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| Application No. | Application Title | Issue Date |
| 20120104513 | FIELD EFFECT TRANSISTOR HAVING AN ASYMMETRIC GATE ELECTRODE The gate electrode of a metal oxide semiconductor field effect transistor (MOSFET) comprises a source side gate electrode and a drain side gate electrode that abut each other near the middle of the channel. In one embodiment, the source side gate electrode comprises a s... | 05/03/2012 |
| 20120080760 | Dielectric structure, transistor and manufacturing method thereof The present invention discloses a dielectric structure, a transistor and a manufacturing method thereof with praseodymium oxide. The transistor with praseodymium oxide comprises at least a III-V substrate, a gate dielectric layer and a gate. The gate dielectric layer is... | 04/05/2012 |
| 20120080756 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME A semiconductor device includes a high dielectric gate insulating film formed on a substrate, and a metal gate electrode formed on the high dielectric gate insulating film. The metal gate electrode includes a crystalline portion and an amorphous portion. A halogen eleme... | 04/05/2012 |
| 20120068275 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME A method for fabricating a semiconductor device includes forming a high-dielectric constant insulating film including a high-dielectric constant film; forming a first conductive film including an oxide film on an upper surface thereof and containing at least one of high... | 03/22/2012 |
| 20120049171 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Disclosed herein is an electronic device, including: (A) a control electrode; (B) a first electrode and a second electrode; and (C) an active layer composed of an organic semiconductor material layer provided between the first electrode and the second electrode so as to... | 03/01/2012 |
| 20120049297 | SEMICONDUCTOR DEVICE A gate insulating film includes an oxygen-containing insulating film and a high dielectric constant insulating film formed on the oxygen-containing insulating film and containing a first metal. The high dielectric constant insulating film further includes a second metal... | 03/01/2012 |
| 20120049296 | Oxide Deposition by Using a Double Liner Approach for Reducing Pattern Density Dependence in Sophisticated Semiconductor Devices A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern densi... | 03/01/2012 |
| 20120043623 | METHOD AND STRUCTURE FOR FORMING HIGH-K/METAL GATE EXTREMELY THIN SEMICONDUCTOR ON INSULATOR DEVICE A semiconductor device is provided that includes a gate structure present on a substrate. The gate structure includes a gate conductor with an undercut region in sidewalls of a first portion of the gate conductor, wherein a second portion of the gate conductor is presen... | 02/23/2012 |
| 20120043624 | ULTRA-THIN BODY TRANSISTOR AND METHOD FOR MANUFCTURING THE SAME An ultra-thin body transistor and a method for manufacturing an ultra-thin body transistor are disclosed. The ultra-thin body transistor comprises: a semiconductor substrate; a gate structure on the semiconductor substrate; and a source region and a drain region in the ... | 02/23/2012 |
| 20120043622 | PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k dielectric metal gate structure includes applying a current to a gate conta... | 02/23/2012 |
| 20120043625 | Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substra... | 02/23/2012 |
| 20120032279 | III-V METAL-OXIDE-SEMICONDUCTOR DEVICE A barrier layer, hafnium oxide layer, between a III-V semiconductor layer and an lanthanum oxide layer is used to prevent interaction between the III-V semiconductor layer and the lanthanum oxide layer. Meanwhile, the high dielectric constant of the lanthanum oxide can ... | 02/09/2012 |
| 20120025326 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF An interface oxide layer, a gate insulating film, and a gate electrode are sequentially provided on the upper surface of a semiconductor substrate. The gate insulating film has a first high-k film and a second high-k film. The first high-k film is provided on the interf... | 02/02/2012 |
| 20120018812 | METHOD AND STRUCTURE FOR BALANCING POWER AND PERFORMANCE USING FLUORINE AND NITROGEN DOPED SUBSTRATES Methods and systems evaluate an integrated circuit design for power consumption balance and performance balance, using a computerized device. Based on this process of evaluating the integrated circuit, the methods and systems can identify first sets of integrated circui... | 01/26/2012 |
| 20120018816 | SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS A semiconductor device is formed with low resistivity self aligned silicide contacts with high-K/metal gates. Embodiments include postponing silicidation of a metal layer on source/drain regions in a silicon substrate until deposition of a high-K dielectric, thereby pre... | 01/26/2012 |
| 20110316095 | Semiconductor device and manufacturing method thereof A semiconductor device includes a silicon substrate, an SiO film, and a High-K film. The SiO film is first formed on the silicon substrate and then subjected to a nitridation process to obtain an SiON film from the SiO film. The nitridation process is performed such tha... | 12/29/2011 |
| 20110309455 | Gate-Last Fabrication of Quarter-Gap MGHK FET A quarter-gap p-type field effect transistor (PFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a gate metal layer located over the high-k ... | 12/22/2011 |
| 20110309449 | INTERFACE-FREE METAL GATE STACK A method of fabricating a gate stack for a transistor includes forming a high dielectric constant layer on a semiconductor layer. A metal layer is formed on the high dielectric constant layer. A silicon containing layer is formed over the metal layer. An oxidized layer ... | 12/22/2011 |
| 20110298060 | INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K METAL GATE STACK A gate stack structure for field effect transistor (FET) devices includes a nitrogen rich first dielectric layer formed over a semiconductor substrate surface; a nitrogen deficient, oxygen rich second dielectric layer formed on the nitrogen rich first dielectric layer, ... | 12/08/2011 |
| 20110298062 | METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop t... | 12/08/2011 |
| 20110298061 | STRUCTURE AND METHOD FOR REPLACEMENT GATE MOSFET WITH SELF-ALIGNED CONTACT USING SACRIFICIAL MANDREL DIELECTRIC The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replac... | 12/08/2011 |
| 20110291204 | SEMICONDUCTOR DEVICE HAVING STI WITH NITRIDE LINER AND UV LIGHT SHIELDING FILM A semiconductor device has: a silicon substrate; trench formed downward from the surface of the silicon substrate, the trench defining active regions on the surface of the silicon substrate; a first liner layer of a silicon nitride film covering an inner wall of the tre... | 12/01/2011 |
| 20110284968 | SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE AND METHOD OF FABRICATING THE SAME A semiconductor device includes a semiconductor substrate having a top surface and a recessed portion including at least two oblique side surfaces and a first bottom surface therebetween, a gate insulating layer formed on the recessed portion, a gate electrode formed on... | 11/24/2011 |
| 20110272765 | MOSFET GATE AND SOURCE/DRAIN CONTACT METALLIZATION A MOSFET is described incorporating a common metal process to make contact to the source, drain and the metal gate respectively which may be formed concurrently with the same metal or metals.... | 11/10/2011 |
| 20110266637 | Precise Resistor on a Semiconductor Device A method includes forming a polysilicon layer on a substrate; and patterning the polysilicon layer to form a polysilicon resistor and a polysilicon gate. A first ion implantation is performed on the polysilicon resistor to adjust electric resistance of the polysilicon r... | 11/03/2011 |
| 20110260263 | SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER A method of manufacturing a semiconductor device is provided herein, where the width effect is reduced in the resulting semiconductor device. The method involves providing a substrate having semiconductor material, forming an isolation trench in the semiconductor materi... | 10/27/2011 |
| 20110254106 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD A semiconductor device includes a gate insulation film formed over a semiconductor substrate; a cap film formed over the gate insulation film; a silicon oxide film formed over the cap film; a metal gate electrode formed over the silicon oxide film; and source/drain diff... | 10/20/2011 |
| 20110248350 | METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS INCLUDING A HIGH DIELECTRIC CONSTANT GATE INSULATOR AND METAL GATE (HKMG) Adjustment of a switching threshold of a field effect transistor including a gate structure including a Hi-K gate dielectric and a metal gate is achieved and switching thresholds coordinated between NFETs and PFETs by providing fixed charge materials in a thin interfaci... | 10/13/2011 |
| 20110248346 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insul... | 10/13/2011 |
| 20110248359 | SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF A semiconductor device includes a semiconductor substrate, a gate dielectric layer formed on the semiconductor substrate, and at least a first conductive-type metal gate formed on the gate dielectric layer. The first conductive-type metal gate includes a filling metal l... | 10/13/2011 |
| 20110241130 | SEMICONDUCTOR DEVICE HAVING A BLOCKING STRUCTURE AND METHOD OF MANUFACTURING THE SAME A semiconductor device includes a blocking structure between a metal layer and at least one underlying layer. The blocking structure has a first layer configured for preventing diffusion of metal from the metal layer into the at least one underlying layer, and a second ... | 10/06/2011 |
| 20110233683 | CHEMICAL MECHANICAL POLISHING (CMP) METHOD FOR GATE LAST PROCESS A method for fabricating a semiconductor device is provided which includes providing a semiconductor substrate, forming a plurality of transistors, each transistor having a dummy gate structure, forming a contact etch stop layer (CESL) over the substrate including the d... | 09/29/2011 |
| 20110227170 | MOSFET STRUCTURE AND METHOD OF FABRICATING THE SAME There is provided a MOSFET structure and a method of fabricating the same. The method comprises: providing a semiconductor substrate; forming a dummy s gate on the semiconductor substrate; forming source/drain regions; selectively etching the dummy gate to a position wh... | 09/22/2011 |
| 20110221009 | METHOD AND APPARATUS FOR REDUCING GATE RESISTANCE An apparatus has a semiconductor device that includes: a semiconductor substrate having a channel region, a high-k dielectric layer disposed at least partly over the channel region, a gate electrode disposed over the dielectric layer and disposed at least partly over th... | 09/15/2011 |
| 20110215425 | TUNNELING FIELD-EFFECT TRANSISTOR WITH DIRECT TUNNELING FOR ENHANCED TUNNELING CURRENT Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons and holes). The increased probability allows a higher achievable on curre... | 09/08/2011 |
| 20110186912 | TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material... | 08/04/2011 |
| 20110186934 | Low mismatch semiconductor device and method for fabricating same Disclosed is a low mismatch semiconductor device that comprises a lightly doped channel region having a first conductivity type and a first dopant concentration in a semiconductor body, and a high-k metal gate stack including a gate metal layer formed over a high-k gate... | 08/04/2011 |
| 20110169104 | METHODS AND APPARATUS OF FLUORINE PASSIVATION The present disclosure provides methods and apparatus of fluorine passivation in IC device fabrication. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate and passivating a surface of the substrate with a mixture of hydroflu... | 07/14/2011 |
| 20110121409 | Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substra... | 05/26/2011 |
| 20110115034 | TRANSISTOR A transistor including a substrate, a gate, a semiconductor layer, a stacked insulating layer and a source and a drain is provided. The gate is disposed on the substrate. The semiconductor layer is disposed on the substrate, and a first type carrier is the main carrier ... | 05/19/2011 |
