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Pneumatic Shoe Lacing Apparatus
This invention provides a pneumatic shoe lacing apparatus for the pneumatic lacing of shoe.
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| Number | Title | Issue Date |
| 7936043 | Integrated passive device substrates The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. Th... | 05/03/2011 |
| 7228029 | Short pulse lasers using large mode area fibers and higher order modes The specification describes an optical fiber device for propagating and recompressing high energy, ultrashort pulses with minimal distortions due to nonlinearity. The device is based on propagation in a higher order mode (HOM) of a few-moded fiber. Coupling into the... | 06/05/2007 |
| 6904217 | Method for the manufacture of optical fibers, improved optical fibers, and improved Raman fiber amplifier communication systems The specification describes an improved optical fiber design in which the criteria for high performance in a Raman amplified optical system, such as moderate effective area, moderate dispersion, low dispersion slope, and selected zero dispersion wavelength, are simu... | 06/07/2005 |
| 6885792 | Wavelength monitoring optical fibers using detection in the near field The specification describes a wavelength monitoring system for multiple wavelength communications systems, such as WDM systems, based on the recognition that the mechanism for spatially separating the individual wavelength bands can be achieved within the optical fi... | 04/26/2005 |
| 6727567 | Integrated circuit device substrates with selective epitaxial growth thickness compensation Integrated circuit devices are formed in a substrate wafer using selective epitaxial growth (SEG). Non-uniform epitaxial wafer thickness results when the distribution of SEG regions across the surface of the wafer is non-uniform, resulting in loading effects during ... | 04/27/2004 |
| 6678167 | High performance multi-chip IC package The specification describes a multi-chip IC package in which IC chips are flip-chip bonded to both sides of a flexible substrate. The upper (or lower) surface of the flexible substrate is bonded to a rigid support substrate with openings in the support su... | 01/13/2004 |
| 6442977 | Sol-gel process for fabricating germanium-doped silica article A sol-gel process for fabricating bulk, germanium-doped silica bodies useful for a variety of applications, including core rods, substrate tubes, immediate overcladding, pumped fiber lasers, and planar waveguides, is provided. The process involves the ste... | 09/03/2002 |
| 6103607 | Manufacture of MOSFET devices The specification describes a process for making gate electrodes for silicon MOS transistor devices. The gate electrode is a composite of a first layer of tungsten suicide, a second layer of tungsten silicide nitride, and a third layer of tungsten silicid... | 08/15/2000 |
