Class 257/14 - Quantum well

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein at least two heterojunctions are
No. of applications: 423
Last issue date: 05/24/2012

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Application No.	Application Title	Issue Date
20120128017	Electrical Devices Formed using Ternary Semiconducting Compounds An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 a...	05/24/2012
20120128018	Interband Cascade Lasers A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the th...	05/24/2012
20120104358	SEMICONDUCTOR CHIP CARRIERS WITH MONOLITHICALLY INTEGRATED QUANTUM DOT DEVICES AND METHOD OF MANUFACTURE THEREOF A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline...	05/03/2012
20120104359	Method of Fabricating Optical Devices Using Laser Treatment of Contact Regions of Gallium and Nitrogen Containing Material A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions....	05/03/2012
20120068156	InN Nanowire Based Multifunctional Nanocantilever Sensors Sensor are generally provided that include a layer of silicon oxide on a portion of a n+ layer to form an uneven surface where the layer of silicon oxide defines a thicker region than an exposed portion of the n+ layer. First and second metal contacts can be on the laye...	03/22/2012
20120032145	DETECTION DEVICE, LIGHT-RECEIVING ELEMENT ARRAY, SEMICONDUCTOR CHIP, METHOD FOR MANUFACTURING THE SAME, AND OPTICAL SENSOR APPARATUS A detection device includes a light-receiving element array and a read-out integrated circuit (CMOS), bumps of the light-receiving element array being bonded to bumps of the read-out integrated circuit, and at least one of the light-receiving element array and the read-...	02/09/2012
20120032146	APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed....	02/09/2012
20120032137	SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and a...	02/09/2012
20120025167	Vertical Light Emitting Diode (VLED) Die Having Electrode Frame And Method Of Fabrication A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor...	02/02/2012
20120025169	NANOSTRUCTURE ARRAY TRANSISTOR Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that m...	02/02/2012
20120018702	SURFACE AND GAS PHASE DOPING OF III-V SEMICONDUCTORS Compound semiconductor devices and methods of doping compound semiconductors are provided. Embodiments of the invention provide post-deposition (or post-growth) doping of compound semiconductors, enabling nanoscale compound semiconductor devices including diodes and tra...	01/26/2012
20120018699	METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO₂mask into stripes oriented in the gallium nitride <...	01/26/2012
20120018703	OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF Manufacturing semiconductor heterostructures by way of molecular beam epitaxy, including placing a substrate into a first vacuum chamber, heating the substrate to a first temperature, depositing from at least one molecular beam a first epitaxial layer of a first materia...	01/26/2012
20120012813	OPTICAL DEVICE TO EMIT POLARIZED LIGHT An optical device capable of emitting polarized light includes a light emitting means, two multi-layer optical films disposed above and below the light emitting means and two metal layers. The two metal layers cover the two multi-layer optical layers from the upper and ...	01/19/2012
20120012816	PHOTODETECTORS USING RESONANCE AND METHOD OF MAKING An infrared photodetector comprising: a thin contact layer substantially transparent to infrared light; an absorption layer positioned such that light admitted through the substantially transparent thin contact area passes through the absorption layer; the absorption la...	01/19/2012
20120007046	CARBON NANOTUBE HYBRID PHOTOVOLTAICS Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at indiv...	01/12/2012
20120007047	SEMICONDUCTOR LIGHT-EMITTING DEVICE A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, a...	01/12/2012
20120006390	Nano-wire solar cell or detector Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced material cost compared to conventional planar approaches for multi-junction solar...	01/12/2012
20120007045	P-TYPE SEMICONDUCTOR DEVICE COMPRISING TYPE-2 QUANTUM WELL AND FABRICATION METHOD THEREOF Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method inc...	01/12/2012
20110315953	METHOD OF FORMING COMPOUND SEMICONDUCTOR A method of forming a semiconductor is provided and includes patterning a pad and a nanowire onto a wafer, the nanowire being substantially perpendicular with a pad sidewall and substantially parallel with a wafer surface and epitaxially growing on an outer surface of t...	12/29/2011
20110315958	HIGH OPERATING TEMPERATURE SPLIT-OFF BAND INFRARED DETECTOR WITH DOUBLE AND/OR GRADED BARRIER A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers s...	12/29/2011
20110278539	GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming first and second nanowire channels connected at each end to semiconductor pads at first and second wafer regions, respectively, with second nanowire channel si...	11/17/2011
20110278537	SEMICONDUCTOR EPITAXIAL STRUCTURES AND SEMICONDUCTOR OPTOELECTRONIC DEVICES COMPRISING THE SAME A semiconductor epitaxial structure includes a substrate; a semiconductor epitaxial stack layers formed on the substrate; and a plurality of semiconductor buffer layers deposited between the substrate and the semiconductor epitaxial layer with a gradually varied composi...	11/17/2011
20110272671	SEMICONDUCTOR DEVICE AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE A semiconductor device comprising a quantum dot and a plurality of layers, wherein said plurality of layers comprises: a first layer; a stressor layer; and a patterned layer wherein said stressor layer overlies said first layer and said patterned layer overlies said str...	11/10/2011
20110266521	POROUS AND NON-POROUS NANOSTRUCTURES Disclosed are a variety of porous and non-porous wire-like structures of microscopic and nanoscopic scale. For instance, disclosed are structures that comprise a porous object that comprises: (i) a first region; and (ii) a second region adjacent to the first region alon...	11/03/2011
20110253982	VERTICAL GROUP III-V NANOWIRES ON SI, HETEROSTRUCTURES, FLEXIBLE ARRAYS AND FABRICATION Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber...	10/20/2011
20110249322	Nanowire-based opto-electronic device Nanowire-based opto-electronic devices including nanowire lasers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire...	10/13/2011
20110240106	PHOTOVOLTAIC DEVICES WITH DEPLETED HETEROJUNCTIONS AND SHELL-PASSIVATED NANOPARTICLES Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one side of the junction between these two layers is substantially depleted of charge carriers, i.e., both free elec...	10/06/2011
20110227040	TEMPERATURE SENSOR AND MANUFACTURING METHOD OF TEMPERATURE SENSOR A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with ...	09/22/2011
20110227041	Electronic Devices and Thermal Image Sensors that Utilize Embedded Quantum Dots Integrated circuit devices include thermal image sensors that utilize quantum dots therein to provide negative resistance characteristics to at least portions of the sensors. The thermal image sensor may include a sensing unit configured to absorb radiation incident on ...	09/22/2011
20110223110	STABLE INDIUM-CONTAINING SEMICONDUCTOR NANOCRYSTALS Nanocrystals having an indium-based core and methods for making them and using them to construct core-shell nanocrystals are described. These core-shell nanocrystals are highly stable and provide higher quantum yields than known nanocrystals of similar composition, and ...	09/15/2011
20110220866	SOLID STATE LIGHTING DEVICES GROWN ON SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material...	09/15/2011
20110215297	Formation of Nanowhiskers on a Substrate of Dissimilar Material A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentia...	09/08/2011
20110204328	NITRIDE BASED DEVICES INCLUDING A SYMMETRICAL QUANTUM WELL ACTIVE LAYER HAVING A CENTRAL LOW BANDGAP DELTA-LAYER A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandg...	08/25/2011
20110204329	NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11	08/25/2011
20110194336	Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is c...	08/11/2011
20110193062	Growth of and Defect Reduction in Nanoscale Materials Methods by which the growth of a nanostructure may be precisely controlled by an electrical current are described here. In one embodiment, an interior nanostructure is grown to a predetermined geometry inside another nanostructure, which serves as a reaction chamber. Th...	08/11/2011
20110186815	NITRIDE SEMICONDUCTOR DEVICE There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quan...	08/04/2011
20110175055	SOLID STATE LIGHTING DEVICE ON A CONDUCTIVE SUBSTRATE A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel t...	07/21/2011
20110175059	II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end....	07/21/2011

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Class 257/14 - Quantum well