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| Application No. | Application Title | Issue Date |
| 20110024399 | PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lo... | 02/03/2011 |
| 20100181294 | FOCUS RING HEATING METHOD, PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a p... | 07/22/2010 |
| 20100154558 | METHOD AND INSTALLATION FOR EXPOSING THE SURFACE OF AN INTEGRATED CIRCUIT The invention relates to a method for exposing an integrated circuit by ablating the polymer coating initially covering the integrated circuit, characterised in that it comprises the combined application of a laser radiation and a plasma onto the coating initially cover... | 06/24/2010 |
| 20100065535 | METHOD AND APPARATUS FOR GENERATING A PLASMA FIELD A method and associated apparatus for generating a plasma field, including: arranging the points of discharge of a plurality of electrodes into a plane, applying voltage to each electrode, providing at least one grounded electrode, and controlling the path between the e... | 03/18/2010 |
| 20090242520 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving u... | 10/01/2009 |
| 20090001057 | Dual damascene trench depth detection and control using voltage impedance RF probe In one embodiment, a system to measure changes and a dual damascene trench depth, comprises a power source, and impedance matching network coupled to the power source and to an electrode, a radio frequency sensor coupled to the impedance matching network, and a controll... | 01/01/2009 |
| 20080078750 | Directed Multi-Deflected Ion Beam Milling of a Work Piece and Determining and Controlling Extent Thereof Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected i... | 04/03/2008 |
