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Class 257/411 - Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the gate insulator is made of a composite
No. of applications: 382
Last issue date: 05/03/2012


1                    
Application No.Application TitleIssue Date
20120104515TRANSISTORS AND SEMICONDUCTOR DEVICES WITH OXYGEN-DIFFUSION BARRIER LAYERS
Embodiments of transistors comprise a gate stack overlying a semiconductor material. The gate stack comprises a deposited oxide layer overlying the semiconductor material, an oxygen-diffusion barrier layer overlying the deposited oxide layer, a high-k dielectric layer o... 		05/03/2012
20120104509SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electr... 		05/03/2012
20120104514Semiconductor Devices and Methods of Manufacturing the Same
Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate... 		05/03/2012
20120038009Novel methods to reduce gate contact resistance for AC reff reduction
A method (and semiconductor device) of fabricating a semiconductor device provides a field effect transistor (FET) with reduced gate contact resistance (and series resistance) for improved device performance. An impurity is implanted or deposited in the gate stack in an... 		02/16/2012
20120032281SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR DEVICE
A semiconductor device production method includes: forming an insulating film on a semiconductor substrate, forming a concave portion in the insulating film, forming a gate insulating film at bottom of the concave portion, the bottom being on the semiconductor substrate... 		02/09/2012
20120032280MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROGEN CONCENTRATION AT ITS SIDEWALLS
A method of forming an integrated circuit (IC) having at least one MOS device includes forming a SiON gate dielectric layer on a silicon surface. A gate electrode layer is deposited on the SiON gate layer and then patterning forms a gate stack. Exposed gate dielectric s... 		02/09/2012
20120025329Spacer Shape Engineering for Void-Free Gap-Filling Process
A method of forming a semiconductor device includes providing a semiconductor substrate; forming a gate stack on the semiconductor substrate; forming a gate spacer adjacent to a sidewall of the gate stack; thinning the gate spacer; and forming a secondary gate spacer on... 		02/02/2012
20120025327SEMICONDUCTOR DEVICE WITH METAL GATES AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and... 		02/02/2012
20120025328MOSFET STRUCTURE AND METHOD FOR FABRICATING THE SAME
There are provided a MOSFET structure and a method for fabricating the same. The MOSFET structure comprises: a semiconductor substrate; a gate stack formed on the semiconductor substrate, including a high-k gate dielectric layer and a gate conductor layer formed sequent... 		02/02/2012
20120018817METHOD FOR FABRICATING A GATE STRUCTURE
An method of fabricating the gate structure comprises: sequentially depositing and patterning a dummy oxide layer and a dummy gate electrode layer on a substrate; surrounding the dummy oxide layer and the dummy gate electrode layer with a nitrogen-containing dielectric ... 		01/26/2012
20120012946SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A device isolation region is made of a silicon oxide film embedded in a trench, an upper portion thereof is protruded from a semiconductor substrate, and a sidewall insulating film made of silicon nitride or silicon oxynitride is formed on a sidewall of a portion of the... 		01/19/2012
20110309456SEMICONDUCTOR DEVICE
An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogen... 		12/22/2011
20110298039NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL
A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a... 		12/08/2011
20110291205HIGH-K GATE DIELECTRIC AND METHOD OF MANUFACTURE
A device and method of formation are provided for a high-k gate dielectric and gate electrode. The high-k dielectric material is formed, and a silicon-rich film is formed over the high-k dielectric material. The silicon-rich film is then treated through either oxidation... 		12/01/2011
20110284973SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
One object is to provide a semiconductor element in which leakage current between a gate electrode and a channel formation region is suppressed even when the gate electrode is miniaturized as a result of miniaturization of the semiconductor element. Another object is to... 		11/24/2011
20110284970Transistor Device and Methods of Manufacture Thereof
Methods of forming transistor devices and structures thereof are disclosed. A first dielectric material is formed over a workpiece, and a second dielectric material is formed over the first dielectric material. The workpiece is annealed, causing a portion of the second ... 		11/24/2011
20110272766High-K Metal Gate Device
A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer forme... 		11/10/2011
20110248360HIGH-SPEED TRANSISTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
The present invention relates to a high-speed transistor device and a method for fabricating the same. A high-speed transistor device is proposed, comprising: a silicon substrate; and a gate stack formed on the silicon substrate. The gate stack comprises a gate dielectr... 		10/13/2011
20110248345SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for easily manufacturing a semiconductor device in which variation in thickness or disconnection of a source electrode or a drain electrode is prevented is proposed. A semiconductor device includes a semiconductor layer formed over an insulating substrate; a fi... 		10/13/2011
20110248361SEMICONDUCTOR DEVICE WITH EXTENSION STRUCTURE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extens... 		10/13/2011
20110241131SEMICONDUCTOR MEMORY DEVICE WITH BIT LINE OF SMALL RESISTANCE AND MANUFACTURING METHOD THEREOF
A reduction of a resistance of a bit line of a memory cell array and a reduction of a forming area of the memory cell array are planed. Respective bit lines running at right angles to a word line are composed of a diffusion bit line formed in a semiconductor substrate a... 		10/06/2011
20110233689SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE
There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group co... 		09/29/2011
20110227139NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF INSULATING FILM
An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a tech... 		09/22/2011
20110227171HIGH-K DIELECTRIC AND METAL GATE STACK WITH MINIMAL OVERLAP WITH ISOLATION REGION
A high-k dielectric and metal gate stack with minimal overlap with an adjacent oxide isolation region and related methods are disclosed. One embodiment of the gate stack includes a high dielectric constant (high-k) dielectric layer, a tuning layer and a metal layer posi... 		09/22/2011
20110221012HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE DIELECTRIC/SILICON SUBSTRATE INTERFACE AND METHODS OF MANUFACTURE THEREOF
Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure compris... 		09/15/2011
20110210405METAL NITRIDE FILM, SEMICONDUCTOR DEVICE USING THE METAL NITRIDE FILM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufactu... 		09/01/2011
20110204454SEMICONDUCTOR DEVICE INCLUDING SION GATE DIELECTRIC WITH PORTIONS HAVING DIFFERENT NITROGEN CONCENTRATIONS
An integrated circuit (IC) includes a substrate having a top semiconductor surface including at least one MOS device including a source and a drain region spaced apart to define a channel region. A SiON gate dielectric layer that has a plurality of different N concentra... 		08/25/2011
20110198708TRANSISTORS HAVING ARGON GATE IMPLANTS AND METHODS OF FORMING THE SAME
Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a dielectric constant higher than a dielectric constant of silicon dioxide, and ... 		08/18/2011
20110198709Semiconductor device and method of manufacturing the same
A semiconductor device includes a gate stack structure. The gate stack structure includes an interfacial layer formed on a semiconductor substrate, a high-k dielectric formed on the interfacial layer, a silicide gate including a diffusive material and an impurity metal,... 		08/18/2011
20110193180METHOD AND APPARATUS OF FORMING A GATE
The present disclosure provides an apparatus that includes a semiconductor device. The semiconductor device includes a substrate. The semiconductor device also includes a first gate dielectric layer that is disposed over the substrate. The first gate dielectric layer in... 		08/11/2011
20110193181SEMICONDUCTOR DEVICE HAVING DIFFERENT METAL GATE STRUCTURES
A semiconductor includes a channel region in a semiconductor substrate, a gate dielectric film on the channel region, and a gate on the gate dielectric film. The gate includes a doped metal nitride film, formed from a nitride of a first metal and doped with a second met... 		08/11/2011
20110175176HIGH-K TRANSISTORS WITH LOW THRESHOLD VOLTAGE
A method for forming a semiconductor structure is disclosed. The method includes forming a high-k dielectric layer over a semiconductor substrate and forming a gate layer over the high-k dielectric layer. The method also includes heating the gate layer to 350° C., wher... 		07/21/2011
20110169105SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method of manufacturing a semiconductor device includes forming a polysilicon pattern, source/drain, and side-wall spacer, epitaxially growing silicide films on the source/drain, epitaxially growing silicon films selectively on the silicide film, removing the polysili... 		07/14/2011
20110163386Semiconductor Devices Including Dehydrogenated Interlayer Dielectric Layers
Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first inte... 		07/07/2011
20110156174GATE ELECTRODE HAVING A CAPPING LAYER
A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed.... 		06/30/2011
20110147710DUAL LAYER GATE DIELECTRICS FOR NON-SILICON SEMICONDUCTOR DEVICES
Non-silicon metal-insulator-semiconductor (MIS) devices and methods of forming the same. The non-silicon MIS device includes a gate dielectric stack which comprises at least two layers of non-native oxide or nitride material. The first material layer of the gate dielect... 		06/23/2011
20110147857SEMICONDUCTOR DEVICE
A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate e... 		06/23/2011
20110140205SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still u... 		06/16/2011
20110140206SEMICONDUCTOR DEVICE
A semiconductor device including a substrate, a gate structure, a spacer and source/drain regions is provided. The gate structure is on the substrate, wherein the gate structure includes, from bottom to top, a high-k layer, a work function metal layer, a wetting layer a... 		06/16/2011
20110121378ZrXHfYSn1-X-YO2 FILMS AS HIGH K GATE DIELECTRICS
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of Zrx Hfy Sn1-... 		05/26/2011
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