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Attorney: Trepp; Robert M., Dougherty; Anne Vachon


Number of patents: 9
Last date: June 17, 2003

NumberTitleIssue Date
6579743Chip packaging system and method using deposited diamond film
A chip packaging system and method for providing enhanced thermal cooling including a first embodiment wherein a diamond thin film is used to replace at least the surface layer of the existing packaging material in order to form a highly heat conductive p...
06/17/2003
6573565Method and structure for providing improved thermal conduction for silicon semiconductor devices
Thermal cooling structures of diamond or diamond-like materials are provided for conducting heat away from semiconductor devices. A first silicon-on-insulator embodiment comprises a plurality of thermal paths, formed after shallow trench and device fabric...
06/03/2003
6391773Method and materials for through-mask electroplating and selective base removal
Multilayer metal materials are selected so that the materials will alloy or intermix under rapid thermal annealing conditions. The individual materials of the multilayers are preferably chosen such that at least one of the materials may be selectively etc...
05/21/2002
6352882Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
Doped polysilicon plugs are formed in contact with MOSFET device regions and passing through the buried oxide region into the opposite type silicon substrate of an SOI structure. The polysilicon plugs are in contact with the sources and drains of the MOSF...
03/05/2002
6337513Chip packaging system and method using deposited diamond film
A chip packaging system and method for providing enhanced thermal cooling including a first embodiment wherein a diamond thin film is used to replace at least the surface layer of the existing packaging material in order to form a highly heat conductive p...
01/08/2002
6271076Method for fabricating a novel metallized oxide structure
A structure and method for providing an interface with an oxide surface which exhibits both high adhesion and preferred electrical properties. The method involves providing a partial layer of a first material, chosen for its electrical properties, whereby...
08/07/2001
6188120Method and materials for through-mask electroplating and selective base removal
Multilayer metal materials are selected so that the materials will alloy or intermix under rapid thermal annealing conditions. The individual materials of the multilayers are preferably chosen such that at least one of the materials may be selectively etc...
02/13/2001
6121661Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
Doped polysilicon plugs are formed in contact with MOSFET device regions and passing through the buried oxide region into the opposite type silicon substrate of an SOI structure. The polysilicon plugs are in contact with the sources and drains of the MOSF...
09/19/2000
5781607Membrane mask structure, fabrication and use
A membrane mask structure for lithography using a radiation source and steps for fabricating and using the inventive membrane mask structure. The membrane mask structure comprises the following: a support structure formed of a material which is opaque to ...
07/14/1998
 
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