WILLIAMS, MORGAN & AMERSON, P.C. - US Patent Attorneys and Agents

Attorney: WILLIAMS, MORGAN & AMERSON, P.C.

Number of patents: 167
Last date: May 22, 2012

Number	Title	Issue Date
8182709	CMP system and method using individually controlled temperature zones By creating a temperature profile across a polishing pad, a respective temperature profile may be obtained in a substrate to be polished, which may result in a respective varying removal rate across the substrate for a chemically reactive slurry material or for an e...	05/22/2012
8181698	Multi-function multi-hole drilling rig A multi-function multi-hole rig including multiple machines for accomplishing various rig functions, e.g., drilling machine(s), tripping machine(s), casing machine(s), cementing machine(s), workover machine(s), etc., for drilling, completing and/or working over mult...	05/22/2012
8181697	Multi-function multi-hole drilling rig A multi-function multi-hole rig is disclosed which, in certain aspects, includes multiple machines for accomplishing rig functions, e.g. drilling machine(s), tripping machine(s), casing machine(s), and/or cementing machine(s), for producing multiple usable wellbores...	05/22/2012
8180471	Tuning a process controller based on a dynamic sampling rate A method for estimating a state of a process implemented by a tool for fabricating workpieces includes collecting metrology data associated with a subset of workpieces processed in the tool. The collecting exhibits an irregular pattern. Metrology data associated wit...	05/15/2012
8180283	Method of providing feedback to a media server in a wireless communication system The present invention provides a method involving a media server, a wireless network, and at least one media client associated with at least one air interface with the wireless network. The method includes accessing first information indicative of at least one state...	05/15/2012
8174010	Unified test structure for stress migration tests A unified test structure which is applicable for all levels of a semiconductor device including a current path chain having a first half chain and a second half chain, wherein each half chain comprises lower metallization segments, upper metallization segments, an i...	05/08/2012
8173538	Method of selectively forming a conductive barrier layer by ALD By providing a surface modification process prior to or during a self-limiting deposition process, the per se highly conformal deposition behavior may be selectively changed so as to obtain reliable coverage at specific surface areas, while significantly reducing or...	05/08/2012
8173501	Reduced STI topography in high-K metal gate transistors by using a mask after channel semiconductor alloy deposition In a manufacturing strategy for providing high-k metal gate electrode structures in an early manufacturing stage, process-related non-uniformities during and after the patterning of the gate electrode structures may be reduced by providing a superior surface topogra...	05/08/2012
8172740	Controlled centrifuge systems The present disclosure is generally directed to centrifuge systems and methods for controlling centrifuge systems, wherein the systems in certain aspects are adapted for processing material, e.g., but not limited to drilling fluids with solids therein. One illustrat...	05/08/2012
8171958	Integrated plug/choke valve An adjustable valve is disclosed which includes a plug body having at least one flow path defined therein and a choke cage positioned proximate the plug body, the choke cage comprising a plurality of openings to permit a flow of a fluid therethrough, the choke cage ...	05/08/2012
8165693	Safe-mode implantable medical devices A method, system, and apparatus for implementing a safe mode operation of an implantable medical system using impedance adjustment(s) are provided. A first impedance is provided to a lead. An indication of a possibility of a coupled energy is received. Based upon sa...	04/24/2012
8164145	Three-dimensional transistor with double channel configuration A three-dimensional double channel transistor configuration is provided in which a second channel region may be embedded into the body region of the transistor, thereby providing a three-state behavior, which may therefore increase functionality of conventional thre...	04/24/2012
8160240	Echo cancellation balance using noise generator and average power detection A communication system includes transmit and receive paths, a balancing filter, a noise generator, a detector, and an interface. The transmit path is operable to generate data for communication on a communication network. The receive path is operable to receive data...	04/17/2012
8158486	Trench isolation structure having different stress By locally heating isolation trenches with different annealing conditions, a different magnitude of intrinsic stress may be obtained in different isolation trenches. In some illustrative embodiments, the different anneal temperature may be achieved on the basis of a...	04/17/2012
8158482	Asymmetric transistor devices formed by asymmetric spacers and tilted implantation An asymmetric transistor configuration is disclosed in which asymmetric extension regions and/or halo regions may be combined with an asymmetric spacer structure which may be used to further adjust the overall dopant profile of the asymmetric transistor. ...	04/17/2012
8155770	Method and apparatus for dispatching workpieces to tools based on processing and performance history Metrology data associated with a plurality of workpieces processed at a selected operation in the process flow including a plurality of operations is retrieved. A processing context associated with each of the workpieces is determined. The processing context identif...	04/10/2012
8154084	Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly contributing to overall process complexity. Furthermore, appropriate implantat...	04/10/2012
8149384	Method and apparatus for extracting dose and focus from critical dimension data A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library o...	04/03/2012
8147670	Profile control on ring anode plating chambers for multi-step recipes The present disclosure generally addresses the problem of controlling a plating profile in multi-step recipes and addresses, in particular, the problem of compensating for variations of the plating tool state to stabilize the plating results. The compensation is don...	04/03/2012
8143132	Transistor including a high-K metal gate electrode structure formed on the basis of a simplified spacer regime In sophisticated semiconductor devices, the threshold voltage adjustment of high-k metal gate electrode structures may be accomplished by a work function metal species provided in an early manufacturing stage. For this purpose, a protective sidewall spacer structure...	03/27/2012
8140159	Safe-mode operation of an implantable medical device A method, system, and apparatus for implementing a safe mode operation of an implantable medical system using impedance adjustment(s) are provided. A first impedance is provided to a lead. An indication of a possibility of a coupled energy is received. Based upon sa...	03/20/2012
8138571	Semiconductor device comprising isolation trenches inducing different types of strain By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted so as to obtain overall device performance. For example, highly stres...	03/20/2012
8138050	Transistor device comprising an asymmetric embedded semiconductor alloy Transistor characteristics may be adjusted on the basis of asymmetrically formed cavities in the drain and source areas so as to maintain a strain-inducing mechanism while at the same time providing the possibility of obtaining asymmetric configuration of the drain ...	03/20/2012
8138038	Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill material In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive material...	03/20/2012
8137818	Poly(lactic acid)-containing compositions for use in imparting oil, grease, or water resistance to paper Herein disclosed is a composition containing from about 5 weight parts to about 50 weight parts of a branched polylactic acid; from about 50 weight parts to about 95 weight parts of water; and from about 0.1 weight parts to about 1 weight part of a first surfactant....	03/20/2012
8135962	System and method providing region-granular, hardware-controlled memory encryption A memory, system, and method for providing security for data stored within a memory and arranged within a plurality of memory regions. The method includes receiving an address within a selected memory region and using the address to access an encryption indicator. T...	03/13/2012
8134953	Method of determining characteristics of access classes in wireless communication systems The present invention provides a method of determining characteristics of access classes in a wireless communication system. In one embodiment, a method is provided for implementation in an access network of a wireless communication system. The method includes mappi...	03/13/2012
8133164	Transportable systems for treating drilling fluid A system for well fluid treatment, the system being transportable, the system including a base, a support structure on the base, a brace apparatus connected to the base and to the support structure for bracing the support structure during movement of the system, the...	03/13/2012
8129276	Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistors In sophisticated semiconductor devices, a contact structure may be formed on the basis of a void positioned between closely spaced transistor elements wherein disadvantageous metal migration along the void may be suppressed by sealing the voids after etching a conta...	03/06/2012
8129236	Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrode After forming the outer drain and source regions of an N-channel transistor, the spacer structure may be removed on the basis of an appropriately designed etch stop layer so that a rigid material layer may be positioned more closely to the gate electrode, thereby en...	03/06/2012
8127057	Multi-level buffering of transactional data An apparatus, method, and system for implementing a hardware transactional memory (HTM) system with multiple levels of transactional buffers. The apparatus comprises a data cache configured to buffer data in a shared (by a plurality of processing cores) memory acces...	02/28/2012
8124532	Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The tin and nickel-containing copper alloy may be formed in a gaseous am...	02/28/2012
8124467	Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistors In sophisticated P-channel transistors, a high germanium concentration may be used in a silicon/germanium alloy, wherein an additional semiconductor cap layer may provide enhanced process conditions during the formation of a metal silicide. For example, a silicon la...	02/28/2012
8119461	Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the interface quality and the material characteristics of the gate dielectri...	02/21/2012
8118932	Technique for monitoring dynamic processes in metal lines of microstructures By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes within a metallization layer of semiconductor devices may be efficient...	02/21/2012
8118172	Shale shakers with cartridge screen assemblies A screening apparatus for separating components of a material by vibratory separation which, in certain aspects, includes a vibratable box connected via vibration isolators within a container, the box including screening apparatus thereon or the vibratory separator ...	02/21/2012
8117548	Image preview A method, apparatus, and system are provided for displaying a graphical representation of at least a portion of a file by interfacing with a graphical interface relating to the file. A request for viewing a file content is received. A window for viewing a graphical ...	02/14/2012
8114746	Method for forming double gate and tri-gate transistors on a bulk substrate Three-dimensional transistor structures such as FinFETS and tri-gate transistors may be formed on the basis of an enhanced masking regime, thereby enabling the formation of drain and source areas, the fins and isolation structures in a self-aligned manner within a b...	02/14/2012
8110498	Method for passivating exposed copper surfaces in a metallization layer of a semiconductor device When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surfa...	02/07/2012
8110487	Method of creating a strained channel region in a transistor by deep implantation of strain-inducing species below the channel region By incorporating a carbon species below the channel region of a P-channel transistor prior to the formation of the gate electrode structure, an efficient strain-inducing mechanism may provided, thereby enhancing performance of P-channel transistors. The position and...	02/07/2012

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Attorney: WILLIAMS, MORGAN & AMERSON, P.C.