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| Application No. | Application Title | Issue Date |
| 20120049254 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element se... | 03/01/2012 |
| 20120018617 | Semiconductor device, solid-state imaging device, method for manufacturing semiconductor device, method for manufacturing solid-state imaging device, and electronic apparatus Disclosed herein is a semiconductor device including an element isolation region configured to be formed on a semiconductor substrate, wherein the element isolation region is formed of a multistep trench in which trenches having different diameters are stacked and diame... | 01/26/2012 |
| 20120018619 | Method of Resetting a Photosite, and Corresponding Photosite A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.... | 01/26/2012 |
| 20120002070 | SOLID-STATE IMAGE SENSOR AND CAMERA A solid-state image sensor having a pixel array area where a plurality of pixels are arranged, and a peripheral circuit area, each pixel including a photoelectric converter, and a transfer gate electrode which forms a channel for transferring charges generated by the ph... | 01/05/2012 |
| 20110310381 | PHOTOSENSOR, SEMICONDUCTOR DEVICE INCLUDING PHOTOSENSOR, AND LIGHT MEASUREMENT METHOD USING PHOTOSENSOR An object is to provide a photosensor utilizing an oxide semiconductor in which a refreshing operation is unnecessary, a semiconductor device provided with the photosensor, and a light measurement method utilizing the photosensor. It is found that a constant gate curren... | 12/22/2011 |
| 20110298022 | MANUFACTURING METHOD FOR SOLID-STATE IMAGE PICKUP DEVICE, SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUS A solid-state image pickup device and method for manufacturing the same. The solid-state image pickup device includes a substrate, a first charge accumulation region formed within the substrate, a first impurity region formed within the substrate and located above the c... | 12/08/2011 |
| 20110298023 | SOLID-STATE IMAGING DEVICE According to the embodiments, a solid-state imaging device is provided, which includes a first electrode film, a first photoelectric conversion film, a first conductive film, a dielectric film, a second photoelectric conversion film, and a second conductive film. The fi... | 12/08/2011 |
| 20110292380 | CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast A CMOS detector with pairs of interdigitated elongated finger-like collection gates includes p+ implanted regions that create charge barrier regions that can intentionally be overcome. These regions steer charge to a desired collection gate pair for collection. The p+ i... | 12/01/2011 |
| 20110291165 | DETECTOR MODULE A detector module, in particular for super-resolution satellites, contains a multi-chip carrier. At least one TDI-CCD detector and at least one CMOS chip are arranged on the multi-chip carrier, and are electrically connected to one another. The CMOS chip contains at lea... | 12/01/2011 |
| 20110278652 | SOLID STATE IMAGING DEVICE A plurality of pixels PX include effective pixels and optical black pixels. Signal lines VL are provided corresponding to each column of the pixels PX and supplied with output signals of the pixels PX of the corresponding column. Clip transistors CL are provided corresp... | 11/17/2011 |
| 20110272750 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS A photoelectric conversion apparatus includes a photoelectric conversion unit with a semiconductor region of a first conduction type, an amplifying transistor, and a contact. The contact supplies, via a semiconductor region of a second conduction type arranged along a s... | 11/10/2011 |
| 20110260222 | Image Sensor having Reduced Dark Current An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of t... | 10/27/2011 |
| 20110260221 | LASER ANNEAL FOR IMAGE SENSORS A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflect... | 10/27/2011 |
| 20110241089 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS Disclosed herein is a solid-state imaging device including: a semiconductor region of a second conductivity type which is formed on a face side of a semiconductor substrate; a photoelectric conversion element which has an impurity region of a first conductivity type and... | 10/06/2011 |
| 20110242384 | Image sensor using light-sensitive device and method of operating the image sensor Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of ... | 10/06/2011 |
| 20110234873 | SOLID-STATE IMAGE PICKUP ELEMENT AND IMAGE PICKUP APPARATUS Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well regi... | 09/29/2011 |
| 20110233620 | PHOTOELECTRIC CONVERSION APPARATUS, IMAGE PICKUP SYSTEM, AND MANUFACTURING METHOD THEREFOR A photoelectric conversion apparatus includes a semiconductor substrate on which a photoelectric conversion element and a transistor are arranged and a plurality of wiring layers including a first wiring layer and a second wiring layer above the first wiring layer, in w... | 09/29/2011 |
| 20110227138 | Photosensitive Imaging Devices And Associated Methods Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor subst... | 09/22/2011 |
| 20110220976 | SOLID-STATE IMAGING DEVICE Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semico... | 09/15/2011 |
| 20110210382 | DIGITAL RADIOGRAPHIC FLAT-PANEL IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME Method of manufacturing imaging arrays can include providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the ... | 09/01/2011 |
| 20110210381 | TRANSISTOR, IMAGE SENSOR WITH THE SAME, AND METHOD OF MANUFACTURING THE SAME Provided is an image sensor including a drive transistor as a voltage buffer, which can suppress generation of secondary electrons from a channel of the drive transistor to prevent generation of image defects caused by dark current. The transistor includes a gate electr... | 09/01/2011 |
| 20110193940 | 3D CMOS Image Sensors, Sensor Systems Including the Same A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system ... | 08/11/2011 |
| 20110193146 | Charge Carrier Barrier for Image Sensor A pixel sensor structure, method of manufacture and method of operating. Disclosed is a buffer pixel cell comprising a barrier region for preventing stray charge carriers from arriving at a dark current correction pixel cell. The buffer pixel cell is located in the vici... | 08/11/2011 |
| 20110180859 | Semiconductor device, method of manufacturing semiconductor device, and solid-state imaging apparatus A semiconductor device includes a gate electrode formed on a substrate with a gate insulating layer in between, an insulating layer of property and thickness that allow for a silicide block formed in a first region of the substrate so as to cover the gate electrode, a s... | 07/28/2011 |
| 20110180860 | Solid-state imaging apparatus, method of manufacturing same, and electronic apparatus A solid-state imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and pixel transistors, which are formed on a semiconductor substrate; a floating diffusion unit in the pixel; a first-conductivity-type ion implantation area fo... | 07/28/2011 |
| 20110175150 | IMAGE PICKUP DEVICE The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectr... | 07/21/2011 |
| 20110175151 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating di... | 07/21/2011 |
| 20110163364 | IMAGE SENSOR, FABRICATING METHOD THEREOF, AND DEVICE COMPRISING THE IMAGE SENSOR Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal di... | 07/07/2011 |
| 20110128430 | Image Sensors Having Multiple Photoelectric Conversion Devices Therein Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electric... | 06/02/2011 |
| 20110127592 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND SOLID-STATE IMAGING APPARATUS A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a semiconductor substrate, forming an isolation region by performing ion implantation of an impurity of a first conducti... | 06/02/2011 |
| 20110115002 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH REINFORCED PAD STRUCTURE A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a ... | 05/19/2011 |
| 20110115003 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoe... | 05/19/2011 |
| 20110079832 | SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME A solid-state image pickup device includes: a semiconductor substrate; and a plurality of pixel circuits formed on the semiconductor substrate; each of the plurality of pixel circuits formed on the semiconductor substrate including a photoelectric conversion element, a ... | 04/07/2011 |
| 20110073923 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation r... | 03/31/2011 |
| 20110018041 | Semiconductor Device and Method of Driving the Same To provide a semiconductor device and a driving method of the same that is capable of enlarging a signal amplitude value as well as increasing a range in which a linear input/output relationship operates while preventing a signal writing-in time from becoming long. The ... | 01/27/2011 |
| 20100320514 | DIGITAL RADIOGRAPHY IMAGER WITH BURIED INTERCONNECT LAYER IN SILICON-ON-GLASS AND METHOD OF FABRICATING SAME A method of forming an imaging array includes providing a single crystal silicon substrate having an internal separation layer, forming a patterned conductive layer proximate a first side of the single crystal silicon substrate, forming an electrically conductive layer ... | 12/23/2010 |
| 20100295066 | SEMICONDUCTOR SUBSTRATE AND METHODS FOR THE PRODUCTION THEREOF The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrange... | 11/25/2010 |
| 20100276736 | CMOS IMAGE SENSOR ON STACKED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND PROCESS FOR MAKING SAME Methods and apparatus for producing a CMOS image sensor result in a plurality of photo sensitive layers, each layer including: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the gl... | 11/04/2010 |
| 20100252870 | DUAL SHALLOW TRENCH ISOLATION AND RELATED APPLICATIONS Embodiments of the invention relate to dual shallow trench isolations (STI). In various embodiments related to CMOS Image Sensor (CIS) technologies, the dual STI refers to one STI structure in the pixel region and another STI structure in the periphery or logic region. ... | 10/07/2010 |
| 20100237393 | SOLID-STATE IMAGE PICK-UP DEVICE AND IMAGING SYSTEM USING THE SAME The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region... | 09/23/2010 |
