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| Application No. | Application Title | Issue Date |
| 20070158863 | Liquid crystal cells with uniform cell gap and methods of manufacture A laminate structure and method of manufacture, such as a processed silicon wafer with an overlying layer or cover, includes a first layer or substrate which has a generally-planar region and a peripheral contoured region with falloff from a planar region of the first l... | 07/12/2007 |
| 20070158784 | Semiconductor Device and Manufacturing Method Thereof In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metal... | 07/12/2007 |
| 20070080335 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a semiconductor structure, comprising a gettering region proximate to a device region in a semiconductor wafer. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids through a s... | 04/12/2007 |
| 20070075401 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a memory device, comprising at least one gettering region, a memory array, a plurality of word lines and bit lines, and control circuitry. The gettering region is formed in a semiconductor substrate. The gettering region includes... | 04/05/2007 |
| 20060138642 | Micromechanical getter anchor One embodiment provides an anchor to hold getter materials in place within a micromechanical device package substrate, said anchor comprising: a first cavity face; and a second cavity face. The cavity faces define an anchor cavity and mechanically retain a getter away f... | 06/29/2006 |
| 20060001181 | Terminal structure of multi-layer substrate and method for forming the same Disclosed is a terminal structure of a multi-layer substrate and a method for forming the same. In the terminal structure, a plurality of terminals are formed on at least two adjacent substrate layers, each of the terminals being spaced from adjacent ones to a predeterm... | 01/05/2006 |
| 20050104100 | Solid-state image sensor A solid-state image sensor of the present invention has a plurality of pixel cells that generate signal charges in accordance with incident light. It is characterized by having a gettering region within the area of a pixel cell. The gettering region, which is disposed c... | 05/19/2005 |
| 20050045900 | Protected organic electronic device structures incorporating pressure sensitive adhesive and desiccant Organic electronic device structures are provided, which comprise: (a) a first portion comprising a substrate and an organic electronic device region (e.g., an OLED region) disposed over the substrate; (b) a second portion comprising a cover and a getter region; and (c)... | 03/03/2005 |
| 20050032335 | Method to chemically remove metal impurities from polycide gate sidewalls An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also rel... | 02/10/2005 |
| 20050029683 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is anneal... | 02/10/2005 |
| 20050017273 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is anneal... | 01/27/2005 |
| 20050006796 | Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the ... | 01/13/2005 |
