Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 8167684 | Chemical mechanical polishing slurry, its preparation method, and use for the same A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are s... | 05/01/2012 |
| 8162723 | Method of polishing a tungsten carbide surface The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surfac... | 04/24/2012 |
| 8157876 | Slurry composition containing non-ionic polymer and method for use A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic mono... | 04/17/2012 |
| 8138091 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the... | 03/20/2012 |
| 8101093 | Chemical-mechanical polishing composition and method for using the same The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50... | 01/24/2012 |
| 8075372 | Polishing pad with microporous regions The invention provides a polishing pad for chemical-mechanical polishing comprising a polymeric material comprising two or more adjacent regions, wherein the regions have the same polymer formulation and the transition between the regions does not include a structur... | 12/13/2011 |
| 8067352 | Aqueous cleaning composition for semiconductor copper processing The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05... | 11/29/2011 |
| 8063006 | Aqueous cleaning composition for semiconductor copper processing The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 t... | 11/22/2011 |
| 8062096 | Use of CMP for aluminum mirror and solar cell fabrication The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid c... | 11/22/2011 |
| 8057561 | Polyoxometalate compositions and methods The invention provides an isolated, particulate polyoxometalate complex comprising a water-soluble cationic polymer and a polyoxometalate compound ionically bound to the cationic polymer. The polyoxometalate compound can be an isopolyoxometalate compound, such as an... | 11/15/2011 |
| 8017524 | Stable, high rate silicon slurry The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing comp... | 09/13/2011 |
| 8008202 | Ruthenium CMP compositions and methods The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing ... | 08/30/2011 |
| 7998228 | Tantalum CMP compositions and methods A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises about 0.1 to about 10 percent by weight of a zirconia or fumed alumina abrasive, about 0.1 to about 10 percent by weight of an alkali metal iodate salt and an aqueous carrier. The comp... | 08/16/2011 |
| 7994057 | Polishing composition and method utilizing abrasive particles treated with an aminosilane The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound. ... | 08/09/2011 |
| D640057 | Polishing pad carrier | 06/21/2011 |
| 7955520 | Copper-passivating CMP compositions and methods The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the inve... | 06/07/2011 |
| 7955519 | Composition and method for planarizing surfaces The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 80% of the α-... | 06/07/2011 |
| 7922926 | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic aci... | 04/12/2011 |
| 7897061 | Compositions and methods for CMP of phase change alloys The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by ... | 03/01/2011 |
| 7888929 | Method and apparatus for measurement of magnetic permeability of a material A system for determining magnetic permeability of a material. Two electrical inductors formed as primary and secondary concentric coils share a common magnetic core space. A first AC voltage applied to the primary coil creates a magnetic flux in the core proportiona... | 02/15/2011 |
| 7846842 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned poli... | 12/07/2010 |
| 7875469 | Method of operating and process for fabricating an electron source A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod.... | 01/25/2011 |
| 7837888 | Composition and method for damascene CMP The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition co... | 11/23/2010 |
| 7820067 | Halide anions for metal removal rate control The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system. ... | 10/26/2010 |
| 7803711 | Low pH barrier slurry based on titanium dioxide The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure an... | 09/28/2010 |
| 7803203 | Compositions and methods for CMP of semiconductor materials The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate po... | 09/28/2010 |
| 7776230 | CMP system utilizing halogen adduct The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resul... | 08/17/2010 |
| 7754098 | Chemical-mechanical polishing composition and method for using the same The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, bar... | 07/13/2010 |
| 7732393 | Oxidation-stabilized CMP compositions and methods The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier t... | 06/08/2010 |
| 7699684 | CMP porous pad with component-filled pores This invention provides a method for polishing pad comprising a polymeric material having pores and a component that is disposed within the pores. ... | 04/20/2010 |
| 7686994 | Method of preparing a conductive film The invention provides a method for producing a conductive film that generates an electric current via field emission of electrons, which method comprises incorporating an electrically conductive material into a thermoplastic polymer. The invention also provides a c... | 03/30/2010 |
| 7585340 | Polishing composition containing polyether amine The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system. ... | 09/08/2009 |
| 7582127 | Polishing composition for a tungsten-containing substrate The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, co... | 09/01/2009 |
| 7542549 | X-ray source with nonparallel geometry An improved x-ray generation system produces a converging or diverging radiation pattern particularly suited for substantially cylindrical or spherical treatment devices. In an embodiment, the system comprises a closed or concave outer wall about a closed or concave... | 06/02/2009 |
| 7531105 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the... | 05/12/2009 |
| 7524347 | CMP composition comprising surfactant The invention provides a polishing composition comprising fumed alumina, alpha alumina, silica, a nonionic surfactant, a metal chelating organic acid, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate comp... | 04/28/2009 |
| 7504044 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned poli... | 03/17/2009 |
| 7501346 | Gallium and chromium ions for oxide rate enhancement The invention provides a chemical-mechanical polishing composition comprising silica, a compound in an amount sufficient to provide about 0.2 mM to about 10 mM of a metal cation selected from the group consisting of gallium (III), chromium (II), and chromium (III), ... | 03/10/2009 |
| 7497938 | Tribo-chronoamperometry as a tool for CMP application The invention provides a method of determining at least one electrochemical characteristic of a chemical-mechanical or electrochemical-mechanical polishing system comprising application of a potential between a polishing substrate and an electrode to generate a curr... | 03/03/2009 |
| 7456482 | Carbon nanotube-based electronic switch An improved microelectromechanical switch assembly comprises a linearly movable switch rod constrained via a switch bearing, the switch rod being actuated by electrostatic deflection. Movement of the switch rod to one end of its travel puts the switch assembly in a ... | 11/25/2008 |
