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| Number | Title | Issue Date |
| 8183649 | Buried aperture nitride light-emitting device A buried aperture in a nitride light emitting device is described. The aperture is formed in an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also inclu... | 05/22/2012 |
| 8164122 | Thin film field effect transistor with dual semiconductor layers A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is p... | 04/24/2012 |
| 8154009 | Light emitting structure including high-al content MQWH A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and... | 04/10/2012 |
| 8139277 | Multiple-source multiple-beam polarized laser scanning system Two integrated multi-beam sources are positioned and disposed such that each emits light toward an optical splitter. The emitted light is polarized such that the splitter brings the optical paths of the two integrated multi-beam sources generally parallel to one ano... | 03/20/2012 |
| 8088637 | Method of manufacturing a semiconductor device including a superlattice strain relief layer A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and... | 01/03/2012 |
| 8053818 | Thin film field effect transistor with dual semiconductor layers A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is p... | 11/08/2011 |
| 8023546 | Semiconductor laser with integrated contact and waveguide A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a r... | 09/20/2011 |
| 8023544 | Semiconductor light emitting devices with non-epitaxial upper cladding The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. I... | 09/20/2011 |
| 8000371 | Vertical surface emitting semiconductor device A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes... | 08/16/2011 |
| 8000366 | Laser diode with high indium active layer and lattice matched cladding layer A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN a... | 08/16/2011 |
| 7973311 | Isolated sensor structures such as for flexible substrates A photosensor structure includes a pixel metal layer disposed in physical and electrical contact with a pixel thin film transistor and a lower sensor layer of a p-i-n photosensor. The pixel metal layer extends laterally to an extent less that the lower sensor layer ... | 07/05/2011 |
| 7955783 | Lamination for printed photomask A method for masking regions of photoresist in the manufacture of a soldermask for printed circuit boards is disclosed. Following application of photoresist over patterned traces on a substrate, a sheet-like thin film is applied over the photosensitive material. The... | 06/07/2011 |
| 7927905 | Method of producing microsprings having nanowire tip structures A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolitho... | 04/19/2011 |
| 7889416 | Method of aligning a light beam in an optical scanning system employing an agile beam steering mirror Scan line position error resulting in banding, bow, skew, etc. is corrected by way of an agile beam steering mirror assembly in a ROS printing system and the like. The agile beam steering mirror system comprises a piezoelectric bending actuator fixedly mounted to a ... | 02/15/2011 |
| 7884361 | Pattern-print thin-film transistors with top gate geometry A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal l... | 02/08/2011 |
| 7856040 | Semiconductor light emitting devices with non-epitaxial upper cladding The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. I... | 12/21/2010 |
| 7855098 | Method of forming, modifying, or repairing a semiconductor device using field-controlled diffusion A technique for altering or repairing the operating state of a semiconductor device comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in the presence of an electric field (e.g., bias t... | 12/21/2010 |
| 7843982 | High power semiconductor device to output light with low-absorbtive facet window A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater tha... | 11/30/2010 |
| 7842521 | Edge exclusion zone patterning for solar cells and the like The edge profile (and optionally the physical and electrical characteristics) of a wafer is determined. Useful regions of the wafer in an edge exclusion zone may then be identified. A customized grid array layout is created specific to that wafer from an analysis of... | 11/30/2010 |
| 7838330 | Method of field-controlled diffusion and devices formed thereby A technique for creating high quality Schottky barrier devices in doped (e.g., Li+) crystalline metal oxide (e.g., ZnO) comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in ... | 11/23/2010 |
| 7809211 | Image normalization for computed image construction Image normalization examines the pixels of two frames, most commonly sequentially obtained sub-images, and mathematically determines the displacement of those pixels from the first frame to the second based on pixel data. The pixel data is obtained from a scanning d... | 10/05/2010 |
| 7804090 | Patterned-print thin-film transistors with top gate geometry A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal l... | 09/28/2010 |
| 7783587 | Method, system, and program for defining and managing complex contingent rules, and exceptions thereto, in a rule-based computer system An apparatus for storage, selective inspection, and execution of complex, contingent rules, comprises a computer having one or more central processing units, a user interface, and magnetic, optical, or other media for data and program storage and retrieval. Rules ar... | 08/24/2010 |
| 7768273 | Electrostatic discharge protection of a capacitive type fingerprint sensing array A planar fingerprint pattern detecting array includes a large number of individual skin-distance sensing cells that are arranged in a row/column configuration. Each sensing cell includes a first capacitor plate placed vertically under the upper surface of a dielectr... | 08/03/2010 |
| 7764721 | System for adjusting the wavelength light output of a semiconductor device using hydrogenation A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated... | 07/27/2010 |
| 7751455 | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the u... | 07/06/2010 |
| 7749916 | Additive printed mask process and structures produced thereby A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material... | 07/06/2010 |
| 7741147 | Method of field-controlled diffusion and devices formed thereby A technique for creating high quality Schottky barrier devices in doped (e.g., Li+) crystalline metal oxide (e.g., ZnO) comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in ... | 06/22/2010 |
| 7718455 | Method of forming a buried aperture nitride light emitting device A method of forming a buried aperture in a nitride light emitting device is described. The method involves forming an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer materia... | 05/18/2010 |
| 7649205 | Self-aligned thin-film transistor and method of forming same A method of manufacturing a thin-film transistor or like structure provides conductive “tails” below an overhang region formed by a top gate structure. The tails increase in thickness as they extend outward from a point under the overhang to the source and drain... | 01/19/2010 |
| 7648860 | Self-aligned thin-film transistor and method of forming same A method of manufacturing a thin-film transistor or like structure provides conductive “tails” below an overhang region formed by a top gate structure. The tails increase in thickness as they extend outward from a point under the overhang to the source and drain... | 01/19/2010 |
| D607255 | Apparatus for organizing and displaying gift cards and the like | 01/05/2010 |
| 7619609 | Fluidic display apparatus A display device uses the presence or absence of a pigmented fluid in a pixel to indicate pixel state. Fluid flow to or extraction from individual pixels is controlled through manipulation of row and column fluid pressures. A pixel wall opposite a viewer may be prov... | 11/17/2009 |
| 7606865 | Collaboration system and method A collaboration system and method are provided. In the collaboration system, a collaborative web service is provided that mimics the simplicity of email and the collaboration system can be integrated into other databases. ... | 10/20/2009 |
| 7591475 | Simplified rear suspension for a bicycle or the like A simplified rear suspension for a bicycle or the like comprises a wishbone seatstay structure. The wishbone structure is provided with a first extension extending toward the seat junction. A low friction guide component, for example a spherical element, is provided... | 09/22/2009 |
| 7550855 | Vertically spaced plural microsprings A plurality of vertically spaced-apart microsprings are provided to increase microspring contact force, contact area, contact reliability, and contact yield. The microspring material is deposited, either as a single layer or as a composite of multiple sub layers, to... | 06/23/2009 |
| 7547925 | Superlattice strain relief layer for semiconductor devices A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and... | 06/16/2009 |
| 7542200 | Agile beam steering mirror for active raster scan error correction Scan line position error resulting in banding, bow, skew, etc. is corrected by way of an agile beam steering mirror assembly in a ROS printing system and the like. The agile beam steering mirror system comprises a piezoelectric bending actuator fixedly mounted to a ... | 06/02/2009 |
| 7522753 | Electrostatic discharge protection of a capacitive type fingerprint sensing array A planar fingerprint pattern detecting array includes a large number of individual skin-distance sensing cells that are arranged in a row/column configuration. Each sensing cell includes an amplifier having an ungrounded input mode and an ungrounded output node. Out... | 04/21/2009 |
| 7501299 | Method for controlling the structure and surface qualities of a thin film and product produced thereby A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a ... | 03/10/2009 |
