Wells St. John P.S. - US Patent Attorneys and Agents

Attorney: Wells St. John P.S.

Number of patents: 2005
Last date: May 10, 2011

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Number	Title	Issue Date
7939877	DRAM unit cells, capacitors, methods of forming DRAM unit cells, and methods of forming capacitors Some embodiments include methods of forming capacitors. A first capacitor storage node may be formed within a first opening in a first sacrificial material. A second sacrificial material may be formed over the first capacitor storage node and over the first sacrific...	05/10/2011
7939409	Peripheral gate stacks and recessed array gates Methods are provided for simultaneously processing transistors in two different regions of an integrated circuit. Planar transistors are provided in a logic region while recessed access devices (RADs) are provided in an array region for a memory device. During gate ...	05/10/2011
7939403	Methods of forming a field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells A method of forming a field effect transistor includes forming trench isolation material within a semiconductor substrate and on opposing sides of a semiconductor material channel region along a length of the channel region. The trench isolation material is formed t...	05/10/2011
7935999	Memory device A memory device comprises an active area comprising a source and at least two drains defining a first axis. At least two substantially parallel word lines are defined by a first pitch, with one word line located between each drain and the source. Digit lines are def...	05/03/2011
7932174	Method of making a semiconductor device having improved contacts A semiconductor device and fabrication process wherein the device includes a conductive layer with a localized thick region positioned below the contact hole. In one embodiment of the invention, the thick region to which contact is made is formed by means of an open...	04/26/2011
7932173	Method of fabricating integrated circuitry The invention includes methods of fabricating integrated circuitry. In one implementation, at least two different elevation conductive metal lines are formed relative to a substrate. Then, interconnecting vias are formed in a common masking step between, a) respecti...	04/26/2011
7932003	Methods of forming and using reticles Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated wi...	04/26/2011
7931618	Apparatuses and methods for injecting medicines to a desired depth A reloadable medicine injector and methods are described in which a barrel with a receiving cavity is adapted to slidably receive a syringe subassembly for axial movement therein. Upon removal of a safety and release of a syringe driver, the syringe driver moves for...	04/26/2011
7930657	Methods of forming photomasks Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more ch...	04/19/2011
7928503	Memory cells Some embodiments include methods of forming memory cells. Dopant is implanted into a semiconductor substrate to form a pair of source/drain regions that are spaced from one another by a channel region. The dopant is annealed within the source/drain regions, and then...	04/19/2011
7927964	Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructions Some embodiments include methods of forming low k dielectric regions between electrically conductive lines. A construction may be formed to have a plurality of spaced apart electrically conductive lines, and to have sacrificial material between the electrically cond...	04/19/2011
7927303	Medicine injection devices and methods A reloadable medicine injector and methods are described in which a barrel with a receiving cavity is adapted to slidably receive a syringe subassembly for axial movement therein. Upon removal of a safety and release of a syringe driver, the syringe driver moves for...	04/19/2011
D636503	Roofing membrane seam plate	04/19/2011
7923322	Method of forming a capacitor A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric ...	04/12/2011
7923308	Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field eff...	04/12/2011
7923181	Methods of forming photomasks Some embodiments include methods of forming photomasks. A stack of at least three different materials is formed over a base. Regions of the stack are removed to leave a mask pattern over the base. The mask pattern includes a pair of spaced-apart adjacent segments of...	04/12/2011
7923070	Atomic layer deposition method of forming conductive metal nitride-comprising layers This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a d...	04/12/2011
7919863	Semiconductor constructions Some embodiments include methods of forming semiconductor constructions. Oxide is formed over a substrate, and first material is formed over the oxide. Second material is formed over the first material. The second material may be one or both of polycrystalline and a...	04/05/2011
7919386	Methods of forming pluralities of capacitors The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes within a capacitor array area over a substrate. The capacitor electrodes ...	04/05/2011
7915735	Selective metal deposition over dielectric layers Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow ...	03/29/2011
7915168	Semiconductor processing methods Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the ...	03/29/2011
7915126	Methods of forming non-volatile memory cells, and methods of forming NAND cell unit string gates Some embodiments include methods of utilizing polysilazane in forming non-volatile memory cells. The memory cells may be multi-level cells (MLCs). The polysilazane may be converted to silicon nitride, silicon dioxide, or silicon oxynitride with thermal processing an...	03/29/2011
7910971	Methods of forming vertical field effect transistors, vertical field effect transistors, and dram cells A method of forming a vertical field effect transistor includes etching an opening into semiconductor material. Sidewalls and radially outermost portions of the opening base are lined with masking material. A semiconductive material pillar is epitaxially grown to wi...	03/22/2011
7910660	Zwitterionic block copolymers and methods Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation. In some embodiments a zwitterionic block copolymer in...	03/22/2011
7910487	Reverse masking profile improvements in high aspect ratio etch A method of improving high aspect ratio etching by reverse masking to provide a more uniform mask height between the array and periphery is presented. A layer of amorphous carbon is deposited over a substrate. An inorganic hard mask is deposited on the amorphous car...	03/22/2011
7910270	Reticle constructions The invention includes reticle constructions and methods of forming reticle constructions. In a particular aspect, a method of forming a reticle includes provision of a reticle substrate having a defined main-field region and a defined boundary region. The substrate...	03/22/2011
7905642	Exhaust stack and road tractor exhaust pipe An exhaust stack is provided having an exhaust tube, an outer casing, a light, electrical wiring, and insulating material. The outer casing defines an interior in which the exhaust tube extends. The light is supported by the outer casing. The electrical wiring exten...	03/15/2011
7905352	Kits containing medicine injection devices and containers A reloadable medicine injector and methods are described in which a barrel with a receiving cavity is adapted to slidably receive a syringe subassembly for axial movement therein. Upon removal of a safety and release of a syringe driver, the syringe driver moves for...	03/15/2011
7902580	Assemblies comprising magnetic elements and magnetic barrier or shielding The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The fi...	03/08/2011
7902099	Dielectric layers and memory cells including metal-doped alumina A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process. ...	03/08/2011
7902084	Silicon dioxide deposition methods using at least ozone and TEOS as deposition precursors Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition method using at least ozone and TEOS as deposition precursors...	03/08/2011
7902081	Methods of etching polysilicon and methods of forming pluralities of capacitors A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, ...	03/08/2011
7902028	Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates The invention includes methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integr...	03/08/2011
7900370	Tape measure attachment apparatus An attachment apparatus is provided for a measuring tape having upwardly curving side edges, a downwardly, substantially perpendicular tab at a leading end, and a scale along the length between the side edges. The apparatus includes an end fitting piece and a medial...	03/08/2011
7898850	Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such ...	03/01/2011
7898019	Semiconductor constructions having multiple patterned masking layers over NAND gate stacks Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and ...	03/01/2011
7897460	Methods of forming recessed access devices associated with semiconductor constructions The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the ...	03/01/2011
7895974	Livestock feeder A livestock feeder is provided having a receptacle, a grate, a platform and an elevator mechanism. The receptacle has a chamber and an open mouth portion communicating with the chamber. The grate encompasses the open mouth portion. The platform is provided in the ch...	03/01/2011
PP21737	Peach tree named ‘Burpeachtwentyfour’ A new and distinct variety of Peach tree (Prunus persica), which is denominated varietally as ‘Burpeachtwentyfour’, and which produces an attractively colored white-fleshed, clingstone peach which is mature for harvesting and shipment approximately May 16...	03/01/2011
7892964	Vapor deposition methods for forming a metal-containing layer on a substrate Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carb...	02/22/2011

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Attorney: Wells St. John P.S.