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| Application No. | Application Title | Issue Date |
| 20120126355 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a firs... | 05/24/2012 |
| 20120107990 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR CRYSTAL GROWTH APPARATUS According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include a crystal growth process. The crystal growth process is configured to grow a stacked structure of compound semiconductor composed of a grou... | 05/03/2012 |
| 20120067286 | VAPOR DEPOSITION REACTOR SYSTEM AND METHODS THEREOF Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembl... | 03/22/2012 |
| 20120071000 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE A manufacturing apparatus for a semiconductor device, comprising: a reactor chamber configured to load a wafer therein; a gas supplying mechanism configured to supply a process gas into the reactor chamber; a gas discharging mechanism configured to discharge a gas from ... | 03/22/2012 |
| 20120070579 | METHOD AND APPARATUS FOR COATING GLASS SUBSTRATE A coating process for coating a surface of a glass substrate in normal air pressure, in which coating process at least one liquid starting material is atomized into droplets and the formed droplets are guided towards the surface to be coated. The formed droplets are vap... | 03/22/2012 |
| 20120048198 | VAPOR PHASE GROWTH APPARATUS Disclosed is a rotation/revolution type vapor phase growth apparatus capable of increasing the area of a semiconductor thin film that can be vapor-phase grown at a time, without upsizing a susceptor or the like. The vapor phase growth apparatus is a horizontal vapor pha... | 03/01/2012 |
| 20120048180 | FILM-FORMING MANUFACTURING APPARATUS AND METHOD It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas ... | 03/01/2012 |
| 20120031330 | SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth... | 02/09/2012 |
| 20120024231 | SEMICONDUCTOR GROWING APPARATUS A semiconductor growing apparatus including: susceptor having a main face and a side face, the main face receiving a substrate for growing a semiconductor layer, and the side face having a groove; a heating element for heating the susceptor.... | 02/02/2012 |
| 20120015476 | METHOD FOR PRODUCING SEMICONDUCTOR LAYERS AND COATED SUBSTRATES TREATED WITH ELEMENTAL SELENIUM AND/OR SULFER, IN PARTICULAR FLAT SUBSTRATES The invention relates to a method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, in particular flat substrates, containing at least one conducting, semiconducting and/or insulating layer, in which a substrate whi... | 01/19/2012 |
| 20120009764 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface ex... | 01/12/2012 |
| 20120006263 | FILM DEPOSITION APPARATUS When a film is to be deposited on a semiconductor substrate or the like in a heating ambient, the semiconductor substrate is caused to warp (curve) to a considerable extent merely due to an increased temperature. The warpage leads to problems such as degradation of the ... | 01/12/2012 |
| 20120003497 | COATING METHODS, SYSTEMS, AND RELATED ARTICLES Coated articles and methods and systems for coating the articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing i... | 01/05/2012 |
| 20120003789 | Apparatus for Manufacturing Thin Film Photovoltaic Devices An apparatus for fabricating thin film photovoltaic devices includes a deposition chamber for loading a pair of substrates. Two heater platens in a side-by-side configuration with a middle gap form intimate contact with the pair of substrates. Each heater platen has a s... | 01/05/2012 |
| 20120003389 | MOCVD REACTOR HAVING A CEILING PANEL COUPLED LOCALLY DIFFERENTLY TO A HEAT DISSIPATION MEMBER The invention relates to a device for depositing at least one, in particular crystalline, layer on at least one substrate (5), having a susceptor (2) for accommodating the at least one substrate (5), the susceptor forming the floor of a process cham... | 01/05/2012 |
| 20110315209 | SELECTIVELY DEPOSITED THIN FILM DEVICES AND METHODS FOR FORMING SELECTIVELY DEPOSITED THIN FILMS A method for selectively depositing a thin film structure on a substrate. The method includes providing a process gas to a surface of the substrate and directing concentrated electromagnetic energy from a source of energy to at least a portion of the surface. The proces... | 12/29/2011 |
| 20110315082 | FILM COATING APPARATUS A film coating apparatus for coating a patterned roller using an atomic layer deposition process includes a deposition chamber and a heater. The deposition chamber defines an inlet and an outlet. The inlet is misaligned with the outlet. The heater is received in the dep... | 12/29/2011 |
| 20110312188 | PROCESSING APPARATUS AND FILM FORMING METHOD A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the proces... | 12/22/2011 |
| 20110312192 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process cha... | 12/22/2011 |
| 20110306179 | MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates A device includes providing a silicon substrate; annealing the silicon substrate at a first temperature higher than about 900° C.; and lowering a temperature of the silicon substrate from the first temperature to a second temperature. A temperature lowering rate during... | 12/15/2011 |
| 20110303145 | Apparatus for chemical vapor deposition control A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to recei... | 12/15/2011 |
| 20110303152 | SUPPORT STRUCTURE, PROCESSING CONTAINER STRUCTURE AND PROCESSING APPARATUS A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows horizontally from one side to the opposite side, includes a top plate section; a bottom section; and a plural... | 12/15/2011 |
| 20110294283 | MOCVD REACTOR HAVING CYLINDRICAL GAS INLET ELEMENT The invention relates to a device for depositing semiconductor layers, comprising a process chamber (1) arranged substantially rotationally symmetrically about a center (11), a susceptor (2), a process chamber ceiling (3), a gas inlet element... | 12/01/2011 |
| 20110293832 | Method and apparatus for depositing thin layers of polymeric para-xylylene or substituted para-xylylene The invention relates to an apparatus and a method for depositing one or more thin layers of polymeric para-xylylene. Said apparatus comprises a heated evaporator (1) used for evaporating a solid or liquid starting material. A supply pipe (11) for a carrie... | 12/01/2011 |
| 20110283942 | FILM FORMING APPARATUS AND GAS INJECTION MEMBER A film forming apparatus includes: a chamber for holding a wafer; a susceptor on which the wafer is placed within the chamber; heaters which heat the wafer placed on the susceptor; and a shower plate disposed opposite to the susceptor to inject a film formation processi... | 11/24/2011 |
| 20110281443 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into... | 11/17/2011 |
| 20110274926 | POLYCRYSTALLINE SILICON ROD AND APPARATUS FOR PRODUCING THE SAME [Problems] To provide a polycrystalline silicon rod used for the recharging in the FZ method or the CZ method, the straight body portions thereof assuming an easily transferable shape and excelling in transferability. [Means for Solution] T... | 11/10/2011 |
| 20110265724 | METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS A metal-organic chemical vapor deposition (MOCVD) apparatus is described. The MOCVD apparatus includes a reaction chamber, a rotation stand, a wafer susceptor, a heater and a shower head. The reaction chamber includes an opening. The rotation stand is disposed within th... | 11/03/2011 |
| 20110265722 | WAFER TRAY FOR CVD DEVICE, HEATING UNIT FOR CVD DEVICE AND CVD DEVICE The present invention provides a wafer tray for a CVD device, heating unit for a CVD device provided with the wafer tray for a CVD device, and a CVD device provided with the wafer tray for a CVD device that includes a wafer tray main body provided with cavities enabling... | 11/03/2011 |
| 20110265723 | METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS A metal-organic chemical vapor deposition (MOCVD) apparatus is described. The MOCVD apparatus includes a reaction chamber, a rotation stand, a wafer susceptor, a heater and a shower head. The reaction chamber includes an opening. The rotation stand is disposed within th... | 11/03/2011 |
| 20110265725 | FILM DEPOSITION DEVICE AND SUBSTRATE PROCESSING DEVICE A film deposition device includes a substrate transporting device arranged in a vacuum chamber to include a circulatory transport path in which substrate mounting parts arranged in a row are transported in a circulatory manner, the circulatory transport path including a... | 11/03/2011 |
| 20110262641 | INLINE CHEMICAL VAPOR DEPOSITION SYSTEM An inline CVD system includes a manifold and a continuous transport system. The manifold has a plurality of ports. The ports include a first precursor port, a pair of second precursor ports and a pair of pumping ports. The first precursor port is disposed between the se... | 10/27/2011 |
| 20110259879 | Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers Embodiments of the invention generally relate to apparatuses and methods for utilizing a plurality of induction heat sources to uniformly heat a plurality of substrates within a processing chamber. By utilizing multiple heating zones that are each separately powered, th... | 10/27/2011 |
| 20110262644 | METHOD AND SYSTEM FOR MASK HANDLING IN HIGH PRODUCTIVITY CHAMBER A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extension... | 10/27/2011 |
| 20110250366 | BELL JAR FOR SIEMENS REACTOR INCLUDING THERMAL RADIATION SHIELD A bell jar for a Siemens reactor of the type used to deposit polycrystalline silicon on a plurality of heated silicon rods via chemical vapor deposition process. The bell jar includes a thermally conductive inner wall having an interior surface at least partially defini... | 10/13/2011 |
| 20110247556 | Tapered Horizontal Growth Chamber A system and techniques for performing deposition having a tapered horizontal growth chamber which includes a susceptor and a tapered channel flow block. A tapered chamber is formed between the susceptor and the tapered channel flow block. Gaseous species introduced are... | 10/13/2011 |
| 20110237076 | FILM-FORMING METHOD AND FILM-FORMING APPARATUS A film forming method includes arranging a target substrate to be processed in a chamber; supplying a processing gas including a chlorine containing gas through a supply path to the chamber in which the target substrate is arranged; and arranging a Ti containing unit in... | 09/29/2011 |
| 20110237051 | PROCESS AND APPARATUS FOR DEPOSITION OF MULTICOMPONENT SEMICONDUCTOR LAYERS A deposition process involves the formation of multicomponent semiconductor layers, in particular III-V epitaxial layers, on a substrate. Due to pyrolytic decomposition inside the reaction chamber, one of the process gases forms a first decomposition product. Together w... | 09/29/2011 |
| 20110230006 | Large Scale MOCVD System for Thin Film Photovoltaic Devices An apparatus for fabricating thin films on substrate panels includes a deposition chamber enclosed by sidewalls, a lid, and a base. The apparatus includes a mixing chamber disposed above the lid and configured to receive vapor species and form a mixed vapor. The mixing ... | 09/22/2011 |
| 20110217469 | Methods and Systems of Transferring, Docking and Processing Substrates In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail p... | 09/08/2011 |
