Celebrity Inventors
Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Application No. | Application Title | Issue Date |
| 20120128896 | STAIN-RESISTANT CONTAINER AND METHOD Stain resistant containers can be prepared in a three step process involving treatment with a nitrogen gas plasma, depositing a plasma enhanced chemical vapor deposition (PECVD) organosilicon thin film onto the interior surface of the container, followed by treatment wi... | 05/24/2012 |
| 20120125259 | ION IMPLANT SYSTEM HAVING GRID ASSEMBLY An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the f... | 05/24/2012 |
| 20120128892 | SURFACE PROCESSING METHOD AND SURFACE PROCESSING APPARATUS A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluste... | 05/24/2012 |
| 20120125891 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber... | 05/24/2012 |
| 20120104243 | Silver and Silver Nanoparticle MALDI Matrix Utilizing Online Soft Landing Ion Mobillity Silver nanoparticles as a sample matrix for Matrix Assisted Laser Desorption Ionization (MALDI) along with a novel method for nanoparticle development is described herein. The silver nanoparticles were generated from silver ions on the surface of a MALDI plate utilizing... | 05/03/2012 |
| 20120107524 | THIN-FILM MANUFACTURING METHOD AND APPARATUS A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus inclu... | 05/03/2012 |
| 20120103258 | Chemical Vapor Deposition Apparatus and Cooling Block Thereof The present invention provides a chemical vapor deposition apparatus and a cooling block thereof. The chemical vapor deposition apparatus comprises a process chamber; at least one clean gas channel connected between the process chamber and a remote plasma source; and an... | 05/03/2012 |
| 20120103259 | THIN FILM DEPOSITING APPARATUS Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a process chamber including at least one sputter gun inducing a first plasma on a film or a flat plate; a loading unit provided at one side of the process chamber and including fi... | 05/03/2012 |
| 20120108002 | APPARATUS, METHOD AND SYSTEM FOR DEPOSITING LAYER OF SOLAR CELL The apparatus for thin film deposition for solar cells includes multiple unit chambers divided by a substrate as a boundary, a deposition gas injecting unit injecting deposition gases independently to each of the multiple unit chambers, and a decomposition unit in each ... | 05/03/2012 |
| 20120107501 | COATING DEVICE AND COATING METHOD A coating installation containing at least one recipient which can be evacuated and which is provided to receive a substrate, at least one gas supply device which can introduce at least one gaseous precursor into the recipient, and at least one activation device which c... | 05/03/2012 |
| 20120080407 | Multi-Source Plasma Focused Ion Beam System The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductivel... | 04/05/2012 |
| 20120070963 | PLASMA DEPOSITION An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitro... | 03/22/2012 |
| 20120070589 | CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target... | 03/22/2012 |
| 20120048197 | FILM DEPOSITION DEVICE A film deposition device includes a conveyor of a strip of substrate in a conveying direction, a film deposition electrode disposed so as to face the substrate, a counter electrode disposed at an opposite side of the film deposition electrode, gas supplier of film depos... | 03/01/2012 |
| 20120052658 | QUANTUM DOT FORMING METHOD, STORAGE MEDIUM STORING A PROGRAM AND SUBSTRATE PROCESSING APPARATUS FOR EXECUTION OF THE METHOD A quantum dot forming method for forming quantum dots on a surface of a substrate includes exciting a substrate surface with a laser beam having a standing wave which is irradiated from one side of the substrate along the surface of the substrate to excite the surface o... | 03/01/2012 |
| 20120045590 | APPARATUS AND METHOD FOR PLASMA TREATMENT OF CONTAINERS An apparatus (9) for plasma treating multiple containers. The apparatus includes a manifold (2) comprising at least a first chamber with multiple outlet openings and multiple hollow, electrically-conductive nozzles (10) for at least one of deliverin... | 02/23/2012 |
| 20120045588 | DEPOSITION SYSTEM WITH A ROTATING DRUM A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least on... | 02/23/2012 |
| 20120045591 | PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from t... | 02/23/2012 |
| 20120045863 | MICROPLASMA GENERATOR AND METHODS THEREFOR A low-temperature, atmospheric-pressure microplasma generator comprises at least one strip of metal on a dielectric substrate. A first end of the strip is connected to a ground plane and the second end of the strip is adjacent to a grounded electrode, with a gap being d... | 02/23/2012 |
| 20120040112 | COATING OF HYDROXYLATED SURFACES BY GAS PHASE GRAFTING A method of coating hydroxylated surfaces by gas phase grafting is described. Especially acyl groups, silyl groups and/or alkyl groups are located on the surface of materials by gas phase grafting. The grafting method is a dry process. The material to coat can be organi... | 02/16/2012 |
| 20120031335 | VERTICAL INLINE CVD SYSTEM The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the process... | 02/09/2012 |
| 20120031337 | DIVIDED ANNULAR RIB TYPE PLASMA PROCESSING APPARATUS A plasma stream-derived deposited matter formed on an annular rib for droplet capture in a plasma processing apparatus is prevented from falling into a plasma generation portion and causing a short circuit. The annular rib for the droplet capture is divided into multipl... | 02/09/2012 |
| 20120034750 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PLASMA DOPING APPARATUS After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least s... | 02/09/2012 |
| 20120031336 | CHEMICAL VAPOR DEPOSITION DEVICE A chemical vapor deposition device includes a chamber, a gas input assembly, a gas output assembly, a heating device, and a driving module. The chamber includes a first side, a second side and a deposition area defined between the first side and the second side. The sec... | 02/09/2012 |
| 20120023684 | DYEING METHOD AND DYE DEPOSITION APPARATUS A dyeing method of dyeing an object to be dyed comprise: a first step of placing a sublimable dye and the object to face each other apart at a predetermined distance under normal pressure and heating the sublimable dye to sublimate the sublimable dye toward the object, ... | 02/02/2012 |
| 20120024230 | APPARATUSES AND SYSTEMS FOR FABRICATING THREE DIMENSIONAL INTEGRATED CIRCUITS The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One or more embodiments of systems, apparatuses, and/or methods according to the present invention are presented.... | 02/02/2012 |
| 20120027953 | Rotating Reactor Assembly for Depositing Film on Substrate A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. ... | 02/02/2012 |
| 20120024449 | PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in cham... | 02/02/2012 |
| 20120021132 | Method of Fabricating Thin Film by Microplasma Processing and Apparatus for Same Provided is a method of fabricating, with satisfactory adhesion, a thin film of a metal or a metallic-compound, such as a metal oxide or nitride, on a substrate made of a high-melting-point material such as silicon or ceramics by using a metal or metallic-compound targe... | 01/26/2012 |
| 20120021136 | SYSTEM AND METHOD FOR CONTROLLING PLASMA DEPOSITION UNIFORMITY A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at res... | 01/26/2012 |
| 20120021128 | SUBSTRATE TRANSPORT MECHANISM CONTACTING A SINGLE SIDE OF A FLEXIBLE WEB SUBSTRATE FOR ROLL-TO-ROLL THIN FILM DEPOSITION Systems and methods for depositing a thin film on a flexible substrate involve guiding the flexible substrate along a spiral transport path back and forth between spaced-apart first and second precursor zones so that the substrate transits through the first and second p... | 01/26/2012 |
| 20120021561 | PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SOLAR CELL USING SAME A method of manufacturing a solar cell in which qualities and thicknesses of formed films are uniformed is obtained. This method of manufacturing a solar cell includes steps of forming a substrate-side electrode (11) on a substrate (10), forming at least p... | 01/26/2012 |
| 20120012253 | PLASMA SHIELD FOR ELECTRODE Provided is a plasma shield for an electrode capable of preventing generation of particles by providing plasma shields at inner and outer diameter sides of an adhesive formed of elastomer for attaching a gas injection plate to an injection plate support member to protec... | 01/19/2012 |
| 20120015507 | PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD A plasma doping apparatus for adding an impurity to a semiconductor substrate includes a chamber, a gas supply unit configured for supplying gas to the chamber, and a plasma source by which to cause the chamber to generate plasma of the supplied gas. The mixed gas conta... | 01/19/2012 |
| 20120006267 | APPARATUS FOR PROCESSING COATING MATERIAL AND EVAPORATION DEPOSITION DEVICE HAVING SAME An apparatus for processing coating material includes a crucible having a cylindrical receptacle for receiving coating material, a drive member having a drive shaft, and a cover coupled to the drive shaft. The cover has a flat surface. The drive shaft is configured to d... | 01/12/2012 |
| 20120006489 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Substrates are contained in substrate containing holes which penetrate a tray in the thickness direction. A dielectric plate in a chamber is provided with a tray supporting surface which supports the lower surface of the tray and substrate placing sections which protrud... | 01/12/2012 |
| 20120003836 | MOVABLE GROUND RING FOR A PLASMA PROCESSING CHAMBER A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasm... | 01/05/2012 |
| 20120000424 | COOLED DARK SPACE SHIELD FOR MULTI-CATHODE DESIGN A cooled dark space shield for a multi-cathode, large area PVD apparatus is disclosed. For multi-cathode systems, a dark space shield between adjacent cathodes/targets may be beneficial. The shields may be grounded and provide a path to ground for electrons present with... | 01/05/2012 |
| 20120000421 | CONTROL APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION OF A DIELECTRIC SUBSTRATE A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of ... | 01/05/2012 |
| 20120000606 | PLASMA UNIFORMITY SYSTEM AND METHOD A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality of electrodes disposed within the chamber. Each of the electrodes configur... | 01/05/2012 |
