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| Application No. | Application Title | Issue Date |
| 20120103411 | PHOTOVOLTAIC MODULE SUBSTRATE A photovoltaic module may include a back glass including a cobalt oxide or copper oxide.... | 05/03/2012 |
| 20120103419 | GROUP-III NITRIDE SOLAR CELLS GROWN ON HIGH QUALITY GROUP-III NITRIDE CRYSTALS MOUNTED ON FOREIGN MATERIAL A group-III nitride solar cell is grown on a thin piece of a group-III nitride crystal that has been mounted on a carrier comprised of a foreign material. The thin piece is a thin layer with a thickness that ranges from approximately 5 microns to approximately 300 micro... | 05/03/2012 |
| 20120103418 | SINGLE JUNCTION TYPE CIGS THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE THIN FILM SOLAR CELL Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light a... | 05/03/2012 |
| 20120080091 | FABRICATION OF CIS OR CIGS THIN FILM FOR SOLAR CELLS USING PASTE OR INK Provided is a method for preparing a copper indium selenide (CIS) or copper indium gallium selenide (CIGS) thin film, including: (1) mixing Cu, In and Ga precursors in a solvent and adding a polymer binder to obtain a paste or ink; (2) coating the obtained CIG precursor... | 04/05/2012 |
| 20120080092 | HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light ab... | 04/05/2012 |
| 20120067414 | CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer materi... | 03/22/2012 |
| 20120067425 | ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the meta... | 03/22/2012 |
| 20120067422 | PHOTOVOLTAIC DEVICE WITH A METAL SULFIDE OXIDE WINDOW LAYER Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the grou... | 03/22/2012 |
| 20120067424 | ANNEALING PROCESSES FOR PHOTOVOLTAICS Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a so... | 03/22/2012 |
| 20120042942 | SOLAR CELL HAVING A BUFFER LAYER WITH LOW LIGHT LOSS Provided is a solar cell that includes: a substrate; a first electrode disposed on the substrate; a light absorbing layer disposed on the first electrode; a buffer layer disposed on the light absorbing layer; and a second electrode disposed on the buffer layer, wherein ... | 02/23/2012 |
| 20120031492 | Gallium-Containing Transition Metal Thin Film for CIGS Nucleation A solar cell comprises a substrate, a first transition metal layer comprising an alkali element or an alkali compound located over the substrate, a second transition metal layer comprising gallium located over the first transition metal layer, at least one p-type semico... | 02/09/2012 |
| 20120017993 | SEMICONDUCTOR DEVICE AND SOLAR BATTERY USING THE SAME A semiconductor device includes a semiconductor circuit on an insulated metal substrate, which includes an anodized film formed on at least one side of an Al substrate, wherein the Al substrate has a potential higher than an average potential of the semiconductor circui... | 01/26/2012 |
| 20120017983 | BUFFER LAYER FORMATION Manufacturing a photovoltaic device can include a vapor transport deposition process.... | 01/26/2012 |
| 20120017990 | PHYLLOSILICATE COMPOSITES CONTAINING MICA Disclosed is a mica paper composite and a process for making the mica paper composite. Particularly disclosed is a process for chemically planarizing the surface of a mica composite. Articles comprising the mica paper composite are also disclosed.... | 01/26/2012 |
| 20120012182 | PHOTOELECTRIC CONVERSION SEMICONDUCTOR LAYER, MANUFACTURING METHOD THEREOF, PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL A photoelectric conversion semiconductor layer having high photoelectric conversion efficiency is provided at a low cost. Photoelectric conversion semiconductor layer is a layer that generates a current by absorbing light and is formed of a particle layer in which a plu... | 01/19/2012 |
| 20120006408 | Alternating Bias Hot Carrier Solar Cells Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alter... | 01/12/2012 |
| 20120006403 | Solar Cells With A Barrier Layer Based On Polysilazane The invention relates to a thin-film solar cell (10) comprising a substrate (1) of metal or glass, a dielectric barrier layer (2) based on a polysilazane and a photovoltaic layer structure (4) of the copper-indium sulphide (CIS) type or the c... | 01/12/2012 |
| 20120000532 | MANUFACTURE OF PHOTOVOLTAIC DEVICES A method and apparatus for depositing a film on a substrate includes subjecting material to an energy beam.... | 01/05/2012 |
| 20120000531 | CIGS Solar Cell and Method for Manufacturing thereof A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein ... | 01/05/2012 |
| 20110308616 | Photoelectric Conversion Device It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. In order to achieve this object, the photoelectric conversion device includes a firs... | 12/22/2011 |
| 20110308613 | Photovoltaic Devices with Nanostructure/Conjugated Polymer Hybrid Layer and its Matched Electron Transporting Layer The present invention discloses a photovoltaic device comprising a multilayer structure for generating and transporting charge, wherein the multilayer structure comprises: a substrate; an anode layer; a hole transporting layer; a first nanostructure/conjugated polymer h... | 12/22/2011 |
| 20110303268 | HIGH EFFICIENCY InGaAsN SOLAR CELL AND METHOD OF MAKING An InGaAsN solar cell includes an InGaAsN structure having a bandgap between 1.0 eV to 1.05 eV, and a depletion region width of at least 1.0 μm.... | 12/15/2011 |
| 20110303292 | LIGHT-ABSORBING MATERIAL AND PHOTOELECTRIC CONVERSION ELEMENT USING THE SAME There is provided a new light-absorbing material and a photoelectric conversion element using the same, which are capable of improving conversion efficiency of a solar cell. The light-absorbing material in the present invention is made up of a GaN-based compound semicon... | 12/15/2011 |
| 20110284081 | PHOTOVOLTAIC THIN-FILM CELL PRODUCED FROM METALLIC BLEND USING HIGH-TEMPERATURE PRINTING The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fa... | 11/24/2011 |
| 20110277840 | METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is cha... | 11/17/2011 |
| 20110272027 | SOLAR PHOTOVOLTAIC DEVICES AND METHODS OF MAKING THEM Solar photovoltaic (PV) devices, e.g., those based on the Copper Indium Selenide (CIS) family of absorbers, including CuIn(1-x)Ga(X)Se2 (CIGS) absorber thin-film PV devices, are provided. Embodiments provide PV devices comprising an alkali metal-containing polymeric fil... | 11/10/2011 |
| 20110265875 | COPPER AND INDIUM BASED PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS Optoelectronic devices having enhanced conversion efficiencies and associated methods are provided. In one aspect, for example, a method of making an optoelectronic device can include applying an absorption layer onto a support substrate, the absorption layer including ... | 11/03/2011 |
| 20110259418 | Manufacturing Apparatus and Method for Large-Scale Production of Thin-Film Solar Cells A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InX... | 10/27/2011 |
| 20110232761 | SOLAR PHOTOVOLTAIC DEVICES HAVING OPTIONAL BATTERIES Solar photovoltaic (PV) devices, e.g., those based on the Copper Indium Selenide (CIS) family of absorbers, including CuIn(1-x)Ga(x)Se2 (CIGS) absorber thin-film PV devices, are provided. Embodiments provide PV devices comprising an alka... | 09/29/2011 |
| 20110232762 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT AND THIN-FILM SOLAR CELL A method for manufacturing a photoelectric conversion element including a step of preparing a substrate and a step of forming a photoelectric conversion layer made of a CIGS-based semiconductor compound on the substrate. The step of forming the photoelectric conversion ... | 09/29/2011 |
| 20110232760 | PHOTOELECTRIC CONVERSION DEVICE AND SOLAR CELL A photoelectric conversion device includes: a photoelectric conversion layer containing a semiconductor and having a first surface as a light absorption surface and a second surface opposite to the first surface; a first electrode formed substantially in contact with th... | 09/29/2011 |
| 20110226337 | THIN-FILM SOLAR BATTERY AND METHOD FOR PRODUCING THE SAME To provide a thin-film solar battery including a substrate, a first electrode, a photoelectric conversion layer and a second electrode, the first electrode, the photoelectric conversion layer and the second electrode being placed over the substrate, wherein the photoele... | 09/22/2011 |
| 20110226336 | CHALCOGENIDE-BASED MATERIALS AND IMPROVED METHODS OF MAKING SUCH MATERIALS The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or mo... | 09/22/2011 |
| 20110220204 | Method of Forming Light Absorption Layer and Solar Cell Structure Using the Same A method for forming a light absorption layer including the following steps is provided. A controlling precursor is wet coated on a base precursor. The band gap of the controlling precursor is larger than that of the base precursor. The controlling precursor is a Group ... | 09/15/2011 |
| 20110220178 | ASSEMBLIES COMPRISING A THERMALLY AND DIMENSIONALLY STABLE POLYIMIDE FILM, AN ELECTRODE AND A LIGHT ABSORBER LAYER, AND METHODS RELATING THERETO The assemblies of the present invention comprise an electrode, an light absorber layer and a polyimide film. The polyimide film contains from about 40 to about 95 weight percent of a polyimide derived from: i. at least one aromatic dianhydride, at least about 85 mole pe... | 09/15/2011 |
| 20110192463 | CIGS SOLAR CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. The alloy thin film l... | 08/11/2011 |
| 20110192454 | PHOTOVOLTAIC DEVICE WITH TRANSPARENT, CONDUCTIVE BARRIER LAYER The present invention provides strategies for providing photovoltaic devices that are more resistant to moisture and/or oxygen degradation and the accompanying migration of key elements such as Na, Li, and the lanthanoid series of elements from the absorber layer and th... | 08/11/2011 |
| 20110174377 | MANUFACTURING METHOD FOR FLEXIBLE DEVICE, FLEXIBLE DEVICE, SOLAR CELL, AND LIGHT EMITTING DEVICE Provided are a method of manufacturing a flexible device and the flexible device, a solar cell, and a light emitting device. The method of manufacturing a flexible device includes providing a device layer on a sacrificial substrate, contacting a flexible substrate on on... | 07/21/2011 |
| 20110168257 | Solar Cell Structure Utilization of the near percolation plasmonic nanostructures near the photoconversion layer in photovoltaic device provide significant enhancement in the efficiency. Photovoltaic devices utilizing efficiency enhancement due to utilization of near percolation plasmonic n... | 07/14/2011 |
| 20110155246 | THIN FILM SOLAR CELL AND MANUFACTURING METHOD THEREOF The present invention relates to a thin film solar cell and manufacturing method thereof. The thin film solar cell comprises a substrate, a front electrode layer, an absorber layer and a rear electrode layer stacked in such sequence, wherein the front electrode layer is... | 06/30/2011 |
