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| Application No. | Application Title | Issue Date |
| 20110049111 | COLOR SYSTEM FOR ETCHING GAS A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit ... | 03/03/2011 |
| 20110000894 | COOLING BLOCK FORMING ELECTRODE The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminu... | 01/06/2011 |
| 20100154558 | METHOD AND INSTALLATION FOR EXPOSING THE SURFACE OF AN INTEGRATED CIRCUIT The invention relates to a method for exposing an integrated circuit by ablating the polymer coating initially covering the integrated circuit, characterised in that it comprises the combined application of a laser radiation and a plasma onto the coating initially cover... | 06/24/2010 |
| 20090250444 | Microwave plasma processing device A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply mem... | 10/08/2009 |
| 20090127234 | PLASMA PROCESSING CHAMBER WITH GUARD RING FOR UPPER ELECTRODE ASSEMBLY A plasma processing chamber, which includes an upper electrode assembly, a lower electrode assembly, and a plasma confinement assembly. The upper electrode assembly includes an upper electrode, a backing member, the backing member attachable to an upper surface of the u... | 05/21/2009 |
| 20080099448 | Quartz guard ring An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface... | 05/01/2008 |
| 20080099447 | Plasma processing apparatus and plasma processing method A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide... | 05/01/2008 |
| 20080078750 | Directed Multi-Deflected Ion Beam Milling of a Work Piece and Determining and Controlling Extent Thereof Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected i... | 04/03/2008 |
| 20080029493 | Plasma generator A plasma generator comprising a propagation chamber propagating an electromagnetic radiation, and a plasma-generating chamber associated with the propagation chamber; said propagation chamber has a passage region of increasing width on moving away from the entrance regi... | 02/07/2008 |
| 20070267389 | Plasma treatment installation A plasma treatment installation comprising at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece ... | 11/22/2007 |
| 20070235425 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves ... | 10/11/2007 |
| 20070235426 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the se... | 10/11/2007 |
