Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Application No. | Application Title | Issue Date |
| 20110269261 | DEVICES AND METHODS OF PROTECTING A CADMIUM SULFIDE FOR FURTHER PROCESSING Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap ... | 11/03/2011 |
| 20110140129 | LIGHT SOURCE WITH IMPROVED MONOCHROMATICITY Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED... | 06/16/2011 |
| 20110140128 | MONOCHROMATIC LIGHT SOURCE WITH HIGH ASPECT RATIO Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The re... | 06/16/2011 |
| 20110121319 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting s... | 05/26/2011 |
| 20100084664 | ZINC SULFIDE SUBSTRATES FOR GROUP III-NITRIDE EPITAXY AND GROUP III-NITRIDE DEVICES A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride cr... | 04/08/2010 |
| 20080020552 | Semiconductor substrates having low defects and methods of manufacturing the same A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semi... | 01/24/2008 |
| 20070131161 | DESIGN AND FABRICATION OF 6.1-A FAMILY SEMICONDUCTOR DEVICES USING SEMI-INSULATING ALSB SUBSTRATE For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while es... | 06/14/2007 |
| 20070128746 | GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocat... | 06/07/2007 |
| 20070102709 | P-TYPE GROUP II-VI SEMICONDUCTOR COMPOUNDS A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI se... | 05/10/2007 |
| 20060160345 | Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices A method to achieve high quality III-nitride epitaxial layers including AlN, AlGaN, GaN, InGaN, and AlInGaN, by supplying group III precursors constantly and group V precursors periodically with the epitaxial growth systems including metal organic chemical vapor deposit... | 07/20/2006 |
| 20060011925 | Radiation-emitting semiconductor element and method for producing the same This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal su... | 01/19/2006 |
| 20050280006 | Semiconductor device having low interface state density and method for fabricating the same The semiconductor device comprises an intermediate layer formed on a semiconductor substrate 6, the intermediate layer 12 being formed of an oxide containing a first element which is either of a III group element and a V group element, an insulation film f... | 12/22/2005 |
| 20050218411 | Hafnium nitride buffer layers for growth of GaN on silicon Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 Om. ... | 10/06/2005 |
| 20050199883 | Method for depositing a group III-nitride material on a silicon substrate and device therefor The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on the... | 09/15/2005 |
| 20050079650 | Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate... | 04/14/2005 |
| 20050001218 | Double-gated transistor circuit An OR gate circuit includes double-gated four terminal transistor with independent gate control. First and second inputs are independently coupled to the top and bottom gates of the transistor. The drain is coupled to an output and precharged to a low voltage. An input ... | 01/06/2005 |
