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| Application No. | Application Title | Issue Date |
| 20120104382 | Photo diode, method of manufacturing the photo-diode, and photo sensor including the photo diode A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic reg... | 05/03/2012 |
| 20120080726 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE Disclosed herein is a solid-state imaging device including: a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photo... | 04/05/2012 |
| 20120068225 | BISPECTRAL MULTILAYER PHOTODIODE DETECTOR AND METHOD FOR MANUFACTURING SUCH A DETECTOR A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity typ... | 03/22/2012 |
| 20120068294 | Image Sensor with Decreased Optical Interference Between Adjacent Pixels An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal ... | 03/22/2012 |
| 20120068287 | Highly Sensitive Photo-Sensing Element and Photo-Sensing Device Using the Same According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are ma... | 03/22/2012 |
| 20120050590 | METHOD OF MANUFACTURING OPTICAL SENSOR, OPTICAL SENSOR, AND CAMERA INCLUDING OPTICAL SENSOR A method of manufacturing an optical sensor includes providing a semiconductor wafer including a plurality of pixel areas, providing a light transmissive substrate including a light transmissive wafer with a plurality of light transmissive members attached thereto, the ... | 03/01/2012 |
| 20120049308 | TRIAZINE RING-CONTAINING POLYMER AND FILM-FORMING COMPOSITION COMPRISING SAME A polymer containing a triazine ring-containing repeating unit structure represented by, for example, formula (23) or (24), which alone can achieve high heat resistance, high transparency, high refraction index, high solubility and low volume shrinkage, without adding a... | 03/01/2012 |
| 20120025082 | LOW-NOISE SEMICONDUCTOR PHOTODETECTORS A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out... | 02/02/2012 |
| 20120018829 | TEMPERATURE-ADJUSTED SPECTROMETER A temperature-adjusted spectrometer can include a light source and a temperature sensor.... | 01/26/2012 |
| 20120018828 | Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials A method of processing sodium doping for thin-film photovoltaic material includes forming a metallic electrode on a substrate. A sputter deposition using a first target device comprising 4-12 wt % Na2SeO3 and 88-96 wt % copper-gallium species is us... | 01/26/2012 |
| 20120001288 | SUB-PIXEL NBN DETECTOR A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or m... | 01/05/2012 |
| 20120001283 | Germanium Photodetector A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer... | 01/05/2012 |
| 20110298079 | SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE A semiconductor element includes: a p-type semiconductor region; an n-type light-receiving surface buried region buried in the semiconductor region; an n-type charge accumulation region buried in the semiconductor region, continuously to the light-receiving surface buri... | 12/08/2011 |
| 20110297831 | Small Low-Profile Optical Proximity Sensor In an embodiment, the invention provides a proximity sensor including a transmitter die, a receiver die, an ASIC die, a lead frame, wire bonds, a first transparent encapsulant, a second transparent encapsulant, and an opaque encapsulant. The transmitter die, the receive... | 12/08/2011 |
| 20110291218 | PHOTODIODE AND PHOTODIODE ARRAY A photodiode array PDA1 is provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer 32. The photodiode array PDA1 is provided with a p− type semiconductor layer 33 formed on... | 12/01/2011 |
| 20110278686 | Semiconductor device and method of manufacturing semiconductor device Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate (1), an n-type well (2) having a predetermined depth and formed in a predetermined region of the p-type substrate (1), and a ... | 11/17/2011 |
| 20110266446 | LIGHT DETECTION CIRCUIT FOR AMBIENT LIGHT AND PROXIMITY SENSOR A circuit for implementing an ambient light sensing mode and a proximity sensing mode includes a light sensor, a light source, and a controller coupled to the light sensor and the light source. The controller is configured to process outputs from the light sensor before... | 11/03/2011 |
| 20110266644 | SEMICONDUCTOR PHOTODETECTION ELEMENT A semiconductor photodetection element SP has a silicon substrate 21 comprised of a semiconductor of a first conductivity type, having a first principal surface 21a and a second principal surface 21b opposed to each other, and having a... | 11/03/2011 |
| 20110233703 | PHOTO DETECTOR DEVICE, PHOTO SENSOR AND SPECTRUM SENSOR A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor r... | 09/29/2011 |
| 20110233701 | PHOTOELECTRIC CONVERSION DEVICE AND SOLID-STATE IMAGING DEVICE A photoelectric conversion device comprising a photoelectric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made... | 09/29/2011 |
| 20110233702 | SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD OF DESIGNING SEMICONDUCTOR APPARATUS, AND ELECTRONIC APPARATUS A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common... | 09/29/2011 |
| 20110227180 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a solid-state imaging device includes a multilayer wiring layer, a semiconductor substrate, an impurity diffusion region of a second conductivity type, an anti-reflection film, a color filter, and a metallic layer. The semiconductor substrat... | 09/22/2011 |
| 20110227137 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in... | 09/22/2011 |
| 20110221956 | SOLID-STATE IMAGE PICKUP DEVICE, A CAMERA MODULE AND A METHOD FOR MANUFACTURING THEREOF A solid-state image pickup device includes a solid-state image sensor chip having a solid-state image sensor having a photosensitive element formed on a main surface of a semiconductor substrate and chip electrodes led to the back surface of the semiconductor substrate,... | 09/15/2011 |
| 20110221017 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ADHESIVE FILM, AND LIGHT-RECEIVING DEVICE A photosensitive resin composition includes (A) an alkali-soluble resin, (B) an epoxy resin, and (C) a photopolymerization initiator, the epoxy resin (B) being an epoxy resin having a naphthalene skeleton and/or an epoxy resin having a triphenylmethane skeleton. A semic... | 09/15/2011 |
| 20110204214 | METHOD AND SYSTEM FOR DETECTING LIGHT A light detection system is disclosed. The system comprises a light absorbing layer made of a semiconductor having majority carriers and minority carriers, and being incorporated with bandgap modifying atoms at a concentration selected so as to allow generation of photo... | 08/25/2011 |
| 20110193187 | ELECTRODE MEMBER FOR SPECIFIC DETECTION OF ANALYTE USING PHOTOCURRENT Disclosed is an electrode member for specific detection of an analyte using a photocurrent. The electrode member has at least a conductive substrate and an electron-accepting substance provided on said conductive substrate. The aforementioned electron-accepting substanc... | 08/11/2011 |
| 20110194000 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer, a charge blocking layer, an intermediate layer. The photoelectric conversion layer contains an organic material between the electrodes. The charge blocking layer is dispo... | 08/11/2011 |
| 20110146779 | Sub-wavelength structure layer, method for fabricating the same and photoelectric conversion device applying the same The present invention relates to a method for fabricating a sub-wavelength structure layer, including: forming a metal film on a passivation layer, an n-GaN layer or a transparent conductive oxide layer; performing thermal treatment to form self assembled metal nano par... | 06/23/2011 |
| 20110147870 | PHOTODETECTOR WITH VALENCE-MENDING ADSORBATE REGION AND A METHOD OF FABRICATION THEREOF According to an embodiment, a photodetector is provided, including a detector region, a first contact region forming an interface with the detector region, and a first valence mending adsorbate region between the first contact region and the detector region.... | 06/23/2011 |
| 20110134298 | PIXEL, PIXEL FORMING METHOD, IMAGING DEVICE AND IMAGING FORMING METHOD A pixel is provided with a photodiode region which includes a photoelectric conversion portion for receiving light and generating electrons, and a charge storage portion for storing electric charge. The pixel is configured in such a manner that an electron exclusion reg... | 06/09/2011 |
| 20110133203 | TRANSPARENT CERAMIC PHOTO-OPTICAL SEMICONDUCTOR HIGH POWER SWITCHES A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to ... | 06/09/2011 |
| 20110127627 | SENSING ENVIRONMENTAL PARAMETER THROUGH STRESS INDUCED IN IC A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film cov... | 06/02/2011 |
| 20110121353 | OPTOELECTRONIC ARCHITECTURE HAVING COMPOUND CONDUCTING SUBSTRATE Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a ... | 05/26/2011 |
| 20110101479 | PHOTOVOLTAIC DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.... | 05/05/2011 |
| 20110095387 | SEMICONDUCTOR DEVICES HAVING AN ENHANCED ABSORPTION REGION AND ASSOCIATED METHODS Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 μm, wherein the e... | 04/28/2011 |
| 20110095308 | PROCESS FOR FORMING AN ELECTROACTIVE LAYER There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material o... | 04/28/2011 |
| 20110089513 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE A semiconductor device has an active region formed on a semiconductor substrate, a trench-type element isolation region formed on the semiconductor substrate, and a diffusion region in which fluorine is diffused that surrounds the element isolation region and is formed ... | 04/21/2011 |
| 20110079866 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS A method for manufacturing a solid-state image pickup device is provided. In this method, a pixel isolation member is formed in a semiconductor substrate including pixels, and the thickness of the substrate is reduced by CMP. For forming the pixel isolation member, a fi... | 04/07/2011 |
| 20110079709 | WIDE BAND SENSOR A sensor and method of sensing is disclosed. The sensor is designed with a number of layers that are each able to sense a range of electromagnetic radiation. The sensor has two terminals for measuring the output signal of the sensor. The output signal of the sensor can ... | 04/07/2011 |
