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| Application No. | Application Title | Issue Date |
| 20120103263 | PRE-HEAT RING DESIGNS TO INCREASE DEPOSITION UNIFORMITY AND SUBSTRATE THROUGHPUT Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and ... | 05/03/2012 |
| 20120103264 | METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for deposit... | 05/03/2012 |
| 20120067274 | FILM FORMING APPARATUS, WAFER HOLDER, AND FILM FORMING METHOD A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder fu... | 03/22/2012 |
| 20120040097 | ENHANCED WAFER CARRIER A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movemen... | 02/16/2012 |
| 20120031338 | SUSCEPTOR AND APPARATUS FOR CVD WITH THE SUSCEPTOR A susceptor and an apparatus for chemical vapor deposition (CVD) are provided. The susceptor includes a main body configured to include a mounting unit having an uneven plane, and a substrate supporting unit configured to be seated on the mounting unit. A bottom surface... | 02/09/2012 |
| 20120031340 | REACTION APPARATUS HAVING MULTIPLE ADJUSTABLE EXHAUST PORTS A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectivel... | 02/09/2012 |
| 20120024223 | Thin films and methods of making them using cyclohexasilane Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surface... | 02/02/2012 |
| 20120024479 | APPARATUS FOR CONTROLLING THE FLOW OF A GAS IN A PROCESS CHAMBER Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a p... | 02/02/2012 |
| 20120024230 | APPARATUSES AND SYSTEMS FOR FABRICATING THREE DIMENSIONAL INTEGRATED CIRCUITS The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One or more embodiments of systems, apparatuses, and/or methods according to the present invention are presented.... | 02/02/2012 |
| 20120021126 | Vacuum Vapor Coating Device for Coating a Substrate A vacuum vapor coating device for coating a substrate with a coating material, the vacuum vapor coating device comprising a chamber (1) into which vacuum can be created, the chamber (1) comprises: at least one support (3) for receiving the substrate... | 01/26/2012 |
| 20120015505 | METHOD AND DEVICE FOR PREPARING COMPOUND SEMICONDUCTOR FILM The present invention discloses a method and a device for preparing a compound semiconductor film. The method comprises the steps of: providing a substrate above at least an evaporation source in a vacuum condition; heating a source material contained in the evaporation... | 01/19/2012 |
| 20120015104 | Method and Apparatus for Depositing LED Organic Film In one embodiment the disclosure relates to an apparatus for depositing an organic material on a substrate, including a source heater for heating organic particles to form suspended organic particles; a transport stream for delivering the suspended organic particles to ... | 01/19/2012 |
| 20120009697 | CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers... | 01/12/2012 |
| 20110308464 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND STORAGE MEDIUM Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas... | 12/22/2011 |
| 20110308458 | Thin Film Deposition Apparatus Provided is a thin film deposition apparatus. The thin film deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head in... | 12/22/2011 |
| 20110308460 | ATOMIC LAYER DEPOSITION APPARATUS The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus ... | 12/22/2011 |
| 20110303154 | SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME A susceptor and a chemical vapor deposition (CVD) apparatus including the same. The susceptor has a shape of a disk with a hollow and includes a plurality of pockets formed in an upper surface of the susceptor to accommodate deposition targets; and susceptor channels fo... | 12/15/2011 |
| 20110303152 | SUPPORT STRUCTURE, PROCESSING CONTAINER STRUCTURE AND PROCESSING APPARATUS A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows horizontally from one side to the opposite side, includes a top plate section; a bottom section; and a plural... | 12/15/2011 |
| 20110283944 | CVD APPARATUS A CVD apparatus is provided, that can remarkably improve the quality and productivity of susceptors without causing increase in production cost or increase in size of the apparatus. A CVD apparatus is provided, for forming a SiC film on a surface of a carbonaceous subst... | 11/24/2011 |
| 20110283943 | VAPOR DEPOSITION APPARATUS A vapor deposition apparatus includes a deposition chamber, an umbrella-shaped supporting member, a plurality of coating precursor sources. The umbrella-shaped supporting member is received in the deposition chamber. The supporting member is configured for supporting a ... | 11/24/2011 |
| 20110277689 | SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed i... | 11/17/2011 |
| 20110277934 | METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; a... | 11/17/2011 |
| 20110274837 | ALD REACTOR, METHOD FOR LOADING ALD REACTOR, AND PRODUCTION LINE An ALD reactor for treating one or more substrates is provided. The ALD reactor includes at least one reaction chamber which has a front plate including gas connections for introducing starting materials, flushing gases and the like gases into the reaction chamber. In a... | 11/10/2011 |
| 20110271909 | COATING APPARATUS A coating apparatus includes a base, actuators, separating boards and a gas guide grill. The base includes a carrying surface for supporting a workpiece. The base defines recesses on the carrying surface. The actuators include shafts rotatably located in the recesses co... | 11/10/2011 |
| 20110265722 | WAFER TRAY FOR CVD DEVICE, HEATING UNIT FOR CVD DEVICE AND CVD DEVICE The present invention provides a wafer tray for a CVD device, heating unit for a CVD device provided with the wafer tray for a CVD device, and a CVD device provided with the wafer tray for a CVD device that includes a wafer tray main body provided with cavities enabling... | 11/03/2011 |
| 20110268879 | APPARATUS AND METHOD FOR HIGH-THROUGHPUT ATOMIC LAYER DEPOSITION Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a downwardly sloping process tunnel, extending in a transport direction and bounded by at least two tunnel walls. Both walls are provided with a plurality of gas inje... | 11/03/2011 |
| 20110263063 | SEAL CONFIGURATION FOR A SYSTEM FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The a... | 10/27/2011 |
| 20110262644 | METHOD AND SYSTEM FOR MASK HANDLING IN HIGH PRODUCTIVITY CHAMBER A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extension... | 10/27/2011 |
| 20110259270 | CARBON COMPONENT AND METHOD FOR MANUFACTURING THE SAME A carbon component having a hole therein and an outer surface covered with a ceramic coating, and a method for manufacturing the carbon component are provided. The carbon component includes two carbon plate members joined together. The hole is defined by a groove formed... | 10/27/2011 |
| 20110256315 | SHOWERHEAD ASSEMBLY WITH GAS INJECTION DISTRIBUTION DEVICES A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a... | 10/20/2011 |
| 20110253049 | Semiconductor processing apparatus There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in whi... | 10/20/2011 |
| 20110229719 | MANUFACTURING METHOD FOR CRYSTAL, MANUFACTURING APPARATUS FOR CRYSTAL, AND STACKED FILM A manufacturing method for a crystal, a manufacturing apparatus for a crystal, and a stacked film capable of growing a high-quality crystal are provided. The manufacturing method for a crystal includes the steps of: preparing a seed crystal having a frontside surface an... | 09/22/2011 |
| 20110220021 | APPARATUS FOR VAPOR PHASE PROCESSING OPHTHALMIC DEVICES This invention discloses apparatus for processing one or more of a Lens Precursor, a Lens Precursor Form and an ophthalmic Lens. The apparatus provides for vapor phase processing of the subject Lens Precursor, a Lens Precursor Form and an ophthalmic Lens.... | 09/15/2011 |
| 20110217465 | SHIELDS FOR SUBSTRATE PROCESSING SYSTEMS A shielding system for a physical vapor deposition (PVD) chamber is disclosed. The PVD chamber includes a pedestal supporting a substrate. The shielding system includes a first annular portion and a second annular portion of a pedestal shield. The first annular portion ... | 09/08/2011 |
| 20110214812 | GAS DISTRIBUTING MEANS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME A substrate processing apparatus includes a process chamber having a chamber lid and a chamber body to provide a reaction space and a gas distributing means including a plate and an injection part in the process chamber. The injection part includes a plurality of throug... | 09/08/2011 |
| 20110217849 | DEVICE AND METHOD FOR PRODUCING DIELECTRIC LAYERS IN MICROWAVE PLASMA A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) comprising a coaxial i... | 09/08/2011 |
| 20110209660 | METHODS AND APPARATUS FOR DEPOSITION PROCESSES Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper su... | 09/01/2011 |
| 20110212599 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in whic... | 09/01/2011 |
| 20110207299 | COMPOUND SEMICONDUCTOR MANUFACTURING DEVICE, COMPOUND SEMICONDUCTOR MANUFACTURING METHOD, AND JIG FOR MANUFACTURING COMPOUND SEMICONDUCTOR When compound semiconductor layers are formed on a compound semiconductor substrate (40) by sequentially layering group III nitride semiconductor crystalline layers by metal organic chemical vapor deposition method, the compound semiconductor substrate (40... | 08/25/2011 |
| 20110203523 | METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system con... | 08/25/2011 |
