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Class 204/192.32 - Sputter etching


Subclass of Class 204 - Chemistry: electrical and wave energy
Definition: Processes for removing materials from a substrate wherein
No. of applications: 36
Last issue date: 10/20/2011


Application No.Application TitleIssue Date
20110253674Method and Chamber for Inductively Coupled Plasma Processing for Cylinderical Material With Three-Dimensional Surface
The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece wi...
10/20/2011
20110233050MAGNETIC LENSING TO IMPROVE DEPOSITION UNIFORMITY IN A PHYSICAL VAPOR DEPOSITION (PVD) PROCESS
A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field im...
09/29/2011
20110155297METHOD OF APPLYING AN ADHESIVE LAYER ON THINCUT SEMICONDUCTOR CHIPS OF A SEMICONDUCTOR WAFER
The invention relates to a method for making a semiconductor. In one embodiment the method includes applying an adhesive layer to ground-thin or thinned semiconductor chips of a semiconductor wafer. In this embodiment, the adhesive layer composed of curable adhesive is ...
06/30/2011
20110143049LUBRICANT REMOVAL TO REUSE DISKS FOR CONDITIONING DEPOSITION TOOLS
A disk that is identified as defective in a manufacturing process is reused for conditioning a deposition tool that deposits a magnetic material onto disks. After the disk has been identified as defective, a surface of the disk is cleaned in a cleaning tool to remove a ...
06/16/2011
20110108956ETCHING PROCESS FOR SEMICONDUCTORS
A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The e...
05/12/2011
20110111171SEED CRYSTAL FOR SILICON CARBIDE SINGLE CRYSTAL GROWTH, METHOD FOR PRODUCING THE SEED CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL
A seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder. The seed crystal includes a seed crystal (4) formed of silicon carbide having one surface ...
05/12/2011
20110104902PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be pro...
05/05/2011
20100243430Apparatus and method for magnetic field assisted electrochemical discharge machining
In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and effic...
09/30/2010
20100230275METHOD AND ARRANGEMENT FOR REDUNDANT ANODE SPUTTERING HAVING A DUAL ANODE ARRANGEMENT
In a method in which two anodes are operated alternately opposite each other as plasma discharge anodes and as cathodes for self-cleaning, and the cathodes of the plasma discharge are recurrently briefly reversed in polarity, and an arrangement comprising a cathode and ...
09/16/2010
20100230385METHOD AND SYSTEM FOR TONE INVERTING OF RESIDUAL LAYER TOLERANT IMPRINT LITHOGRAPHY
A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist layer. A portion of the cladding layer is used as a hard mask for a subseq...
09/16/2010
20100213161Capillary-Channel Probes For Liquid Pickup, Transportation And Dispense Using Stressy Metal
Fluidic conduits, which can be used in microarraying systems, dip pen nanolithography systems, fluidic circuits, and microfluidic systems, are disclosed that use channel spring probes that include at least one capillary channel. Formed from spring beams (e.g., stressy m...
08/26/2010
20100206720METHOD OF PRODUCING INORGANIC NANOPARTICLES
A method of producing inorganic nanoparticles includes: (a) providing a layered structure including a substrate and an inorganic layer; (b) disposing the layered structure in a vacuum chamber, vacuuming the vacuum chamber, and introducing a gas into the vacuum chamber; ...
08/19/2010
20100187101METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
In a semiconductor device and a method of manufacturing the semiconductor device, lower electrodes having cylindrical shapes are provided to be arranged repeatedly on a substrate. Upper surfaces of the lower electrodes are flat so that the lower electrodes have uniform ...
07/29/2010
20100104450AIR-STABLE ALKALI OR ALKALINE-EARTH METAL DISPENSERS
There are described dispensers (10; 20; 30; 40; 50; 60) of alkali or alkaline-earth metals, comprising deposits of getter materials (13; 23; 33; 43; 53; 63) and alkali or alkaline-earth metal sources (12, 22; 32; 42; 53; 63), in which the sources of...
04/29/2010
20100032581MICRO-GRIPPER
A method is described for producing a micro-gripper, which comprises a base body and a gripping body connected integrally to the base body, which projects beyond the base body and provides a receptacle slot on a free end area in such a way that a micrometer-scale or sub...
02/11/2010
20100025231Method for cleaning optical element of EUV light source device and optical element cleaning device
A method for cleaning an optical element of an extreme ultraviolet light source device for removing, from the optical element in a chamber, scattered matter generated together with extreme ultraviolet light by plasma formed through laser beam excitation of a target in t...
02/04/2010
20100022030DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES
The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate...
01/28/2010
20100011550Controlled corrosion processes utilizing one atmosphere glow discharge plasma (OAGDP) in the manufacture of lead acid batteries
Controlled corrosion processes in the production of lead acid batteries, wherein the processes utilize one atmospheric glow discharge plasma (OAGDP) to generate etched and chemically altered grids to increase the development of electrically conductive lead dioxide. The ...
01/21/2010
20100006427REACTOR FOR CARRYING OUT AN ETCHING METHOD FOR A STACK OF MASKED WAFERS AND AN ETCHING METHOD
A reactor for carrying out an etching method for a stack of masked wafers, using an etching gas, preferably chlorotrifluoride (ClF3), wherein the reactor includes a device for carrying out a plasma process. An etching method for masked wafers, using an etchin...
01/14/2010
20100006142Deposition apparatus for improving the uniformity of material processed over a substrate and method of using the apparatus
Deposition apparatus for uniformly forming material on a substrate in accordance with an exemplary embodiment is provided. The deposition apparatus includes an energy source, an electrode in a facing, spaced relationship with respect to the substrate, and interface stru...
01/14/2010
20090314635PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND ORGANIC ELECTRON DEVICE
An organic film and a metal electrode (a cathode film) are formed on an indium tin oxide (ITO) of a substrate. The plasma processing apparatus supplies at least one of a predetermined processing gas for chemically reacting with the organic film and a predetermined inert...
12/24/2009
20090266705METHOD OF MANUFACTURING VERTICAL MAGNETIC HEAD
The method of manufacturing a vertical magnetic head comprises the steps of: forming a resist pattern including a concave section on a wafer substrate; laminating a plurality of films in the concave section until forming a prescribed multilayer structure of the main mag...
10/29/2009
20090229972METHOD AND APPARATUS FOR PRODUCING A FEATURE HAVING A SURFACE ROUGHNESS IN A SUBSTRATE
An apparatus for producing features having a surface roughness in a substrate includes, according to one embodiment, a conductive first electrode disposed in opposition to a conductive second electrode, where the first and second electrodes are spaced apart from each ot...
09/17/2009
20090200269PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE
A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in...
08/13/2009
20090176120HIGHLY ELECTRICALLY CONDUCTIVE SURFACES FOR ELECTROCHEMICAL APPLICATIONS
A method is described that can be used in electrodes for electrochemical devices and includes disposing a precious metal on a top surface of a corrosion-resistant metal substrate. The precious metal can be thermally sprayed onto the surface of the corrosion-resistant me...
07/09/2009
20090145747METHOD AND INSTALLATION FOR THE VACUUM COLOURING OF A METAL STRIP BY MEANS OF MAGNETRON SPUTTERING
A magnetron sputtering method for vacuum coloring a metal strip passing above at least one conductive counter electrode in a vacuum chamber. The method creates a plasma in a gas close to the metal strip, such as to generate radicals and/or ions that act on the strip, a ...
06/11/2009
20080271991Apparatus and Method for Supercritical Fluid Removal or Deposition Processes
A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably inc...
11/06/2008
20080211605Coupling Lines For a Yig Filter or Yig Oscillator and Method For Producing the Coupling Lines
A coupling conductor for a YIG filter or YIG oscillator, which may be produced from a metallic foil by eroding, laser cutting and/or etching of a metallic foil. The coupling conductor includes at least one curved section, which at least partially surrounds a YIG element...
09/04/2008
20080178444PIEZOELECTRIC THIN FILM RESONATOR AND MANUFACTURING METHOD THEREOF
A piezoelectric thin film resonator which can reduce variations in resonant frequency and resonant resistance by uniformly planarizing a structural film, and a method of manufacturing the piezoelectric thin film resonator. The piezoelectric thin film resonator has a sub...
07/31/2008
20080181810Magnetic Film of Oxide-Containing Cobalt Base Alloy, Oxide-Containing Cobalt Base Alloy Target, and Manufacturing Method Thereof
A magnetic film of an oxide-containing cobalt base alloy has a smaller coercivity difference than conventional magnetic films. A target material and a sputtering target of the invention are capable of forming the magnetic film. A manufacturing method of the target mater...
07/31/2008
20080179183OFFSET MAGNET COMPENSATION FOR NON-UNIFORM PLASMA
A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed...
07/31/2008
20080173538Method and apparatus for sputtering
A sputtering apparatus includes a target electrode and a bias source electrically coupled to the target electrode. A wafer chuck is spaced from the target electrode. The wafer chuck is partitioned into a plurality of zones, each zone being coupled to receive an AC signa...
07/24/2008
20080121620PROCESSING CHAMBER
A processing system includes a chamber. A plurality of processing stations in a center region in the chamber can be sequentially positioned when viewed in a first direction. The plurality of processing stations is configured to provide at least one processing step selec...
05/29/2008
20080093212BY-PRODUCT COLLECTING PROCESSES FOR CLEANING PROCESSES
An apparatus and a method for operating the same. The method includes providing an apparatus which includes a chamber, wherein the chamber includes first and second inlets, an anode and a cathode structures in the chamber, and a wafer on the cathode structure. A cleanin...
04/24/2008
20080023320Method for Manufacturing Separator for Fuel Cell
A method for manufacturing a titanium separator to be used in a fuel cell. In this method, an oxide film (66) is removed from a surface (21) of a separator material (51) by sputtering. Then, separator material is heated within a range of 350°C.-500...
01/31/2008
20080014420Surface treatment for titanium or titanium-alloys
The present invention relates to a process for forming a novel coating on the surface of Titanium (Ti) or Ti-alloy substrates. The layered coating improves, among others, the overall hardness of the surface and leads to a surface that is shinier and more resistant to fi...
01/17/2008
 
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