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| Application No. | Application Title | Issue Date |
| 20120024222 | SUBSTRATE TEMPERATURE ACCURACY AND TEMPERATURE CONTROL FLEXIBILITY IN A MOLECULAR BEAM EPITAXY SYSTEM A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for the MBE deposition process on the MBE growth structure; and a control co... | 02/02/2012 |
| 20110300323 | PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET AND MONOCRYSTALLINE SIC SUBSTRATE WITH HOMOGENEOUS RESISTANCE DISTRIBUTION A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows... | 12/08/2011 |
| 20100024719 | TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a ... | 02/04/2010 |
| 20080295764 | Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for the MBE deposition process on the MBE growth structure; and a control co... | 12/04/2008 |
| 20080236477 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in... | 10/02/2008 |
| 20080213543 | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapour phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the ... | 09/04/2008 |
| 20080210157 | Systems and methods for forming strontium-and/or barium-containing layers A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition pro... | 09/04/2008 |
| 20080134961 | SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of de... | 06/12/2008 |
| 20080022925 | Method for marking a crystalline material using cathodoluminescence In a first exemplary embodiment of the present invention, a method is provided for marking a sample of a doped crystalline material. According to a feature of the present invention, the method comprises the steps of causing a controlled alteration to the crystalline mat... | 01/31/2008 |
| 20080000414 | SIMULTANEOUS IRRADIATION OF A SUBSTRATE BY MULTIPLE RADIATION SOURCES A method for configuring J electromagnetic radiation sources (J≧2) to simultaneously irradiate a substrate. Each source has a different function of wavelength and angular distribution of emitted radiation. The substrate includes a base layer and I stacks (I≧2) there... | 01/03/2008 |
| 20070240633 | One hundred millimeter single crystal silicon carbide wafer A method of producing a high quality bulk single crystal of silicon carbide in a seeded growth system is disclosed. The method includes positioning the seed crystal in a crucible while exerting minimal torsional forces on the seed crystal to thereby prevent torsional fo... | 10/18/2007 |
| 20070240630 | One hundred millimeter single crystal silicon carbide water A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the se... | 10/18/2007 |
| 20070240631 | Epitaxial growth of compound nitride semiconductor structures Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The s... | 10/18/2007 |
| 20070234947 | Nanoscale control of the spatial distribution, shape and size of thin films of conjugated organic molecules through the production of silicon oxide nanostructures The invention relates to a method of controlling the spatial distribution, shape and size of films of conjugated organic molecules. The inventive method can be used to grow single layers of organic molecules on silicon oxide nanostructures. The silicon oxide nanostructu... | 10/11/2007 |
| 20070012240 | Light emitting diode with at least two light emitting zones and method for manufacture A light emitting diode includes a first light emitting zone and a second light emitting zone. A defect propagation confinement mechanism is disposed in relation to the first light emitting zone and the second light emitting zone. The defect propagation confinement mecha... | 01/18/2007 |
| 20070006799 | Silicon wafer support fixture with roughended surface A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposit... | 01/11/2007 |
| 20070006798 | Systems and methods for forming strontium-and/or barium-containing layers A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition pro... | 01/11/2007 |
| 20060260537 | Wet pet food products and method for preparation The wet pet food product of the present invention provides a pet food that is attractive in appearance, provides improved texture, conceals odor and enables softness to a pet food product. The wet pet food product contains an edible component containing a textured mater... | 11/23/2006 |
| 20060213429 | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and fac... | 09/28/2006 |
| 20060130744 | Pulsed mass flow delivery system and method A system for delivering pulses of a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber. A controller is programmed to receive the desired mass for each pulse through an input inte... | 06/22/2006 |
| 20050115492 | Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition A method and the apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition can process many epitaxy reactions of the organic light-emitting diodes at the same time. More, the different types of epitaxy layers can individual rea... | 06/02/2005 |
| 20050028728 | Method for fabricating a diamond film having low surface roughness A process for making a diamond film with low surface roughness. A substrate is provided. A diamond layer is deposited on the substrate. A binder layer is coated over the diamond layer. A carrier plate is provided to join with the binder layer, thereby forming a laminate... | 02/10/2005 |
