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| Application No. | Application Title | Issue Date |
| 20120068157 | Transistor Having Graphene Base A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheet... | 03/22/2012 |
| 20100212729 | Epitaxial Growth of III-V Compounds on (111) Silicon for Solar Cells A multi-junction device can be used as a high efficiency solar cell, laser, or light-emitting diode. Multiple epitaxial films grown over a substrate have very low defect densities because an initial epitaxial layer is a coincidence-site lattice (CSL) layer that has III-... | 08/26/2010 |
| 20100207101 | INCORPORATING GATE CONTROL OVER A RESONANT TUNNELING STRUCTURE IN CMOS TO REDUCE OFF-STATE CURRENT LEAKAGE, SUPPLY VOLTAGE AND POWER CONSUMPTION A semiconductor device and method for fabricating a semiconductor device incorporating gate control over a resonant tunneling structure. The semiconductor device includes a source terminal, a gate terminal, a drain terminal, and a resonant tunneling structure located be... | 08/19/2010 |
| 20100181551 | Quantum dot transistor One or more quantum dots are used to control current flow in a transistor. Instead of being disposed in a channel between source and drain, the quantum dot (or dots) are vertically separated from the source and drain by an insulating layer. Current can tunnel between th... | 07/22/2010 |
| 20100133513 | NANOPARTICLE / NANOTUBE-BASED NANOELECTRONIC DEVICES AND CHEMICALLY-DIRECTED ASSEMBLY THEREOF According to some embodiments, the present invention provides a nanoelectronic device based on a nanostructure that may include a nanotube with first and second ends, a metallic nanoparticle attached to the first end, and an insulating nanoparticle attached to the secon... | 06/03/2010 |
| 20100123120 | A SINGLE-PHOTON DETECTOR WITH A QUANTUM DOT AND A NANO-INJECTOR A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of ... | 05/20/2010 |
| 20100103727 | ST-RAM EMPLOYING A MAGNETIC RESONANT TUNNELING DIODE AS A SPACER LAYER A memory cell that includes a first magnetic layer, the magnetization of which is free to rotate under the influence of spin torque; a tunneling layer comprising a magnetic resonant tunneling diode (MRTD); and a second magnetic layer, wherein the magnetization of the se... | 04/29/2010 |
| 20100102298 | SCHOTTKY BARRIER QUANTUM WELL RESONANT TUNNELING TRANSISTOR A semiconductor transistor device includes one or more conductive base regions, a first semiconductor barrier region, a second semiconductor barrier region, a conductive emitter region, and a conductive collector region. The first semiconductor barrier region or the sec... | 04/29/2010 |
| 20100093140 | GATED RESONANT TUNNELING DIODE A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which is different from other conventional quantum transistors that require oth... | 04/15/2010 |
| 20100065823 | GATED RESONANT TUNNELING DIODE A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which is different from other conventional quantum transistors that require oth... | 03/18/2010 |
| 20100026399 | Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes A circuit includes a resonant tunneling device having first and second terminals, and biased to exhibit a negative resistance between the terminals, the terminals being coupled at spaced locations to a further section made of a material which has a plasma resonance tune... | 02/04/2010 |
| 20100026400 | RESONANT TUNNELING STRUCTURE A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E2). A second quantum well layer has a first sub-band (E1) and a third sub-ba... | 02/04/2010 |
| 20100025655 | PHOTON TUNNELING LIGHT EMITTING DIODES AND METHODS Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy lay... | 02/04/2010 |
| 20090321715 | HETERO-CRYSTALLINE STRUCTURE AND METHOD OF MAKING SAME A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The na... | 12/31/2009 |
| 20090321719 | NOVEL MATERIAL AND PROCESS FOR INTEGRATED ION CHIP An integrated ion chip for a large scale quantum device of interconnected ion (or other charged particles) traps each holding a small number of particles for a finite period of time, in a preferred embodiment using sapphire as the substrate, having an internal trapping,... | 12/31/2009 |
| 20090315019 | Optical device having a quantum-dot structure Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the sp... | 12/24/2009 |
| 20090250688 | MOLECULAR QUANTUM INTERFERENCE APPARATUS AND APPLICATIONS OF SAME A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second terminal group between which quantum interference affects electrical conduct... | 10/08/2009 |
| 20090250687 | SEMICONDUCTOR DEVICE AND METHOD TO CONTROL THE STATE OF A SEMICONDUCTOR DEVICE AND TO MANUFACTURE THE SAME A semiconductor device includes a conduct structure to which are arranged contacts for a source and a drain, a resonance region including at least two barrier regions, at least one resonator between the barrier regions and a control electrode and which resonance region ... | 10/08/2009 |
| 20090243007 | SPIN-DEPENDENT TUNNELLING CELL AND METHOD OF FORMATION THEREOF A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a comb... | 10/01/2009 |
| 20090146233 | NON-MAGNETIC SEMICONDUCTOR SPIN TRANSISTOR A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semicond... | 06/11/2009 |
| 20090127543 | VERTICAL GATE-DEPLETED SINGLE ELECTRON TRANSISTOR A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated on top of a substrate, wherein at least two of the layers of basic materia... | 05/21/2009 |
| 20090032805 | Microresonator systems and methods of fabricating the same Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system comprises a substrate h... | 02/05/2009 |
| 20090008630 | TUNNELING TRANSISTOR WITH BARRIER The invention suggests a transistor (21) comprising a source (24) and a drain (29) as well as a barrier region (27) located between the source and the drain. The barrier region is separated from the source and the drain by intrinsic or lowly ... | 01/08/2009 |
| 20090008631 | NANOWIRE TUNNELING TRANSISTOR A transistor comprises a nanowire (22, 22′) having a source (24) and a drain (29) separated by an intrinsic or lowly doped region (26, 28). A potential barrier is formed at the interface of the intrinsic or lowly doped region (26, 28... | 01/08/2009 |
| 20080265242 | CMOS IMAGE SENSOR WITH ENHANCED PHOTOSENSITIVITY A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate and s... | 10/30/2008 |
| 20080246023 | Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer i... | 10/09/2008 |
| 20080246022 | Method for Producing Planar Transporting Resonance Heterostructures An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the transport layer.... | 10/09/2008 |
| 20080142787 | Fermionic bell-state analyzer and quantum computer using same The Bell-state analyzer includes a semiconductor device having quantum dots formed therein and adapted to support Fermions in a spin-up and/or spin-down states. Different Zeeman splittings in one or more of the quantum dots allows resonant quantum tunneling only for ant... | 06/19/2008 |
| 20080073641 | QUANTUM TUNNELING DEVICES AND CIRCUITS WITH LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.... | 03/27/2008 |
| 20080023693 | Methods, devices and compositions for depositing and orienting nanostructures Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material d... | 01/31/2008 |
| 20070164271 | Resonant nanostructures and methods of use Resonant nanostructures (RNSs) are provided in one embodiment of the present invention. RNSs may be nano- to micro-scale structures that resonate at specific frequencies through the application of an electromagnetic or acoustic stimulus. Resonant nanostructures provide ... | 07/19/2007 |
| 20070120110 | Thin-Film Transistors Based on Tunneling Structures and Applications A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a ... | 05/31/2007 |
| 20070069196 | Epitaxial wafer for LED and light emitting diode An epitaxial wafer for a light emitting diode has: a light-emitting portion having a n-type cladding layer, a p-type cladding layer and an active layer formed between the n-type cladding layer and the p-type cladding layer, the light-emitting portion being formed on a n... | 03/29/2007 |
| 20070029543 | Semiconductor device To enhance the super-junction effect of a semiconductor device having the super-junction structure and prevent lowering in the breakdown voltage, a semiconductor device described herein has a first-conductivity-type substrate having an element forming region having a ga... | 02/08/2007 |
| 20070029544 | Interconnected high speed electron tunneling devices An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layers sp... | 02/08/2007 |
| 20060284165 | Silicon-based backward diodes for zero-biased square law detection and detector arrays of same A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode current-v... | 12/21/2006 |
| 20060243962 | Quantum dot resonant tunneling device A quantum-dot resonant-tunneling device apparatus is provided. The quantum-dot resonant-tunneling device apparatus includes a pair of top-and-down N-type electron injection layers and a pair of quantum-dot layers sandwiched with at least a period of double-barrier. The ... | 11/02/2006 |
| 20060220000 | Photon source A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and change of state means for changing the state of the carriers within the qu... | 10/05/2006 |
| 20060197076 | Carbon nanotube resonator transistor and method of making same A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped... | 09/07/2006 |
| 20060131608 | Semiconductor device Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconductor ... | 06/22/2006 |
