Withrow & Terranova, P.L.L.C. - US Patent Attorneys and Agents

Attorney: Withrow & Terranova, P.L.L.C.

Number of patents: 183
Last date: May 10, 2011

Number	Title	Issue Date
7941105	Reflection cancellation circuit for a radio frequency power amplifier The present invention is an RF cancellation circuit located between the output of a power amplifier and downstream circuitry, such as a transmitting antenna. The RF cancellation circuit cancels reflections resulting from antenna impedance mismatches, thereby present...	05/10/2011
7932784	Frequency and phase locked loop synthesizer The present invention is a frequency and phase locked loop (FPLL) synthesizer having a frequency-locked loop (FLL) operating mode and a phase-locked loop (PLL) operating mode. The FLL operating mode is used for rapid coarse tuning of the FPLL synthesizer and is foll...	04/26/2011
7929263	Unlatch feature for latching ESD protection circuit The present invention is a latching electrostatic discharge (ESD) protection circuit that enables and latches an ESD clamping circuit upon an ESD event, and disables and un-latches the ESD clamping circuit upon either a drop in the DC supply voltage below a defined ...	04/19/2011
7928712	Low noise fast dithering switching power supply The present invention is a switching power supply that switches (dithers) between at least two switching frequencies without introducing a ripple signal at the dithering frequency, which is based on the time duration of a dithering cycle. In one embodiment of the pr...	04/19/2011
7920409	SRAM cell with intrinsically high stability and low leakage A Static Random Access Memory (SRAM) cell having high stability and low leakage is provided. The SRAM cell includes a pair of cross-coupled inverters providing differential storage of a data bit. Power to the SRAM cell is provided by a read word line (RWL) signal, w...	04/05/2011
7915706	Linearity improvements of semiconductor substrate using passivation The present invention relates to using a potentially trap-rich layer, such as a polycrystalline Silicon layer, over a passivation region of a semiconductor substrate or a Silicon-on-insulator (SOI) device layer to substantially immobilize a surface conduction layer ...	03/29/2011
7911234	Nanotube logic circuits A logic cell that is immune to misaligned carbon nanotubes. Carbon nanotubes are positioned on a substrate. Contacts are formed on a layer of carbon nanotubes, including a first input contact, a second input contact, an output contact, a first gate region, and a sec...	03/22/2011
7908131	Method for parameterized model order reduction of integrated circuit interconnects The present invention is a method and apparatus for creating a reduced-order IC interconnect model, which incorporates variations in interconnect process parameters, and models both on-chip and off-chip interconnects. The method is based on mathematically representi...	03/15/2011
7899937	Programmed I/O ethernet adapter with early interrupts for accelerating data transfer In a Local Area Network (LAN) system, an ethernet adapter exchanges data with a host through programmed I/O (PIO) and FIFO buffers. The receive PIO employs a DMA ring buffer backup so incoming packets can be copied directly into host memory when the PIO FIFO buffer ...	03/01/2011
7898343	Frequency-locked loop calibration of a phase-locked loop gain The present invention relates to a calibrated phase-locked loop (PLL), which has a calibration mode for measuring a tuning gain of a variable frequency oscillator (VFO) and a PLL mode for normal operation. Calibration information based on the tuning gain is used dur...	03/01/2011
7898158	MEMS vibrating structure using a single-crystal piezoelectric thin-film layer having domain inversions The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristic...	03/01/2011
7892974	Method of forming vias in silicon carbide and resulting devices and circuits A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon...	02/22/2011
7889123	Global positioning system (GPS) assembly test using wireless transmission A GPS assembly test system and method for a wireless communications device, such as a mobile telephone, having an integrated GPS receiver. The GPS assembly test can be performed without the requirement of external testing equipment. The GPS assembly test activates t...	02/15/2011
7881679	Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver A phase locked loop and power amplifier are integrated on single chip. To eliminate cross-talk between the components, a frequency translation block is introduced to change the output frequency of the PLL. To isolate the components from unwanted feedback, a high iso...	02/01/2011
7881029	Depletion-mode field effect transistor based electrostatic discharge protection circuit The present invention relates to an electrostatic discharge (ESD) clamp circuit that is used to protect other circuitry from high voltage ESD events. The ESD clamp circuit may include a field effect transistor (FET) element as a clamping element, which is triggered ...	02/01/2011
7880198	Field effect transistor having multiple pinch off voltages A compound field effect transistor having multiple pinch-off voltages comprising: first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrica...	02/01/2011
7877060	Fast calibration of AM/PM pre-distortion A system and method are provided for calibrating Amplitude Modulation to Phase Modulation (AM/PM) pre-distortion in a transmitter operating according to a polar modulation scheme. In general, phase modulation is disabled during transmission of an actual polar modula...	01/25/2011
7875545	Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with sil...	01/25/2011
7875537	High temperature ion implantation of nitride based HEMTs A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted produce an improved ohmic contact between the layer and contact metals, w...	01/25/2011
7868710	Digitally-controlled crystal oscillator circuit The present invention relates to a digitally-controlled crystal oscillator (DCXO) circuit having control circuitry, an active core, and a pair of thermometer-coded switched-capacitor circuits (TCSCCs), each of which is coupled to the active core and to a crystal. Th...	01/11/2011
7868419	Linearity improvements of semiconductor substrate based radio frequency devices The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies...	01/11/2011
7868403	Integrated MEMS resonator device The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide sem...	01/11/2011
7864491	Pilot switch Pilot switch circuitry coupled across first and second terminals of a microelectromechanical system (MEMS) switch is provided to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch...	01/04/2011
7863624	Silicon carbide on diamond substrates and related devices and methods A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal co...	01/04/2011
7863071	Combined micro-electro-mechanical systems device and integrated circuit on a silicon-on-insulator wafer The present invention includes a fabrication method to construct a combined MEMS device and IC on a silicon-on-insulator (SOI) wafer (MEMS-IC) using standard foundry IC processing techniques. The invention also includes the resulting MEMS-IC. Deposition layers are a...	01/04/2011
7862859	Method of correcting for pattern run out A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps of providing a test substrate; providing a stencil of known thickness on the test substrate;...	01/04/2011
7860066	Adaptive scheduling for multi-carrier systems A scheduler in a base station determines or estimates a cumulative throughput based on the scheduling criteria used by the base station. Based on the cumulative throughput for each slot, the mobile terminals are divided into one of two groups. The first group is pro...	12/28/2010
7859009	Integrated lateral high-voltage diode and thyristor The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology...	12/28/2010
7858460	Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and th...	12/28/2010
7855401	Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides An improved field effect transistor formed in the Group III nitride material system includes a two part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride. The spu...	12/21/2010
7852908	Combined digital filter and correlator The present invention is a combined digital filter and correlator, which is used in a radio frequency (RF) receiver, and takes advantage of common structures used in both digital filters and correlators. Specifically, a digital filter may mix (multiply) digital filt...	12/14/2010
7851830	Multigate Schottky diode A multigate Schottky diode comprising an electrically conducting active semiconductor region; first and second electrically connected metallic contact arms on the active semiconductor region forming ohmic contacts therewith; th...	12/14/2010
7849582	SAW architecture with series connected interdigitated transducers An acoustic cavity of a surface acoustic wave (SAW) architecture is defined on a piezoelectric substrate by two acoustic reflectors are formed on a piezoelectric substrate. The surface acoustic wave architecture may include at least one alpha interdigitated transduc...	12/14/2010
7840226	Apparatus and method of location based telecommunication authorization An apparatus and method directed to automated call screening, and specifically the utilization of location history of a call recipient to determine call authorization, are provided. In accordance with an exemplary embodiment, a computer readable medium embodied in a...	11/23/2010
7813446	AM to PM correction system for polar modulator A transmitter includes a polar modulator that creates phase and amplitude signals which in turn drive a power amplifier. To compensate for AM to PM conversion of the amplitude signal into the amplified signal, a compensation signal is generated from the amplitude si...	10/12/2010
7809349	Radio frequency filter using intermediate frequency impedance translation The present invention is an RF filter that translates impedances of an IF circuit to create a filter with an RF center frequency having the high Q roll-off characteristics of an IF filter. The RF filter is self-aligned with the frequency of an RF local oscillator. T...	10/05/2010
7801244	Am to AM correction system for polar modulator A transmitter includes a polar converter to generate an amplitude signal and a phase signal, which in turn is converted to a frequency signal. The amplitude signal is directed to a compensator and a compensation signal is generated. The compensation signal is combin...	09/21/2010
7795691	Semiconductor transistor with P type re-grown channel layer The invention is a device for controlling conduction across a semiconductor body with a P type channel layer between active semiconductor regions of the device and the controlling gate contact. The device, often a MOSFET or an IGBT, includes at least one source, wel...	09/14/2010
7795641	Diode assembly A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting channel layer on the semiconductor substrate...	09/14/2010
7790045	Formation of close-packed sphere arrays in V-shaped grooves The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped gro...	09/07/2010

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Attorney: Withrow & Terranova, P.L.L.C.