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| Number | Title | Issue Date |
| 7977143 | CMOS image sensor and fabricating method thereof A CMOS image sensor and fabricating method thereof are disclosed. The method includes forming a plurality of photodiode regions on a semiconductor substrate, forming a plurality of color filters respectively corresponding to the photodiode regions, forming a planari... | 07/12/2011 |
| 7956398 | Capacitor of semiconductor device and method of fabricating the same Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom surface and three lateral sides of the capacitor top electrode, and a capac... | 06/07/2011 |
| 7948022 | Flash memory device and method for manufacturing the same A flash memory device, and a manufacturing method thereof, having advantages of protecting sidewalls of a floating gate and a control gate and preventing a recess of an active area of a source region are provided. The method includes forming a tunneling oxide layer ... | 05/24/2011 |
| 7935551 | Image sensor and method for manufacturing the same A method for manufacturing a sensor image may include forming a pixel array including a photodiode structure and an insulating film structure in an active area of a semiconductor substrate; forming a metal pad on the insulating film structure; forming a dielectric a... | 05/03/2011 |
| 7768335 | Voltage level shifter circuit A voltage level shifter circuit is provided. A high power voltage is input to a first power voltage terminal, an enable signal is input to an enable terminal, and an intermediate voltage level between the first power voltage and a high enable signal voltage is input... | 08/03/2010 |
| 7704845 | Varactor and method for manufacturing the same Disclosed is a varactor and/or variable capacitor. The varactor/variable capacitor includes a plurality of first conductive-type wells vertically formed on a substrate, a plurality of second conductive-type ion implantation areas formed in the first conductive-type ... | 04/27/2010 |
| 7682965 | Method for manufacturing semiconductor device Provided is a method for manufacturing a semiconductor device. An insulation layer is formed on a bottom structure of a semiconductor substrate. Then, a trench and a via hole are formed by selectively etching the insulation layer, and a copper layer is deposited to ... | 03/23/2010 |
| 7605418 | Methods of fabricating capacitor A fabricating method of a capacitor is disclosed. Particularly, a fabricating method of a capacitor which forms a capacitor in the place where the insulation layer of an STI region is removed, preventing interlayer dielectric layers from becoming thick. A disclosed ... | 10/20/2009 |
| 7595265 | Semiconductor device and method for forming a metal line in the semiconductor device Contact resistance of a semiconductor device may be reduced, and thereby the reliability of the semiconductor device may be enhanced, when a metal line is formed in a semiconductor device according to a method including: (i) forming a metal layer on a semiconductor ... | 09/29/2009 |
| 7579230 | High voltage BICMOS device and method for manufacturing the same A high voltage BICMOS device and a method for manufacturing the same, which may improve the reliability of the device by securing a distance between adjacent DUF regions, are provided. The high voltage BICOMOS device includes: a reverse diffusion under field (DUF) r... | 08/25/2009 |
