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| Number | Title | Issue Date |
| 8073631 | Device and method for responding to influences of mind In the field of direct mind-machine interactions, prior art devices and methods do not provide sufficiently fast and reliable results. Mental influence detectors (100, 140, 400, 430) and corresponding methods provide fast and reliable results useful for detec... | 12/06/2011 |
| 7752247 | Random number generator and generation method An RNG circuit is connected to the parallel port of a computer. The circuit includes a flat source of white noise and a CMOS amplifier circuit compensated in the high frequency range. A low-frequency cut-off is selected to maintain high band-width yet eliminate the ... | 07/06/2010 |
| 7560016 | Selectively accelerated plating of metal features To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region an... | 07/14/2009 |
| 7514375 | Pulsed bias having high pulse frequency for filling gaps with dielectric material During bottom filling of high aspect ratio gaps and trenches in an integrated circuit substrate using HDP-CVD, a pulsed HF bias is applied to the substrate. In some embodiments, pulsed HF bias is applied to the substrate during etching operations. The pulsed bias ty... | 04/07/2009 |
| 7449099 | Selectively accelerated plating of metal features To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region an... | 11/11/2008 |
| 7442267 | Anneal of ruthenium seed layer to improve copper plating A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N2 forming gas, ... | 10/28/2008 |
| 7405163 | Selectively accelerated plating of metal features An accelerator solution is globally applied to a workpiece to form an accelerator film, and then a portion of the accelerator film is selectively removed from the workpiece to form an acceleration region having a higher concentration of accelerator. The higher conce... | 07/29/2008 |
| 7327001 | PMOS transistor with compressive dielectric capping layer A salicide layer is deposited on the source/drain regions of a PMOS transistor. A dielectric capping layer having residual compressive stress is formed on the salicide layer by depositing a plurality of PECVD dielectric sublayers and plasma-treating each sublayer. C... | 02/05/2008 |
| 7232513 | Electroplating bath containing wetting agent for defect reduction An electroplating solution contains a wetting agent in addition to a suppressor and an accelerator. In some embodiments, the solution has a cloud point temperature greater than 35° C. to avoid precipitation of wetting agent or other solute out of the plating soluti... | 06/19/2007 |
| 7214630 | PMOS transistor with compressive dielectric capping layer A salicide layer is deposited on the source/drain regions of a PMOS transistor. A dielectric capping layer having residual compressive stress is formed on the salicide layer by depositing a plurality of PECVD dielectric sublayers and plasma-treating each sublayer. C... | 05/08/2007 |
| 7107998 | Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhib... | 09/19/2006 |
| 7096242 | Random number generator and generation method An RNG circuit is connected to the parallel port of a computer. The circuit includes a flat source of white noise and a CMOS amplifier circuit compensated in the high frequency range. A low-frequency cut-off is selected to maintain high band-width yet eliminate the ... | 08/22/2006 |
| 7070686 | Dynamically variable field shaping element In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and th... | 07/04/2006 |
| 7041596 | Surface treatment using iodine plasma to improve metal deposition An excited surfactant species is created by generating plasma discharge in a surfactant precursor gas. A surfactant species typically includes at least one of iodine, led, thin, gallium, and indium. A surface of an integrated circuit substrate is exposed to the exci... | 05/09/2006 |
| 6884335 | Electroplating using DC current interruption and variable rotation rate A negative bias is applied to an integrated circuit wafer immersed in an electrolytic plating solution to generate a DC current. After about ten percent to sixty percent of the final layer thickness has formed in a first plating time, biasing is interrupted during s... | 04/26/2005 |
| 6855645 | Silicon carbide having low dielectric constant A low-k precursor reactant compound containing silicon and carbon atoms is flowed into a CVD reaction chamber. High-frequency radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD apparatus, and low-fre... | 02/15/2005 |
| 6777349 | Hermetic silicon carbide Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together w... | 08/17/2004 |
| 6402923 | Method and apparatus for uniform electroplating of integrated circuits using a variable field shaping element An electrochemical reactor is used to electrofill damascene architecture for integrated circuits. A shield is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The shield establ... | 06/11/2002 |
| 6376391 | Pulsed or tailored bias for filling gaps with low dielectric constant material A variable high frequency rf bias is applied to a substrate during a high density plasma CVD process for filling gaps in integrated circuits with low dielectric material. The rf bias is varied by applying it as a pulse or by tailoring the magnitude of the... | 04/23/2002 |
