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Patent No. 5356330

Apparatus for Simulating a High Five

A self-righting hand-arm configuration which is adapted to pivot when struck by a user, thereby simulating a "high five."

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Attorney: Underweiser; Marian


Number of patents: 18
Last date: August 15, 2006

NumberTitleIssue Date
7093126Encryption schemes with almost free integrity awareness
An encryption/decryption method and system. The method comprises the steps of encrypting a plaintext message by dividing the plaintext message into a multitude of plaintext blocks and encrypting the plaintext blocks to form a multitude of cyphertext blocks. A single...
08/15/2006
6984415Delivery systems for gases for gases via the sublimation of solid precursors
A method of depositing a metal or other desired material onto a substrate using a gas generated via the sublimation of solid material precursors, wherein a sold precursor is introduced into a liquid in a bubbler apparatus so that the bubbler then contains vapors of ...
01/10/2006
6967416Shared on-chip decoupling capacitor and heat-sink devices
A method and structure for an integrated chip structure comprises a substrate having a power supply, a chip attached to the substrate, at least two decoupling capacitors attached to the chip and to the power supply, and a control circuit adapted to select physical l...
11/22/2005
6538709LCD panel including plurality of display panel parts wrapped around by a thin plastic film envelope with an opening
A liquid crystal display panel part group composed of a plurality of panel parts such as an array cell, a optical system sheet family, a light guide plate, a lamp reflector, and a lamp, and a liquid crystal display panel is enveloped in a film for laminat...
03/25/2003
6538919Magnetic tunnel junctions using ferrimagnetic materials
The use of ferrimagnetic materials is proposed for use in magnetic devices. Such magnetic devices include magnetic tunnel junctions (MTJ) which have at least two magnetic layers separated by an insulating barrier layer, wherein at least one of the two mag...
03/25/2003
6501217Anode modification for organic light emitting diodes
An organic light emitting device is provided which includes a cathode (51), an anode (47, 46, 48), and an organic electroluminescent region (49, 50). The anode includes a metal layer (46), a barrier layer (47), and an anode modification layer (48). Light ...
12/31/2002
6490217Select line architecture for magnetic random access memories
A magnetic memory device for selectively writing one or more memory cells in the memory device includes a plurality of global write lines for selectively conveying a destabilizing current, the global write lines being disposed from the memory cells such t...
12/03/2002
6452240Increased damping of magnetization in magnetic materials
In order to dampen magnetization changes in magnetic devices, such as tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the ma...
09/17/2002
6437596Integrated circuits for testing a display array
An improved apparatus for testing an array of pixel cells formed on a substrate is provided. Each pixel cell is coupled to at least one gate line of a plurality of gate lines formed on the substrate and at least one data line of a plurality of data lines ...
08/20/2002
6432741Organic opto-electronic devices and method for making the same
The present invention pertains to new flip-chip organic opto-electronic structures and methods for making the same. The new organic opto-electronic device includes at least two separate parts. Each part comprises an electrode and at least one of these ele...
08/13/2002
6404671Data-dependent field compensation for writing magnetic random access memories
A field compensation circuit for selectively writing one or more selected magnetic memory cells in a magnetic random access memory (MRAM) includes a controller for detecting a characteristic representative of an anticipated interaction between a magnetic ...
06/11/2002
6385082Thermally-assisted magnetic random access memory (MRAM)
It is important to ensure good selectivity of a single magnetic tunnel junction storage cell within a memory array without affecting nearby storage cells. For this purpose, this memory array of storage cells preferably comprises a) an array of electricall...
05/07/2002
6369825Method of transferring image data to reduce transitions of data
A first image data portion and a second image data portion differing from the first image data portion are converted so that they become similar to each other in binary notation. This conversion is performed, for example, by addition. Then, the first and ...
04/09/2002
6369400Magnetic scanning or positioning system with at least two degrees of freedom
A scanning or positioning system with at least two degrees of freedom is provided comprising a supporting base equipped with magnets, a movable platform equipped with at least two electrical coils, and suspension elements providing an elastic connection b...
04/09/2002
6348915Data-transferring method and apparatus for reducing the number of data-bit changes
In transferring n data bits by the n data lines of an LCD, the n data lines are divided into s blocks each with m data bits (n=m×s). A majority decision is performed on the s blocks and is again performed on the s outputs from the s blocks. With this, a ...
02/19/2002
6335890Segmented write line architecture for writing magnetic random access memories
An architecture for selectively writing one or more magnetic memory cells in a magnetic random access memory (MRAM) device comprises at least one write line including a global write line conductor and a plurality of segmented write line conductors connect...
01/01/2002
6316786Organic opto-electronic devices
The present invention pertains to new flip-chip organic opto-electronic structures and methods for making the same. The new organic opto-electronic device includes at least two separate parts. Each part comprises an electrode and at least one of these ele...
11/13/2001
6299991Selective growth of ferromagnetic films for magnetic memory, storage-based devices
A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the ...
10/09/2001
 
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