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Class 257/429 - Charged or elementary particles


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the particle energy is in the form
No. of applications: 52
Last issue date: 05/24/2012


1    
Application No.Application TitleIssue Date
20120126095DETECTION APPARATUS AND RADIATION DETECTION SYSTEM
A detection apparatus includes conversion elements and switch elements disposed below the conversion elements; insulating layers are disposed between the conversion elements and switch elements. Each conversion element includes a first electrode corresponding to a switc...
05/24/2012
20120081013Energy Conversion Device
According to one embodiment, an energy conversion device comprises a nuclear battery, a light source coupled to the nuclear battery and operable to receive electric energy from the nuclear battery and radiate electromagnetic energy, and a photocell operable to receive t...
04/05/2012
20120043633RADIATION DETECTOR
According to a radiation detector of this invention, a common electrode for bias voltage application and a lead wire for bias voltage supply are connected through a conductive plate as a planarly formed plate interposed therebetween. Since the conductive plate is connec...
02/23/2012
20120043632METHOD TO PLANARIZE THREE-DIMENSIONAL STRUCTURES TO ENABLE CONFORMAL ELECTRODES
Methods for fabricating three-dimentional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is i...
02/23/2012
20120012958CHARGED PARTICLE COLLECTOR FOR A CMOS IMAGER
Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles ...
01/19/2012
20120012957NEUTRON DETECTOR WITH WAFER-TO-WAFER BONDING
A method of manufacturing a neutron detector comprises forming a first wafer by at least forming an oxide layer on a substrate, forming an active semiconductor layer on the oxide layer, and forming an interconnect layer on the active semiconductor layer, forming at leas...
01/19/2012
20120007197SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM
A solid-state imaging apparatus comprising a plurality of pixels each including a photoelectric conversion element, and a light shielding layer which covers the photoelectric conversion element is provided. The light shielding layer comprises a first light shielding por...
01/12/2012
20120001282RADIATION DETECTOR
A radiation detector of a compact size and producing almost no image defect is disclosed, comprising a first radiation-transmissive substrate, a first adhesive layer, a second radiation-transmissive substrate, a scintillator layer and an output substrate provided with a...
01/05/2012
20110308593MODIFIED CADMIUM TELLURIDE LAYER, A METHOD OF MODIFYING A CADMIUM TELLURIDE LAYER, AND A THIN FILM DEVICE HAVING A CADMIUM TELLURIDE LAYER
A layer including modified cadmium telluride and unmodified cadmium telluride disposed within the cadmium telluride layer. The modified area includes a concentration of telluride that is greater than the concentration of telluride in the unmodified cadmium telluride are...
12/22/2011
20110298071HIGH POWER DENSITY BETAVOLTAIC BATTERY
To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one e...
12/08/2011
20110291210BETAVOLTAIC POWER CONVERTER DIE STACKING
A power converter comprises a first die and a second die. Each die comprises a semiconductor substrate comprising a junction for converting nuclear radiation particles to electrical energy, the junction of each semiconductor substrate comprising a first side and a secon...
12/01/2011
20110266643Solid state neutron detector
A low-cost device for the detection of thermal neutrons. Thin layers of a material chosen for high absorption of neutrons with a corresponding release of ionizing particles are stacked in a multi-layer structure interleaved with thin layers of hydrogenated amorphous sil...
11/03/2011
20110248366RADIATION-DETECTING DEVICE AND METHOD OF MANUFACTURING SAME
A method of manufacturing a radiation-detecting device including spaced first columnar scintillators, second columnar scintillators which are located between the neighboring first columnar scintillators and which are spaced from the first columnar scintillators, and pho...
10/13/2011
20110241144Nuclear Batteries
We introduce a new technology for Manufactureable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh envir...
10/06/2011
20110204872PN JUNCTION CHEMICAL SENSOR (originally published as A SENSOR DEVICE AND METHOD OF DETECTING PARTICLES)
A sensor device (100, 2800) for detecting particles, the sensor device (100, 2800) comprising a substrate (102), a first doped region (104) formed in the substrate (102) by a first dopant of a first type of conductivity, a second doped...
08/25/2011
20110193186RADIATION DETECTOR MODULE
A radiation detector module includes a radiation detecting substrate including a plurality of semiconductor devices mounted thereon for detecting radiation, a shielding material at a position nearer to an incident side of the radiation than the radiation detecting subst...
08/11/2011
20110180890RADIOGRAPHIC IMAGE DETECTOR, METHOD OF PRODUCING THE SAME, AND PROTECTIVE MEMBER
A method of producing a radiographic image detector includes: preparing a thin-film transistor substrate comprising an insulating substrate and a thin-film transistor that is disposed on a surface of the insulating substrate at a first side; attaching, to the thin-film ...
07/28/2011
20110169116Radiation Detector
The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to th...
07/14/2011
20110163242LAYERED SEMICONDUCTOR NEUTRON DETECTORS
Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B...
07/07/2011
20110127527Neutron Detector with Gamma Ray Isolation
A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector s...
06/02/2011
20110095386Semiconductor sensor for detecting a light radiation
A semiconductor sensor for detecting a radiation including a sensitive layer obtained in an inactive layer adapted to detect a light radiation, a portion thereof having a metal layer attached thereto, while on the remaining portion of the sensitive layer there is an ove...
04/28/2011
20110095194NEUTRON DETECTOR WITH NEUTRON CONVERTER, METHOD FOR MANUFACTURING THE NEUTRON DETECTOR AND NEUTRON IMAGING APPARATUS
A detector for detecting neutrons includes a neutron reactive material interacting with neutrons to be detected and releasing ionizing radiation reaction products in relation to the interactions. It also includes a first semiconductor element being coupled with the neut...
04/28/2011
20110079791BETAVOLTAIC CELL
High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel ...
04/07/2011
20110079865RADIATION DETECTION AND A METHOD OF MANUFACTURING A RADIATION DETECTOR
The invention relates to a radiation detector (10), comprising an array of pixels (1), wherein each pixel (1) comprises a conversion layer of a semiconductor material (4) for converting incident radiation into electrical signals and wherein e...
04/07/2011
20110031572HIGH POWER DENSITY BETAVOLTAIC BATTERY
To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one e...
02/10/2011
20110012216Simplified Silicon Drift Detector and Wraparound Neutron Detector
A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and/or irr...
01/20/2011
20100327170SPECTROSCOPIC FAST NEUTRON DETECTION AND DISCRIMINATING USING LI-BASED SEMICONDUCTORS
A neutron sensing material detector includes an anode; a cathode; and a semiconductor material disposed between the anode and the cathode. An electric field is applied between the anode and cathode. The semiconductor material is composed of a ternary composition of stoi...
12/30/2010
20100304204ENERGY CONVERSION AND ENERGY STORAGE DEVICES AND METHODS FOR MAKING SAME
Energy devices such as energy conversion devices and energy storage devices and methods for the manufacture of such devices. The devices include a support member having an array of pore channels having a small average pore channel diameter and having a pore channel leng...
12/02/2010
20100276603RADON DETECTOR AND CONTINUOUS DETECTION DEVICE INCLUDING SUCH DETECTOR
The object of the invention is a detector (20) of radon and its daughter products that are present in the ambient air, including in particular aerosols, characterized in that it comprises:

A silicon pellet that integrates a PN juncti...

11/04/2010
20100264502METHODS AND SYSTEMS OF CURVED RADIATION DETECTOR FABRICATION
Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the back...
10/21/2010
20100219494Sub-mm Wireless Ionizing Radiation Detector
One embodiment of a radiation sensing capacitor is presented. The radiation sensing capacitor may include a silicon layer and an insulator layer coupled to the silicon layer. The radiation sensing capacitor may also include a silicon-insulator interface region coupling ...
09/02/2010
20100164534Radiation Sensor and Dosimeter
A semiconductor radiation sensor (100), comprising a substrate (102), a carrier material (104) mounted to the substrate (102), and a semiconductor detector (106) mounted to the carrier material (104). A radiation sensitive porti...
07/01/2010
20100129925SEMICONDUCTOR NANOWIRES CHARGE SENSOR
A semiconductor nanowire is coated with a chemical coating layer that comprises a functional material which modulates the quantity of free charge carriers within the semiconductor nanowire. The outer surface of the chemical coating layer includes a chemical group that f...
05/27/2010
20100102408ELECTRON TUBE
An electron tube of the present invention includes: a vacuum vessel including a face plate portion made of synthetic silica and having a surface on which a photoelectric surface is provided, a stem portion arranged facing the photoelectric surface and made of synthetic ...
04/29/2010
20090309648SINGLE PHOTON DETECTION WITH SELF-QUENCHING MULTIPLICATION
A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletio...
12/17/2009
20090302231NON-STREAMING HIGH-EFFICIENCY PERFORATED SEMICONDUCTOR NEUTRON DETECTORS, METHODS OF MAKING SAME AND MEASURING WAND AND DETECTOR MODULES UTILZING SAME
Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced lea...
12/10/2009
20090298193ATOMIC EMISSION SPECTROSCOPY ON A CHIP
A method of inducing explosive atomization of materials is provided using a metal-oxide-semiconductor (MOS)-based structure under electrical excitation. Explosive atomization of the gate electrode and surrounding dielectric materials creates a microplasma that is substa...
12/03/2009
20090218647Semiconductor Radiation Detector With Thin Film Platinum Alloyed Electrode
A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and t...
09/03/2009
20090206428Direct Electron Detector
An electron detector (30) for detection of electrons comprises a semiconductor wafer (11) having a central portion (12) with a thickness of at most 150 μm, preferably at most 100 μm, formed by etching an area of a thicker wafer. On opposite sides ...
08/20/2009
20080290433Monolithic nuclear event detector and method of manufacture
A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon O...
11/27/2008
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