Did You Know...
...that while attempting to develop a super strong glue, 3M employee Spencer Silver accidentally developed a glue that was so weak it would barely hold two pieces of paper together? However, his colleague Art Fry needed the glue. Fry sang with his church choir and marked the pages of his hymnal with small scraps of paper that often fell out. He used Silver's glue to hold the papers in place. Today we call this invention Post-it Notes.
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| Application No. | Application Title | Issue Date |
| 20110122108 | Semiconductor device and display device It is an object to perform imaging a high-resolution image in a display device including a photosensor regardless of the intensity of incident light on the photosensor. A display device including a display panel which is provided a photosensor and having a function of i... | 05/26/2011 |
| 20110079824 | ALTERNATE 4-TERMINAL JFET GEOMETRY TO REDUCE GATE TO SOURCE CAPACITANCE A 4-Terminal JFET includes a substrate having a first conduction type and an upper layer having a second, opposite, conduction type over the substrate. A gate and a source are embedded in the upper layer. A gate pad is electrically connected to the gate. A region, which... | 04/07/2011 |
| 20090065801 | Surface plasmon polariton actuated transistors A surface plasmon polaritron activated semiconductor device uses a surface plasmon wire that functions as an optical waveguide for fast communication of a signal and functions as a energy translator using a wire tip for translating the optical signal passing through the... | 03/12/2009 |
| 20080315265 | Semiconductor Radiation Detector Optimized for Detecting Visible Light A semiconductor radiation detector comprises a bulk layer of semiconductor material, and on a first surface of the bulk layer in the following order: a modified internal gate layer of semiconductor of second conductivity type, a barrier layer of semiconductor of first c... | 12/25/2008 |
| 20080230811 | Semiconductor Structure The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type... | 09/25/2008 |
| 20080099797 | Method and device for sensing radiation A device is disclosed for sensing radiation, having a gate region and a substrate, wherein one of the gate region and the substrate is configured as an input for radiation. A channel region, connecting a source region and a drain region of the transistor device is provi... | 05/01/2008 |
| 20070284627 | LIQUID CRYSTAL DISPLAY DEVICE AND SEMICONDUCTOR DEVICE By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode form... | 12/13/2007 |
| 20070215912 | Solid-state imaging device and imaging apparatus A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provi... | 09/20/2007 |
| 20070181916 | Method of manufacturing flash memory device A method of manufacturing a flash memory device, one embodiment of which includes the steps of forming a floating gate pattern in which a tunnel oxide film, a first conductive layer, and a nitride film are laminated on a semiconductor substrate of a first region, and fo... | 08/09/2007 |
| 20070077726 | Semiconductor device and fabrication method therefor The present invention provides a method of fabricating a semiconductor device including forming an insulation film on or above a semiconductor substrate, forming contact holes in the insulation film, forming a metal layer in the contact hole, polishing an upper portion ... | 04/05/2007 |
| 20070045672 | Semiconductor device The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a tra... | 03/01/2007 |
| 20060261381 | Photodetector A photodetector is disclosed, comprising: a substrate; a GaN-related material layer of a first conductivity type located on the substrate; an intrinsic layer located on a portion of the GaN-related material layer of the first conductivity type; a first GaN-related mater... | 11/23/2006 |
| 20060220073 | Solid-state image pickup element and method of producing the same A solid-state image pickup element comprises: a semiconductor substrate; a photoelectric converting portion formed in the semiconductor substrate; a reflective material portion comprising a hole portion wherein the hole portion is located on a surface, on an area in whi... | 10/05/2006 |
| 20060186441 | Light-emitting device, liquid-crystal display device and method for manufacturing same The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of Cu, Au, Ag,... | 08/24/2006 |
| 20060151814 | Optical semiconductor device Since a plurality of light-receiving elements have heretofore led an electrode from a semiconductor substrate through an impurity-diffused and -buried region, series resistance has been relatively high, so that it has been difficult to improve the frequency characterist... | 07/13/2006 |
| 20060102936 | Lead frame for a semiconductor device A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, an... | 05/18/2006 |
| 20060097291 | Illuminating device and method of fabricating the same The illuminating device includes a lens formed of a resin mold and having a portion for receiving an LED which is formed on one surface thereof, the LED received in the receiving portion, and a wiring member deposited on the receiving-portion-forming surface of the lens... | 05/11/2006 |
| 20060091429 | Light emitting diode and lens for the same A light emitting diode includes a lens, a chip base attached to a bottom of the lens, and an LED chip attached in the chip base to be concentric with the lens. The lens includes a bottom, an outer sidewall extending from the bottom, a first outer top surface extending f... | 05/04/2006 |
| 20060071245 | Projection lens for light source arrangement A light source arrangement for substantially enhaning the lighting intensity of the light beams emitted from the light source therefore includes a lens body and an illumination unit. The lens body has an illumination portion defining a light projecting surface and at le... | 04/06/2006 |
| 20060054942 | Light emitting device A light emitting device which has increased light emitting amount without changing its size is provided. The light emitting device is characterized in that a semiconductor layer 30 is formed on an uneven surface 1a of an uneven substrate 1. T... | 03/16/2006 |
| 20060049433 | Semiconductor light-emitting device and method for manufacturing the same A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconduc... | 03/09/2006 |
| 20060043433 | Light-emitting diode A light-emitting diode 10A has a light-emitting element 11a fixed to a leadframe 30 with a conductive adhesive material 20, the light-emitting element 11a having a semiconductor layer 9 including a light-emitting l... | 03/02/2006 |
| 20060027838 | Semiconductor device and flat panel display device having the same A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third elec... | 02/09/2006 |
| 20060006430 | Submount substrate for mounting light emitting device and method of fabricating the same A submount substrate for mounting a light emitting device and a method of fabricating the same, wherein since a submount substrate for mouthing a light emitting device in which a Zener diode device is integrated can be fabricated by means of a silicon bulk micromachinin... | 01/12/2006 |
| 20060001055 | Led and fabrication method of same An LED can include a silicon substrate and a pair of electrodes formed inside a horn that is formed on the silicon substrate by anisotropic etching. The LED can include an LED chip mounted inside the horn, the LED chip being electrically connected to the pair of electro... | 01/05/2006 |
| 20060001056 | LED with substrate modifications for enhanced light extraction and method of making same The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphol... | 01/05/2006 |
| 20050212017 | Vehicle actuated gate apparatus A vehicle-actuated gate system having a gate assembly with a gate member pivotally attached to a main post. A vehicle engages the gate member to pivot the gate member between an open and closed position where it is secured with an engagement member having at least one i... | 09/29/2005 |
| 20050179064 | LED lamp device An LED lamp device includes a light emitting element that emits light in a blue-based or violet-based color, an LED having a fluorescent material that emits fluorescent light in a yellow to yellow-green-based color in response to light received from the light emitting e... | 08/18/2005 |
| 20050121717 | Semiconductor device A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+ gate and a gate electrode is formed on the bottom of the first region, the struc... | 06/09/2005 |
| 20050062079 | [METHODS FOR FORMING PN JUNCTION, ONE-TIME PROGRAMMABLE READ-ONLY MEMORY AND FABRICATING PROCESSES THEREOF] A method for forming a PN junction is described. A stacked structure consisting of an N-doped (or P-doped) layer, a dielectric layer and a nucleation layer is formed, and then an insulating layer is formed having an opening therein. A P-doped (or N-doped) polysilicon or... | 03/24/2005 |
| 20050012122 | Semiconductor device and manufacturing method thereof A threshold voltage change and degradation of the drain saturation current over a period of time of a MOS transistor are prevented by providing a permeable insulating film that serves as an inter-layer etching stopper layer on the surface of a plug, and an inter-layer i... | 01/20/2005 |
