITTING DIODE WAFER-LEVEL PACKAGE WITH SELF-ALIGNING FEATURES Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. A patterned wafer has a plurality of individual LED attachment sites, and an alignment wafer has a plurality of individual cavities. The patter... | 09/15/2011 |
| 20110220866 | SOLID STATE LIGHTING DEVICES GROWN ON SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material... | 09/15/2011 |
| 20110220928 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light emitting element includes a stacked body, a first and second electrode, a support substrate, a protective film and a dielectric film. The stacked body includes a first semiconductor, a second semiconductor layer and a l... | 09/15/2011 |
| 20110215351 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting p... | 09/08/2011 |
| 20110215352 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active... | 09/08/2011 |
