Quotables
"The idea that cavalry will be replaced by these iron coaches is absurd. It is little short of treasonous."
Aide-de-camp to Field Marshal Haig ; At a tank demonstration, 1916
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Application No. | Application Title | Issue Date |
| 20120080090 | Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same Certain example embodiments relate to a transparent conductor film stack with cadmium stannate used as a front contact layer and/or a buffer layer in a photovoltaic device or the like. The cadmium stannate-based layers may be provided between the front glass substrate a... | 04/05/2012 |
| 20120049183 | ELECTRONIC DEVICE, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND SPUTTERING TARGET A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large... | 03/01/2012 |
| 20120048726 | METHODS OF SPUTTERING USING A NON-BONDED SEMICONDUCTING TARGET A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate... | 03/01/2012 |
| 20120043658 | Semiconductor Constructions; And Methods For Providing Electrically Conductive Material Within Openings Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include met... | 02/23/2012 |
| 20120025148 | SPUTTERING TARGET OF OXIDE SEMICONDUCTORS AND THE MANUFACTURING METHODS OF OXIDE SEMICONDUCTOR LAYERS A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposel... | 02/02/2012 |
| 20120024366 | Thin film solar cell structure and fabricating method thereof A thin film solar cell structure and the fabricating method thereof are disclosed. A passivation layer is embedded into the thin film solar cell structure to be in contact with an absorbing layer. The interface trap density of the absorbing layer is reduced by the surfa... | 02/02/2012 |
| 20120003836 | MOVABLE GROUND RING FOR A PLASMA PROCESSING CHAMBER A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasm... | 01/05/2012 |
| 20110306165 | METHOD FOR PRODUCING a-IGZO OXIDE THIN FILM There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an amorphous In—Ga—Zn—O based oxide thin film production method including:... | 12/15/2011 |
| 20110278510 | Tin-Doped Indium Oxide Thin Films And Method For Making Same The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.... | 11/17/2011 |
| 20110256673 | DEPOSITION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating laye... | 10/20/2011 |
| 20110240462 | DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE An object of one embodiment of the present invention is to provide a deposition apparatus for depositing an oxide semiconductor film into which impurities are not mixed. Another object is to provide a method for manufacturing a semiconductor device including an oxide se... | 10/06/2011 |
| 20110212268 | METHOD FOR HIGH VOLUME MANUFACTURE OF ELECTROCHEMICAL CELLS USING PHYSICAL VAPOR DEPOSITION Embodiments of the present invention relate to apparatuses and methods for fabricating electrochemical cells. One embodiment of the present invention comprises a single chamber configurable to deposit different materials on a substrate spooled between two reels. In one ... | 09/01/2011 |
| 20110203916 | MAGNETRON-SPUTTERING FILM-FORMING APPARATUS AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE A magnetron-sputtering film-forming apparatus includes: a vacuum film-forming chamber (11); electrostatic chuck units (12) for adjusting a temperature of the substrate (14); a target (15) for causing high-frequency magnetron sputtering; power... | 08/25/2011 |
| 20110198212 | SPUTTERING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate hol... | 08/18/2011 |
| 20110198213 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. [Solving Means] The sputtering apparatus according to th... | 08/18/2011 |
| 20110180763 | OXIDE SINTERED BODY AND SPUTTERING TARGET An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In<... | 07/28/2011 |
| 20110180392 | SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR, COMPRISING InGaO3(ZnO) CRYSTAL PHASE AND PROCESS FOR PRODUCING THE SPUTTERING TARGET Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. Th... | 07/28/2011 |
| 20110175084 | THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 at... | 07/21/2011 |
| 20110171395 | METHOD OF FORMING A SPUTTERING TARGET A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (... | 07/14/2011 |
| 20110139246 | METHODS FOR FORMING A TRANSPARENT CONDUCTIVE OXIDE LAYER ON A SUBSTRATE Methods of depositing a transparent conductive oxide layer on a substrate are generally disclosed. A shield of greater than about 75% by weight molybdenum can be attached to a first surface of a substrate such that the shield contacts at least about 75% of the first sur... | 06/16/2011 |
| 20110132745 | METHOD OF FABRICATING VARIABLE RESISTANCE LAYER FOR RESISTANCE MEMORY A method of fabricating a variable resistance layer of a resistance memory is disclosed. The method includes placing a substrate in a sputtering chamber that has a copper target and a silicon oxide (SiO2) target or has a complex target made from copper and si... | 06/09/2011 |
| 20110127158 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE In a copper damascene wiring process, a tantalum-based laminated film, which is used as a barrier metal film, is continuously formed in a sputtering deposition chamber. When the continuous deposition process is discontinuously applied to a number of wafers, a tantalum f... | 06/02/2011 |
| 20110127157 | LOW IMPEDANCE PLASMA A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the magnetic array and acts as a cathode (2a | 06/02/2011 |
| 20110108116 | P-type NiO conducting film for organic solar cell, a method for preparation of NiO conducting film, and an organic solar cell with enhanced light-to-electric energy conversion using the same A p-type NiO conducting film for an organic solar cell, a preparation method thereof, and an organic solar cell using the same and having enhanced power conversion efficiency, are provided, wherein the NiO conducting film is fabricated by vacuum sputtering in which nick... | 05/12/2011 |
| 20110100446 | High haze transparent contact including ion-beam treated layer for solar cells, and/or method of making the same Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze ... | 05/05/2011 |
| 20110067998 | METHOD OF MAKING AN ELECTRICALLY CONDUCTIVE CADMIUM SULFIDE SPUTTERING TARGET FOR PHOTOVOLTAIC MANUFACTURING An electrically conductive cadmium sulfide sputtering target, the method of making the same, and the method of manufacturing a photovoltaic cell using the same.... | 03/24/2011 |
| 20110067997 | SYNTHESIS OF HIGH-PURITY BULK COPPER INDIUM GALLIUM SELENIDE MATERIALS A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selec... | 03/24/2011 |
| 20110061724 | Photovoltaic Cell Module And Method Of Forming Same A photovoltaic cell module, a photovoltaic array including at least two modules, and a method of forming the module are provided. The photovoltaic cell module includes a substrate and a tie layer disposed on the substrate. The tie layer has a depth of penetration of fro... | 03/17/2011 |
| 20110062016 | METHOD FOR MANUFACTURING ALUMINUM-CONTAINING NITRIDE INTERMEDIATE LAYER, METHOD FOR MANUFACTURING NITRIDE LAYER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT There is provided a method for manufacturing an aluminum-containing nitride intermediate layer, a method for manufacturing a nitride layer, and a method for manufacturing a nitride semiconductor element by using the nitride layer, in which at least one of the following ... | 03/17/2011 |
| 20110065236 | Method for maintaining a smooth surface of crystallizable material A method for maintaining a smooth surface of crystallizable material is disclosed. First, a substrate is provided. A target material layer is then formed on the substrate, with the target material being a crystallizable material. A protecting layer is subsequently forme... | 03/17/2011 |
| 20110048515 | PASSIVATION LAYER FOR WAFER BASED SOLAR CELLS AND METHOD OF MANUFACTURING THEREOF A solar cell module layer stack is described. The layer stack includes a doped silicon wafer substrate, a back contact layer for the solar cell module, and a first sputtered and annealed passivation layer between the wafer substrate and the back contact layer, wherein t... | 03/03/2011 |
| 20110048928 | METHODS TO FABRICATE NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES USING PHYSICAL VAPOR DEPOSITION Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for contro... | 03/03/2011 |
| 20110011460 | Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the ... | 01/20/2011 |
| 20110005922 | Methods and Apparatus for Protecting Plasma Chamber Surfaces A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also include... | 01/13/2011 |
| 20110000541 | METHOD FOR DEPOSITION A FILM ONTO A SUBSTRATE Disclosed is a method for depositing a film onto a substrate, with a sputter deposition process
| 01/06/2011 |
| 20100330738 | Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with le... | 12/30/2010 |
| 20100304571 | FILM ADHESIVE FOR SEMICONDUCTOR VACUUM PROCESSING APPARATUS A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stress... | 12/02/2010 |
| 20100301379 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga ele... | 12/02/2010 |
| 20100294364 | Thermal Spray For Solar Concentrator Fabrication A solar concentrator including a substantially-transparent optical element, a reflective material disposed on a convex surface of the optical element, an insulator layer on the reflective material, a conductive material that is thermal sprayed onto the insulator layer, ... | 11/25/2010 |
| 20100206719 | METHOD FOR MANUFACTURING SOLAR CELL A method for manufacturing a solar cell provided with an upper electrode which functions as an electrode for extracting electric power at a light incidence side of the solar cell and includes a ZnO-based transparent conductive film, the method comprising: forming the up... | 08/19/2010 |
