Wells St. john P.S. - US Patent Attorneys and Agents

Attorney: Wells St. john P.S.

Number of patents: 26
Last date: May 19, 2009

Number	Title	Issue Date
7535695	DRAM cells and electronic systems The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium and nitrogen can be, for example, titanium nitride and/or boron-doped...	05/19/2009
7535112	Semiconductor constructions comprising multi-level patterns of radiation-imageable material The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pa...	05/19/2009
7534694	Methods of forming a plurality of capacitors The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a firs...	05/19/2009
7533484	Fishing pole, anti-wrap line guide for a fishing pole, and fishing rod A fishing pole is provided with a handle, a rod, and a closing segment. The rod has a base, a tip end, and a coil spring provided between the base and the tip end. The coil spring is configured to receive and guide a fishing line. The rod is supported by the handle ...	05/19/2009
7482239	Methods of forming integrated circuitry In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the opening over at least upper portions of sidewalls of the opening. The spaci...	01/27/2009
7478508	Mounting clip A mounting clip is described and which includes a clip body which has an aperture formed therein; and an engaging component is provided and which is received in the aperture and which moveably mounts the clip body to a first structural member and which facilitates t...	01/20/2009
7476588	Methods of forming NAND cell units with string gates of various widths Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and ...	01/13/2009
D584747	Lawn striping assembly cover	01/13/2009
7473645	Method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor substrate. In one implementation, a method of etching includes forming a m...	01/06/2009
7473615	Semiconductor processing methods The invention includes methods of forming oxide structures under corners of transistor gate stacks and adjacent trenched isolation regions. Such methods can include exposure of a semiconductor material to steam and H2, with the H2 being present...	01/06/2009
7473037	Optical fibre connector system An optical fibre connector system, including an optical connector disposed therein, and a recess allowing a through connector to be connected to the optical connector. The optical fiber connector system includes an engagement mechanism that acts on the optical conne...	01/06/2009
7473596	Methods of forming memory cells An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor dielectric between the first and second electrodes, and a vertical transistor above and including the first s...	01/06/2009
7470632	Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge A substrate is positioned within a deposition chamber. At least two gaseous precursors are fed to the chamber which collectively comprise silicon, an oxidizer comprising oxygen and dopant which become part of the deposited doped silicon dioxide. The feeding is over ...	12/30/2008
7470628	Etching methods Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good selectivity to both nitrides and field oxides. Integrated circuits produced...	12/30/2008
7470606	Masking methods The invention includes masking methods. In one implementation, a masking material which includes boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The masking material includes at least about 0.5 atomic percent boron. The mas...	12/30/2008
7470576	Methods of forming field effect transistor gate lines In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within t...	12/30/2008
7470635	Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, methods of forming trench isolation in the fabrication of integrated circuitry, methods of depositing silicon dioxide-comprising layers in the fabrication of integrated circuitry, and methods of forming bit line over capacitor arrays of memory cells This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over capacitor arrays of memory cells. In one implementation, a semicondu...	12/30/2008
7468104	Chemical vapor deposition apparatus and deposition method A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamb...	12/23/2008
7468108	Metal layer forming methods and capacitor electrode forming methods A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the precursor. The chemisorbed layer can be treated with an oxidant and the ...	12/23/2008
7465650	Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry This invention includes methods of forming plugs containing polysilicon, and methods of forming FLASH memory circuitry. In one implementation, a method of forming a plug containing polysilicon includes providing a substrate having an opening formed therein. Polysili...	12/16/2008
7465627	Methods of forming capacitors This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silico...	12/16/2008
7465616	Method of forming a field effect transistor In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within t...	12/16/2008
7465406	Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least som...	12/16/2008
7465982	Capacitor structures Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming metal-containing dielectric layers over a silicon-containing substrat...	12/16/2008
7446351	Transistor structures and transistors with a germanium-containing channel A transistor structure includes a first undoped, silicon-containing channel layer, a buried germanium channel, and a second undoped, silicon-containing channel layer. The first and second channel layers may contain SiGe or, alternatively, Si only. Another transistor...	11/04/2008
6524921	Methods of forming bipolar transistor constructions The invention includes a bipolar transistor construction having a collector region, emitter region, and base region extending within a semiconductive material substrate. The construction further comprises separate access regions associated with the base r...	02/25/2003

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Attorney: Wells St. john P.S.