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A self defense weapon formed as a memo pad and which is easily held by a person's fingers, therefore making it possible to provide protection from a mugger and also to quickly and easily write a record or a message without failure of missing or forgetting significant information under a stressful situation.
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| Application No. | Application Title | Issue Date |
| 20120012967 | Black silicon based metal-semiconductor-metal photodetector A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped st... | 01/19/2012 |
| 20110233382 | Method and Apparatus for High Resolution Photon Detection Based on Extraordinary Optoconductance (EOC) Effects The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hy... | 09/29/2011 |
| 20110089516 | RECTIFIER Provided is a rectifier such as a detector in which a cutoff frequency may be increased in a view point different from the reduction in size of the structure. The rectifier includes: a Schottky barrier portion including a Schottky electrode; a barrier portion having a r... | 04/21/2011 |
| 20100244174 | HIGHLY-DEPLETED LASER DOPED SEMICONDUCTOR VOLUME A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n... | 09/30/2010 |
| 20100200941 | PHOTODIODE, OPTICAL COMMUNICATION DEVICE, AND OPTICAL INTERCONNECTION MODULE Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The p... | 08/12/2010 |
| 20100090226 | DIAMOND UV-RAY SENSOR Au base electrode materials have fatal disadvantages, such as inferior adhesion to diamond, low mechanical strength, and low thermal stability. A diamond UV sensor is provided which includes a photoconductive or Schottky optical sensor elem... | 04/15/2010 |
| 20090134486 | PHOTODIODE, METHOD FOR MANUFACTURING SUCH PHOTODIODE, OPTICAL COMMUNICATION DEVICE AND OPTICAL INTERCONNECTION MODULE Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer (1) and a pair of metal electrodes (2) which are arranged on the surface of the semiconductor layer (<... | 05/28/2009 |
| 20070254463 | Semiconductor device and method of manufacturing the same According to an aspect of the present invention, there is provided a semiconductor device including a semiconductor substrate which includes a number of chip areas, a processed film which is formed on the semiconductor substrate, and a ring-shaped pattern which is forme... | 11/01/2007 |
| 20070034898 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a sec... | 02/15/2007 |
| 20060259881 | Semiconductor circuit device and circuit simulation method for the same An inventive semiconductor circuit device includes an N-well and a P-well. The N-well is provided with PMIS active areas surrounded by a trench isolation, and the P-well is provided with NMIS active areas surrounded by the trench isolation. The PMIS active areas are eac... | 11/16/2006 |
| 20060145282 | Light sensor located above an integrated circuit A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer res... | 07/06/2006 |
| 20060108658 | Functional device and method for producing the same, and image pickup device and method for producing the same A method of producing a functional device comprising an electrode layer provided as an upper layer of a layer containing an organic material, the layer being as a functional layer, wherein a step of patterning the electrode layer comprises a high speed etching step of e... | 05/25/2006 |
| 20050224804 | Optical property normalization for a transparent electrical device Optical property normalization for a transparent electrical device is described. In an embodiment, an electrical device includes a plurality of laterally displaced regions that are substantially transparent. Each region of the plurality of regions includes a normalized ... | 10/13/2005 |
| 20050145969 | Back-illuminated msm module The invention relates to a BIMSM element (M,M′), in which at least the substrate (1,1′), the electrode pair (2) and the photosensitive layer (3) are combined in a monolithic structure. According to the invention, at least one electrode of the el... | 07/07/2005 |
| 20050145971 | Semiconductor device and method of manufacturing the same A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicate formation free energy and ca... | 07/07/2005 |
| 20050145970 | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates... | 07/07/2005 |
| 20050045982 | Semiconductor device with novel junction termination A semiconductor device (10, 100) comprising a Schottky charge transfer junction and a novel junction termination design. The device provides improved breakdown performance and reliability at reduced cost. The device may be fabricated by conventional technology on... | 03/03/2005 |
