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| Application No. | Application Title | Issue Date |
| 20120125258 | Extended Reactor Assembly with Multiple Sections for Performing Atomic Layer Deposition on Large Substrate An elongated reactor assembly in a deposition device for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors and/or radical reactors. Each injector or radical reactor injects a gas or radicals onto... | 05/24/2012 |
| 20120083101 | SYSTEMS AND METHODS FOR FORMING SEMICONDUCTOR MATERIALS BY ATOMIC LAYER DEPOSITION Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to... | 04/05/2012 |
| 20120083060 | INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS The integration of cluster metal-organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) reactors with other process chambers is described. For example, a method of fabricating a light-emitting diode (LED) structure described herein includes for... | 04/05/2012 |
| 20120067284 | APPARATUS An apparatus for carrying out atomic layer deposition onto a surface of a substrate by exposing the surface of the substrate to alternate starting material surface reactions, the apparatus including two or more low-pressure chambers, two or more separate reaction chambe... | 03/22/2012 |
| 20120067521 | VACUUM PROCESSING SYSTEM A vacuum processing system including a cassette holder for setting up cassettes in which samples are stored, an air-transfer chamber for transferring the samples, lock chambers for storing the samples transferred from the air-transfer chamber, the lock chambers being ca... | 03/22/2012 |
| 20120071003 | Vacuum Processing Apparatus, Vacuum Processing Method, and Micro-Machining Apparatus Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged fro... | 03/22/2012 |
| 20120070590 | PLASMA ENHANCED ATOMIC LAYER DEPOSITION APPARATUS AND THE CONTROLLING METHOD THEREOF This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reacti... | 03/22/2012 |
| 20120045864 | MULTILAYER FILM FORMATION METHOD AND FILM DEPOSITION APPARATUS USED WITH THE METHOD A multilayer film formation method and film deposition apparatus that suppress fluctuations in thickness, stabilize product quality, and reduce costs. The method employs gas-phase chemical reaction to form a multilayer film having at least three layers using raw materia... | 02/23/2012 |
| 20120043198 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD There have been cases where transistors using oxide semiconductors are inferior in reliability to transistors using amorphous silicon. There have also been cases where transistors using oxide semiconductors show great variation in electrical characteristics within one s... | 02/23/2012 |
| 20120043024 | SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD There is provided a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor which is disposed in the chamber and on which the substrate is held; a shower head which is provided to face the susceptor with a ... | 02/23/2012 |
| 20120031333 | VERTICAL INLINE CVD SYSTEM The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the process... | 02/09/2012 |
| 20120034733 | SYSTEM AND METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also... | 02/09/2012 |
| 20120034731 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD A photoelectric conversion device manufacturing system in which a photoelectric conversion device is manufactured, the photoelectric conversion device including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer which are sequ... | 02/09/2012 |
| 20120034750 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PLASMA DOPING APPARATUS After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least s... | 02/09/2012 |
| 20120028390 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE WITH THE SAME A thin film deposition apparatus that may prevent a patterning slit sheet from sagging and increase a tensile force of the patterning slit sheet, and a method of manufacturing an organic light-emitting display device using the same.... | 02/02/2012 |
| 20120028437 | TRENCH-FILLING METHOD AND FILM-FORMING SYSTEM A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the sem... | 02/02/2012 |
| 20120024228 | APPARATUS FOR FORMING THIN FILM A thin film forming apparatus according to the embodiment includes a plurality of vapor deposition sources respectively separated from each other, a plurality of nozzle bodies connected to upper portions of the respective vapor deposition sources, and a plurality of noz... | 02/02/2012 |
| 20120017973 | IN-LINE DEPOSITION SYSTEM A deposition system includes a load lock chamber for receiving a substrate and exposing a substrate to a load lock temperature and load lock pressure suitable to prepare a substrate for subsequent low-pressure and high-temperature processing or for ambient temperature a... | 01/26/2012 |
| 20120021252 | Treating Surface of Substrate Using Inert Gas Plasma in Atomic Layer Deposition Depositing one or more layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition of layers. The radicals of the inert gas appear to ch... | 01/26/2012 |
| 20120017831 | CHEMICAL VAPOR DEPOSITION METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICES A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line d... | 01/26/2012 |
| 20120009728 | Apparatus and Method for Manufacturing CIGS Solar Cells An apparatus and a method for manufacturing a CIGS solar cell are disclosed. The apparatus includes a buffer chamber, a first chamber, a second chamber and a mechanical device. The first chamber and the second chamber are located adjacent to the buffer chamber respectiv... | 01/12/2012 |
| 20120006265 | ATOMIC LAYER DEPOSITION APPARATUS A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber bo... | 01/12/2012 |
| 20120009765 | COMPARTMENTALIZED CHAMBER Embodiments of the present invention generally relate to apparatus for improving processing uniformity and reducing needs of chamber cleaning. Particularly, embodiments of the present invention relate to a processing chamber having a loading compartment and a processing... | 01/12/2012 |
| 20120006266 | SPUTTERING APPARATUS, METHOD OF OPERATING THE SAME, AND METHOD OF MANUFACTURING SUBSTRATE USING THE SAME A sputtering apparatus includes a susceptor for receiving a substrate, and a first target device disposed to be opposite to a center region of a substrate and at least second and third target devices disposed to be opposite to peripheral regions of the substrate, wherei... | 01/12/2012 |
| 20120000423 | HDP-CVD SYSTEM An HDP-CVD system is described, including an HDP-CVD chamber for depositing a material on a wafer, and a pre-heating chamber disposed outside of the HDP-CVD chamber to pre-heat the wafer, before the wafer is loaded in the HDP-CVD chamber, to a temperature higher than ro... | 01/05/2012 |
| 20110318503 | PLASMA ENHANCED MATERIALS DEPOSITION SYSTEM A system and method for combined material deposition and plasma and/or controlled atmosphere treatment processing of substrates. In one variation, plasma and/or controlled atmosphere treatment and deposition are performed using a single processing system with multiple p... | 12/29/2011 |
| 20110308458 | Thin Film Deposition Apparatus Provided is a thin film deposition apparatus. The thin film deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head in... | 12/22/2011 |
| 20110312187 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD OF MANUFACTURING APPARATUS FOR SEMICONDUCTOR A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interio... | 12/22/2011 |
| 20110312189 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD A substrate treating apparatus is provided. The substrate treating apparatus includes a loading/unloading unit, a process unit in which a substrate treating process is performed, a loadlock unit disposed between the loading/unloading unit and the process unit, and a car... | 12/22/2011 |
| 20110309050 | PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD AND METHOD OF MANUFACTURING ELEMENT INCLUDING SUBSTRATE TO BE PROCESSED The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an emb... | 12/22/2011 |
| 20110308457 | APPARATUS AND METHOD FOR TREATING AN OBJECT The invention relates to an apparatus for treating an object using a plasma process. The apparatus comprises a plasma reactor including a metal cylinder covered by a dielectric layer. Further, the apparatus comprises an electrode structure arranged radially outside the ... | 12/22/2011 |
| 20110308456 | COATING APPARATUS A coating apparatus for coating a number of workpieces includes a deposition chamber, a reaction assembly, and a driving assembly. The deposition chamber includes a housing defining a cavity. The reaction assembly is received in the deposition chamber and includes an ou... | 12/22/2011 |
| 20110303150 | TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (... | 12/15/2011 |
| 20110305836 | ATOMIC LAYER DEPOSITION APPARATUS AND THIN FILM FORMING METHOD An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being c... | 12/15/2011 |
| 20110303149 | TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (... | 12/15/2011 |
| 20110303151 | TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (... | 12/15/2011 |
| 20110305833 | APPARATUS FOR TREATING AND/OR COATING THE SURFACE OF A SUBSTRATE COMPONENT Apparatus for treating and/or coating the surface of substrate components by deposition from the gas phase. A plurality of substrate carriers and a plurality of coating and/or treating units are arranged in a deposition or treatment chamber which can be evacuated. The s... | 12/15/2011 |
| 20110303148 | FULL-ENCLOSURE, CONTROLLED-FLOW MINI-ENVIRONMENT FOR THIN FILM CHAMBERS An enclosure for generating a secondary environment within a processing chamber for coating a substrate. An enclosure wall forms a secondary environment encompassing the coating source, plasma, and the substrate, and separating them from interior of the processing chamb... | 12/15/2011 |
| 20110290175 | Multi-Chamber CVD Processing System A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carrie... | 12/01/2011 |
| 20110281038 | Production Apparatus and Method of producing a Light-Emitting Device by Using the Same Apparatus The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle... | 11/17/2011 |
