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| Number | Title | Issue Date |
| 5857250 | Method of forming a capacitance type gaseous sensing device and apparatus thereof The capacitance type gaseous sensing device (10) includes a first electrode layer (12) formed on a semiconductor substrate layer (14). A seed layer (16) is formed on the first electrode layer (12). A reorganized layer (18) is formed on the first electrode... | 01/12/1999 |
