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| Number | Title | Issue Date |
| 5162747 | Velocity modulation microwave amplifier with multiple band interaction structures Two or more signal interaction structures (16,18), which may be klystron or traveling wave structures (32,50), are axially disposed in series between an electron gun (12) and a collector (14) for selectively velocity modulating an electron beam (20) gener... | 11/10/1992 |
| 5162697 | Traveling wave tube with gain flattening slow wave structure A traveling wave tube (10) includes a coupled cavity type slow wave structure (100) having a driver stage (52) and an output section (101) with a primary section (64) and a velocity taper section (82) which in combinattion produce maximum signal gain at a... | 11/10/1992 |
| 5156998 | Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes A gallium arsenide monolithic microwave integrated circuit (MMIC) chip (12) has microelectronic devices (16,18) formed on a frontside surface (12a), and via holes (12c,12d) formed through the chip (12) from the frontside surface (12a) to the backside surf... | 10/20/1992 |
| 5140390 | High speed silicon-on-insulator device High speed silicon-on-insulator radiation hardened semiconductor devices and a method of fabricating same. Starting with a SIMOX wafer (10) having a layer of silicon (12) on a layer of buried oxide (11), P-well and N-well masks are aligned to an oversized... | 08/18/1992 |
| 5140188 | High speed latching comparator using devices with negative impedance A latching comparator circuit employs latching devices having a region of negative impedance separating regions of higher and lower positive impedance, such as resonant tunnel diodes, to significantly increase operating speed. The latching devices are bia... | 08/18/1992 |
| 5137837 | Radiation-hard, high-voltage semiconductive device structure fabricated on SOI substrate Highly doped N- and P-type wells (16a, 16b) in a first silicon layer (16) on an insulator layer (14) of a SIMOX substrate (10). Complementary MOSFET devices (52,54,58,62) are formed in lightly doped N- and P-type active areas (22a, 22b) in a second silico... | 08/11/1992 |
| 5136205 | Microelectronic field emission device with air bridge anode A field emission device employs an anode in the form of an air bridge spanning the tip of a field emission cathode. The anode is supported only at its opposite ends, leaving the area under the air bridge open. An array of cathode emitters employ a series ... | 08/04/1992 |
| 5105171 | Coplanar waveguide directional coupler and flip-clip microwave monolithic integrated circuit assembly incorporating the coupler A coplanar waveguide directional coupler (116,134) may be formed on a surface (102a,106a) of a substrate (102) and/or a microwave monolithic integrated circuit (MMIC) chip (106), with the MMIC chip (106) being flip-chip mounted on the substrate (102). The... | 04/14/1992 |
| 5103160 | Shunt regulator with tunnel oxide reference A shunt regulator for the programming voltage of programmable circuit devices employs components formed of the same layers that make up the regulated devices, including the same tunnel structure (52) of floating gate devices that are being regulated. A tr... | 04/07/1992 |
| 5034091 | Method of forming an electrical via structure A via (26) is formed through a dielectric layer (8) separating two conductive layers (16,28) by establishing a laterally erodible mask (18) over the dielectric (8), with a window (24) over the desired via location. The mask (18) and exposed dielectric mat... | 07/23/1991 |
| 5031145 | Sense amplifier A sense amplifier for determining the logic state of a memory cell consists of a switch transistor (N2) for receiving current during sensing from the memory cell (NV1), a nonvolatile transistor (NV2) providing a reference current which is compared to a re... | 07/09/1991 |
