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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 6589874 | Method for forming electromigration-resistant structures by doping A method for forming a copper conductor in an electronic structure by first depositing a copper composition in a receptacle formed in the electronic structure, and then adding impurities into the copper composition such that its electromigration resistanc... | 07/08/2003 |
| 6570255 | Method for forming interconnects on semiconductor substrates and structures formed A method for forming metal interconnect in a semiconductor structure and the structure formed are disclosed. In the method, a seed layer of a first metal is first deposited into an interconnect opening wherein the seed layer has an average grain size of a... | 05/27/2003 |
| 6566612 | Method for direct chip attach by solder bumps and an underfill layer A method for direct chip attach of a semiconductor chip to a circuit board by using solder bumps and an underfill layer is disclosed. In the method, a layer of in-situ polymeric mold material is first screen printed on the top surface of the semiconductor... | 05/20/2003 |
| 6545339 | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication A semiconductor structure that includes at least one circuit element of a fuse, a diffusion barrier or a capacitor that is formed by refractory metal-silicon-nitrogen is disclosed. A method for fabricating such semiconductor structure that includes a fuse... | 04/08/2003 |
| 6527158 | Method and apparatus for forming solder bumps The present invention discloses a method and apparatus for forming solder bumps by a molten solder screening technique in which a flexible die head constructed of a metal sheet is utilized for maintaining an intimate contact between the die head and a sol... | 03/04/2003 |
| 6524908 | Method for forming refractory metal-silicon-nitrogen capacitors and structures formed A method forforming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure and the structure formed are described. In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown... | 02/25/2003 |
| 6503641 | Interconnects with Ti-containing liners An electrical conductor for use in an electronic structure is disclosed which includes a conductor body that is formed of an alloy including between about 0.001 atomic % and about 2 atomic % of an element selected from the group consisting of Ti, Zr, In, ... | 01/07/2003 |
| 6497963 | Hydrogenated oxidized silicon carbon material A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon car... | 12/24/2002 |
| 6479110 | Multiphase low dielectric constant material and method of deposition A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposi... | 11/12/2002 |
| 6461136 | Apparatus for filling high aspect ratio via holes in electronic substrates An apparatus and a method for filling high aspect ratio holes in electronic substrates that can be advantageously used for filling holes having aspect ratios larger than 5:1 are disclosed. In the apparatus, a filler plate and a vacuum plate are used in co... | 10/08/2002 |
| 6451712 | Method for forming a porous dielectric material layer in a semiconductor device and device formed A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, the... | 09/17/2002 |
| 6437443 | Multiphase low dielectric constant material and method of deposition A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposi... | 08/20/2002 |
| 6436823 | Method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure and structure formed A method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure without the formation of a thick amorphous layer containing Ti, Co and Si and the structure formed are provided. In the method, after a Ti layer is deposited on... | 08/20/2002 |
| 6429523 | Method for forming interconnects on semiconductor substrates and structures formed A method for forming metal interconnect in a semiconductor structure and the structure formed are disclosed. In the method, a seed layer of a first metal is first deposited into an interconnect opening wherein the seed layer has an average grain size of a... | 08/06/2002 |
| 6426241 | Method for forming three-dimensional circuitization and circuits formed A method for forming three-dimensional circuitization in a substrate is provided for forming conductive traces and via contacts. In the method, a substrate formed of a substantially insulating material is first provided, grooves and apertures in a top sur... | 07/30/2002 |
| 6399496 | Copper interconnection structure incorporating a metal seed layer The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not c... | 06/04/2002 |
| 6396151 | Partially-overlapped interconnect structure and method of making The present invention is concerned with an interconnect structure for providing electrical communication between an interconnect and a contact in a semiconductor device which includes a contact formed of aluminum or aluminum-copper, an aluminum-copper all... | 05/28/2002 |
| 6394334 | Method and apparatus for forming solder bumps The present invention discloses a method and apparatus for forming solder bumps by a molten solder screening technique in which a flexible die head constructed of a metal sheet is utilized for maintaining an intimate contact between the die head and a sol... | 05/28/2002 |
| 6390439 | Hybrid molds for molten solder screening process Hybrid molds for molding a multiplicity of solder balls for use in a molten solder screening process and methods for preparing such molds are disclosed. A method for forming the multiplicity of cavities in a pyramidal shape by anisotropically etching a cr... | 05/21/2002 |
| 6380075 | Method for forming an open-bottom liner for a conductor in an electronic structure and device formed A method for forming an open-bottom liner for a conductor in an electronic structure and devices formed are disclosed. In the method, a pre-processed electronic substrate that has a dielectric layer on top is first provided. Via openings are then formed i... | 04/30/2002 |
| 6362557 | Ultrasonic method and actuator for inducing motion of an object An actuator scaled to macroscopic or microscopic sizes, uses ultrasonic energy to induce motion of an object in a desired direction. The actuator includes one or more pair of piezoelectric transducers connected with a transducer tip. Supplying the piezoel... | 03/26/2002 |
| 6335569 | Soft metal conductor and method of making A soft metal conductor for use in a semiconductor device which has an uppermost layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free surface upon polishing in a subsequent polishing step. The inven... | 01/01/2002 |
| 6335104 | Method for preparing a conductive pad for electrical connection and conductive pad formed A method for preparing a copper pad surface for electrical connection that has superior diffusion barrier and adhesion properties is provided. In the method, a copper pad surface is first provided that has been cleaned by an acid solution, a protection la... | 01/01/2002 |
| 6291801 | Continual flow rapid thermal processing apparatus and method A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the c... | 09/18/2001 |
| 6285082 | Soft metal conductor A soft metal conductor for use in a semiconductor device that has an upper-most layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free surface upon polishing in a subsequent chemical mechanical polis... | 09/04/2001 |
| 6281479 | Continual flow rapid thermal processing apparatus and method A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the c... | 08/28/2001 |
| 6276596 | Low temperature solder column attach by injection molded solder and structure formed A method for joining a multiplicity of multi-alloy solder columns to an electronic substrate and the structure formed by such method are disclosed. In the method, a mold plate equipped with a multiplicity of cavities is first filled by an injection molded... | 08/21/2001 |
| 6127735 | Interconnect for low temperature chip attachment A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then ... | 10/03/2000 |
| 6063506 | Copper alloys for chip and package interconnections Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package ... | 05/16/2000 |
| 6056191 | Method and apparatus for forming solder bumps The present invention discloses a method and apparatus for forming solder bumps by a molten solder screening technique in which a flexible die head constructed of a metal sheet is utilized for maintaining an intimate contact between the die head and a sol... | 05/02/2000 |
| 6030895 | Method of making a soft metal conductor A soft metal conductor for use in a semiconductor device that has an upper-most layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free surface upon polishing in a subsequent chemical mechanical polis... | 02/29/2000 |
| 6005292 | Lead-free interconnection for electronic devices An electronic device that is equipped with a plurality of bonding pads positioned on the device for making electrical interconnections and electrically conductive composite bumps adhered to the bonding pads wherein the bumps are formed of a composite mate... | 12/21/1999 |
| 6003757 | Apparatus for transferring solder bumps and method of using An apparatus and a method for transferring solder bumps from a solder mold to a solder-receiving substrate are disclosed. The apparatus includes a transfer fixture constructed by a base member, a lid member and a compressible member for holding a mold/sub... | 12/21/1999 |
