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A vest or belt is integrally formed with tubular, pet receiving passageways which extend around the wearer's body and terminate in pocket-like chambers for feeding and retrieval.
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| Number | Title | Issue Date |
| 6431367 | Method and apparatus for exchanging sifter frames of a plan sifter The invention provides a method for exchanging a plurality of sifter frames of a plan sifter. The steps of the method include a step, when taking out a number of sifter frames from a sifting chamber, of taking out a plurality of sifter frames in a unitary... | 08/13/2002 |
| 6406954 | Method for forming out-diffusing a dopant from the doped polysilicon into the N-type and P-type doped portion In one aspect, the invention includes a semiconductor processing method of diffusing dopant into both n-type and p-type doped regions of a semiconductive substrate. A semiconductive material is provided. The semiconductive material has a first portion and... | 06/18/2002 |
| 6385857 | Position detectors, methods of detecting position, and methods of providing positional detectors Position detectors, welding system position detectors, methods of detecting various positions, and methods of providing position detectors are described. In one embodiment, a welding system positional detector includes a base that is configured to engage ... | 05/14/2002 |
| 6382129 | Semiconductor wafer processor, plasma generating apparatus, magnetic field generator, and method of generating a magnetic field A semiconductor wafer processor includes a chamber having a wafer support. A magnetic field generator is configured to generate a magnetic field within the chamber at a location proximate a surface of a wafer received by the wafer support. The magnetic fi... | 05/07/2002 |
| 6365507 | Method of forming integrated circuitry In one implementation, a method of depositing a nitrogen enriched metal layer over a semiconductor substrate includes providing a sputter deposition reactor chamber having an inductive coil positioned therein, a metallic target position therein, and a sem... | 04/02/2002 |
| 6363633 | Excavating implement An excavating implement which includes a blade defining a top surface, an opposed bottom surface, a rear edge, a front edge, and opposed end surfaces. Primary cutting edges are spaced apart along the front edge, and secondary cutting edges positioned betw... | 04/02/2002 |
| 6362468 | Optical unit for detecting object and coordinate input apparatus using same An object detecting optical unit for detecting a direction or a position of an object placed on a detecting plane surface is disclosed. The optical unit detects existence or non existence of a retroreflective light reflected by a retroreflective member. A... | 03/26/2002 |
| 6362114 | Semiconductor processing methods of forming an oxynitride film on a silicon substrate A semiconductor processing method of forming an oxynitride film on a silicon substrate comprises placing a substrate in a reactor, the substrate having an exposed silicon surface, and combining nitrogen, oxygen, and fluorine in gaseous form in the reactor... | 03/26/2002 |
| 6358763 | Methods of forming a mask pattern and methods of forming a field emitter tip mask Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comp... | 03/19/2002 |
| 6352932 | Methods of forming integrated circuitry and integrated circuitry structures In one aspect, a plurality of layers are formed over a substrate and a series of first trenches are etched into a first of the layers in a first direction. A series of second trenches are etched into the first layer in a second direction which is differen... | 03/05/2002 |
| 6351038 | Integrated circuitry A semiconductor processing method of making electrical connection between an electrically conductive line and a node location includes, a) forming an electrically conductive line over a substrate, the substrate having an outwardly exposed silicon containi... | 02/26/2002 |
| 6350093 | Electrically insulated threaded fastener anchor An electrically insulated anchor device is described, comprising a rigid elongated metal sleeve including an external surface that leads from an open top end to a bottom end. A longitudinal internal bore is formed within the sleeve with a bore wall spaced... | 02/26/2002 |
| 6349902 | Wind sock with dihedral wings A windsock includes an elongated fuselage with outwardly extending dihedral wings. A dihedral spar extends along the wings and is joined with a coupling that is movably positioned within the fuselage cavity. A stabilizer is also mounted to the coupling an... | 02/26/2002 |
| 6350679 | Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry The invention comprises methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry. In one implementation, a method of providing an interlevel dielectric layer in... | 02/26/2002 |
| 6344418 | Methods of forming hemispherical grain polysilicon In one aspect, the invention encompasses a semiconductor processing method comprising contacting a surface with a liquid solution comprising at least one fluorine-containing species and a temperature of at least about 40° C. In another aspect, the invent... | 02/05/2002 |
| 6344364 | Etching methods In one aspect, the invention includes a method of etching, comprising: a) forming a material over a substrate, the material comprising a lower portion near the substrate and an upper portion above the lower portion; b) providing a quantity of detectable a... | 02/05/2002 |
| 6340994 | System and method for using temporal gamma and reverse super-resolution to process images for use in digital display systems An image processing system including a display output processor using Temporal Gamma Processing (TGP) and Reverse Super-resolution (RSR) techniques to process images. TGP assures that the time-related representation of an image is as accurate as possible,... | 01/22/2002 |
| 6337575 | Methods of testing integrated circuitry, methods of forming tester substrates, and circuitry testing substrates A method of testing integrated circuitry includes providing a substrate comprising integrated circuitry to be tested. The circuitry substrate to be tested has a plurality of exposed conductors in electrical connection with the integrated circuitry. In one... | 01/08/2002 |
| 6333556 | Insulating materials The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to fo... | 12/25/2001 |
| 6329453 | System for printing and detecting a photochromic phase change ink composition A photochromic phase change ink composition that contains (A) at least one selected polymeric and photochromic yellow phase change colorant and (B) a phase change ink carrier composition comprising (1) a resin selected from the group consisting of a ureth... | 12/11/2001 |
| 6320202 | Bottom-gated thin film transistors comprising germanium in a channel region A thin film transistor includes, a) a thin film source region; b) a thin film drain region; c) a polycrystalline thin film channel region intermediate the thin film source region and the thin film drain region; d) a transistor gate and gate dielectric ope... | 11/20/2001 |
| 6319779 | Semiconductor transistor devices and methods for forming semiconductor transistor devices The invention includes a method for forming graded junction regions comprising: a) providing a semiconductor material wafer; b) providing a transistor gate over the semiconductor material wafer, the transistor gate having opposing lateral sidewalls; c) pr... | 11/20/2001 |
| 6319813 | Semiconductor processing methods of forming integrated circuitry and integrated circuitry constructions Semiconductor processing methods of forming integrated circuitry, and in particular, methods of forming such circuitry utilizing dual damascene technology, and resultant integrated circuitry constructions are described. In one embodiment, a substrate is p... | 11/20/2001 |
| 6316312 | Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures Semiconductor capacitor constructions, DRAM cell constructions, methods of forming semiconductor capacitor constructions, methods of forming DRAM cell constructions, and integrated circuits incorporating capacitor structures and DRAM cell structures are e... | 11/13/2001 |
| 6309714 | Decorative submersible fish tank sculpture A decorative submersible sculpture is described in which a submersible hollow body is formed with a peripheral wall structure. The wall structure defines an internal receptacle of a prescribed decorative shape that is configured to be filled by a visually... | 10/30/2001 |
| 6309453 | Colorless compounds, solid inks, and printing methods The invention includes colorless compounds having a central core and at least two arms extending from the core. The core can comprise one or more atoms. The at least two arms have the formula ##STR1## In such formula, Z is a segment of one or more atoms; ... | 10/30/2001 |
| 6309973 | Semiconductor processing methods of forming a conductive projection and methods of increasing alignment tolerances Semiconductor processing methods of forming conductive projections and methods of increasing alignment tolerances are described. In one implementation, a conductive projection is formed over a substrate surface area and includes an upper surface and a sid... | 10/30/2001 |
| 6307226 | Contact openings to electronic components having recessed sidewall structures A method for forming a contact opening is described and which includes providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having a conductive top and sidewall s... | 10/23/2001 |
| 6306774 | Method of forming a wordline In one aspect, the invention encompasses a semiconductor processing method comprising contacting a surface with a liquid solution comprising at least one fluorine-containing species and a temperature of at least about 40° C. In another aspect, the invent... | 10/23/2001 |
| 6303515 | Method of forming a capacitor In one aspect, the invention encompasses a semiconductor processing method comprising contacting a surface with a liquid solution comprising at least one fluorine-containing species and a temperature of at least about 40° C. In another aspect, the invent... | 10/16/2001 |
| 6303488 | Semiconductor processing methods of forming openings to devices and substrates, exposing material from which photoresist cannot be substantially selectively removed In one aspect, the invention provides a method of exposing a material from which photoresist cannot be substantially selectively removed utilizing photoresist. In one preferred implementation, a first material from which photoresist cannot be substantiall... | 10/16/2001 |
| 6300187 | Capacitor and method of forming a capacitor The invention comprises capacitors and methods of forming capacitors. In one implementation, a method of forming a capacitor includes forming a first capacitor electrode. An Si3 N4 comprising capacitor dielectric layer is formed over... | 10/09/2001 |
| 6300219 | Method of forming trench isolation regions In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and then converted, at least some of the silanol, to a compou... | 10/09/2001 |
| 6297525 | Capacitor structures, DRAM cell structures, and integrated circuitry The invention encompasses DRAM constructions, capacitor constructions, integrated circuitry, and methods of forming DRAM constructions, integrated circuitry and capacitor constructions. The invention encompasses a method of forming a capacitor wherein: a)... | 10/02/2001 |
| 6297171 | Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3 N4 outwardly of the su... | 10/02/2001 |
| 6277759 | Plasma etching methods A plasma etching method includes forming a polymer comprising carbon and a halogen over at least some internal surfaces of a plasma etch chamber. After forming the polymer, plasma etching is conducted using a gas which is effective to etch polymer from ch... | 08/21/2001 |
| 6276996 | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad The invention comprises copper chemical-mechanical polishing processes using fixed abrasive polishing pads, and copper layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads. In one im... | 08/21/2001 |
| 6274498 | Methods of forming materials within openings, and method of forming isolation regions In one aspect, the invention includes a method of forming a material within an opening, comprising: a) forming an etch-stop layer over a substrate, the etch-stop layer having an opening extending therethrough to expose a portion of the underlying substrat... | 08/14/2001 |
| 6273786 | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad The invention comprises tungsten chemical-mechanical polishing processes using fixed abrasive polishing pads, and to tungsten layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads. In... | 08/14/2001 |
| 6271558 | Capacitors and capacitor construction A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing a first electrically conductive capacitor plate over the node, the capacitor plate comprising conductively doped polysi... | 08/07/2001 |
