Bizarre Patents
A vest or belt is integrally formed with tubular, pet receiving passageways which extend around the wearer's body and terminate in pocket-like chambers for feeding and retrieval.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8178585 | Solvent-free synthesis of soluble nanocrystals Methods for preparing high quality and high yields of nanocrystals, i.e., metal-oxide-based nanocrystals, using a novel solvent-free method. The nanocrystals advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents. | 05/15/2012 |
| 8153434 | Fluid storage and dispensing vessels having colorimetrically verifiable leak-tightness and method of making same A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character,... | 04/10/2012 |
| 8114220 | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and o... | 02/14/2012 |
| 8062965 | Isotopically-enriched boron-containing compounds, and methods of making and using same An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentrat... | 11/22/2011 |
| 8058219 | Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least ... | 11/15/2011 |
| 8026200 | Low pH mixtures for the removal of high density implanted resist A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively ... | 09/27/2011 |
| 8003391 | Fluid storage and dispensing vessels having colorimetrically verifiable leak-tightness, and method of making same A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character,... | 08/23/2011 |
| 8002880 | Gas storage and dispensing system with monolithic carbon adsorbent A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at... | 08/23/2011 |
| 7994108 | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one al... | 08/09/2011 |
| 7556972 | Detection and characterization of SiCOH-based dielectric materials during device fabrication Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically analyzing a fluid stream generated during a process employed for devi... | 07/07/2009 |
| 7542136 | Flipping stage arrangement for reduced wafer contamination cross section and improved measurement accuracy and throughput A sample stage for performing measurements using an optical metrology system includes at least one sample section for retention of a sample, and components for controlling orientation of the sample section with relation to the optical metrology system. A method and ... | 06/02/2009 |
| 7515502 | Memory array peripheral structures and use A method for using photolithographic dummy memory cells arranged in rings around a set of primary memory cells as test structures and as redundant memory cells. Also circuits and structures of memory arrays having multiple-use dummy memory cells. ... | 04/07/2009 |
| 7493186 | Method and algorithm for the control of critical dimensions in a thermal flow process A method of controlling one or more critical dimension (CD) features, dependent upon at least a first and a second processing parameter, with a single metrology step, while still enabling decoupled feedback to the first and the second processing parameter, includes ... | 02/17/2009 |
| 7446859 | Apparatus and method for reducing contamination in immersion lithography An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly having a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. The wafer chuck has a gap therein, the gap located adjacent an outer edge of ... | 11/04/2008 |
| 7436169 | Mechanical stress characterization in semiconductor device Methods of characterizing a mechanical stress level in a stressed layer of a transistor and a mechanical stress characterizing test structure are disclosed. In one embodiment, the test structure includes a first test transistor including a first stress level; and at... | 10/14/2008 |
| 7416986 | Test structure and method for detecting via contact shorting in shallow trench isolation regions A test structure for detecting void formation in semiconductor device layers includes a plurality of active device areas formed in a substrate, a plurality of shallow trench isolation (STI) regions separating the active device areas, a plurality of gate electrode st... | 08/26/2008 |
