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| Application No. | Application Title | Issue Date |
| 20120104344 | SEMICONDUCTOR DEVICE A semiconductor device includes a semiconductor element. The semiconductor element comprises a first insulating film, a resistance changing layer, a first electrode, a buried layer, and a second electrode. The first electrode is formed within the opening so as to cover ... | 05/03/2012 |
| 20120104343 | Nonvolatile Memory Cells and Methods Of Forming Nonvolatile Memory Cell A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive materia... | 05/03/2012 |
| 20120068142 | RESISTANCE RANDOM ACCESS MEMORY ELEMENT AND METHOD FOR MAKING THE SAME A resistance random access memory element includes a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence. The insulating layer includes a plurality of pointed electrodes. A method for making a resistance random ... | 03/22/2012 |
| 20120068136 | Phase Change Memory Device, Storage System Having the Same and Fabricating Method Thereof Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memor... | 03/22/2012 |
| 20120069624 | REACTIVE METAL IMPLATED OXIDE BASED MEMORY Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming an oxide over the first conductive element, implanting... | 03/22/2012 |
| 20120049145 | Non-Volatile Memory Elements And Memory Devices Including The Same A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. ... | 03/01/2012 |
| 20120049144 | Post-Fabrication Self-Aligned Initialization of Integrated Devices Creating a localized region of material having a target chemical composition by defining an electrical circuit on a substrate, and depositing on the electrical circuit one or more layers of materials having one or more chemical compositions. An electrical current pulse ... | 03/01/2012 |
| 20120039116 | PHASE CHANGE MEMORY DEVICE COMPRISING BISMUTH-TELLURIUM NANOWIRES The present invention relates to a phase change memory device comprising bismuth-tellurium nanowires. More specifically, the bismuth-tellurium nanowires having PRAM characteristics may be prepared by using a porous nano template without any high temperature process and ... | 02/16/2012 |
| 20120037877 | ONE-MASK PHASE CHANGE MEMORY PROCESS INTEGRATION An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a first metalization layer (Metal 1... | 02/16/2012 |
| 20120032131 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer se... | 02/09/2012 |
| 20120025162 | PHASE CHANGE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME A method for fabricating a PCRAM includes forming a switching element on a semiconductor substrate, forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semico... | 02/02/2012 |
| 20120018694 | REPRODUCIBLE RESISTANCE VARIABLE INSULATING MEMORY DEVICES AND METHODS FOR FORMING SAME The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest electric ... | 01/26/2012 |
| 20120012805 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a nonvolatile memory device includes a first interconnect, a nanomaterial aggregate layer, and a second interconnect. The nanomaterial aggregate layer is provided on the first interconnect. The nanomaterial aggregate layer includes an aggreg... | 01/19/2012 |
| 20120008370 | MEMORY ELEMENT AND MEMORY DEVICE A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change ... | 01/12/2012 |
| 20110278530 | MEMORY DEVICE INCORPORATING A RESISTANCE VARIABLE CHALCOGENIDE ELEMENT A memory device comprising a first electrode, a second electrode, metal-chalcogenide material between the first and second electrodes and chalcogenide glass between the first and second electrodes. The chalcogenide glass comprises a material with the chemical formula A<... | 11/17/2011 |
| 20110266511 | Phase Change Memory Device with Air Gap A semiconductor device is provided which includes a bottom electrode contact formed on a substrate, and a dielectric layer formed on the bottom electrode contact. The device further includes a heating element formed in the dielectric layer, wherein the heating element i... | 11/03/2011 |
| 20110260133 | SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF A switching element includes: a first electrode supplying metal ions; a second electrode less ionizable than the first electrode; and an ion conducting layer arranged between the first electrode and the second electrode and containing a metal oxide that can conduct the ... | 10/27/2011 |
| 20110240946 | Graphene Memristor Having Modulated Graphene Interlayer Conduction A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions th... | 10/06/2011 |
| 20110240947 | Defective Graphene-Based Memristor A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage... | 10/06/2011 |
| 20110233505 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF According to the nonvolatile memory device in one embodiment, contact plugs connect between second wires and third wires in a memory layer and a first wire connected to a control element. Drawn wire portions connect the second wires and the third wires with the contact ... | 09/29/2011 |
| 20110227022 | Memristor Having a Nanostructure Forming An Active Region A memristor having an active region having a first electrode, a second electrode, and a nanostructure connecting the first electrode with the second electrode. The nanostructure includes a generally insulating material configured to have an electrically conductive chann... | 09/22/2011 |
| 20110210306 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME A method of forming a reversible resistance-switching metal-carbon-metal (“MCM”) device is provided, the device including a first conducting layer, a second conducting layer, and a reversible resistance-switching element disposed between the first and second conduct... | 09/01/2011 |
| 20110210307 | CHEMICAL MECHANICAL POLISHING STOP LAYER FOR FULLY AMORPHOUS PHASE CHANGE MEMORY PORE CELL A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a dielectric layer on the bottom electrode, and forming a sacrificial layer on the dielectric layer. The method further includes selectively etching portions of th... | 09/01/2011 |
| 20110198555 | CHALCOGENIDE FILM AND MANUFACTURING METHOD THEREOF A chalcogenide film of the present invention is deposited, by sputtering, in a contact hole formed in an insulating layer on a substrate. The chalcogenide film comprises an underlayer film formed at least on a bottom portion of the contact hole and a crystal layer made ... | 08/18/2011 |
| 20110193048 | NON-VOLATILE MEMORY DEVICE HAVING BOTTOM ELECTRODE Provided is a non-volatile memory device including a bottom electrode disposed on a substrate and having a lower part and an upper part. A conductive spacer is disposed on a sidewall of the lower part of the bottom electrode. A nitride spacer is disposed on a top surfac... | 08/11/2011 |
| 20110186799 | NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOF A non-volatile memory cell includes a first electrode, a steering element, a storage element located in series with the steering element, a plurality of discrete conductive nano-features separated from each other by an insulating matrix, where the plurality of discrete ... | 08/04/2011 |
| 20110186800 | PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pilla... | 08/04/2011 |
| 20110175049 | MEMORY COMPONENT AND MEMORY DEVICE A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electro... | 07/21/2011 |
| 20110168966 | DEPOSITION OF AMORPHOUS PHASE CHANGE MATERIAL A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous phase change material is grown on an electrode located at the bottom of the ... | 07/14/2011 |
| 20110163288 | Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory A method for manufacturing a memory cell device includes forming a bottom electrode comprising a pipe-shaped member, a top, a bottom and sidewalls having thickness in a dimension orthogonal to the axis of the pipe-shaped member, and having a ring-shaped top surface. A d... | 07/07/2011 |
| 20110155989 | VARIABLE RESISTANCE MEMORY DEVICE AND METHODS OF FORMING THE SAME A semiconductor memory device includes a first electrode and a second electrode, a variable resistance material pattern including a first element disposed between the first and second electrode, and a first spacer including the first element, the first spacer disposed a... | 06/30/2011 |
| 20110155990 | Continuous plane of thin-film materials for a two-terminal cross-point memory A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors a... | 06/30/2011 |
| 20110147694 | RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME A resistive memory device includes a plurality of resistive units, each resistive unit including: a lower electrode formed over a substrate; a resistive layer formed over the lower electrode; and an upper electrode formed over the resistive layer, wherein edge parts of ... | 06/23/2011 |
| 20110133149 | RESISTANCE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit which is provided between the fir... | 06/09/2011 |
| 20110133150 | Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory elemen... | 06/09/2011 |
| 20110127485 | KEYHOLE-FREE SLOPED HEATER FOR PHASE CHANGE MEMORY Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.... | 06/02/2011 |
| 20110108792 | Single Crystal Phase Change Material A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the dielectric layer such that the via hole extends down to the electrode; and growing ... | 05/12/2011 |
| 20110095257 | MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capabi... | 04/28/2011 |
| 20110095258 | MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capabi... | 04/28/2011 |
| 20110079764 | INFORMATION RECORDING MEDIUM, MANUFACTURING METHOD THEREFOR, AND SPUTTERING TARGET The information recording medium of the present invention includes a recording layer whose phase can be changed by application of electrical energy. The recording layer contains, as a main component, a material consisting of Ge, Te, and Sb. The material has a compositio... | 04/07/2011 |
