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Attorney: Slater & Matsil, L.L.P.


Number of patents: 2258
Last date: May 22, 2012

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NumberTitleIssue Date
8184760Adaptive elastic buffer for communications
Circuit and method for an adaptive elastic buffer for receiving data including timing signals. Received data is recovered and stored in the adaptive elastic buffer, and a recovery clock pointer is increased to identify the next buffer location for stuffing received ...
05/22/2012
8183926Electronic circuit output stage
An electronic circuit including: a first branch, placed between two terminals of application of a D.C. voltage, including a series connection of a first constant current source, of a first diode-connected N-channel MOS transistor, of a first diode-connected P-channe...
05/22/2012
8183914Constant Gm circuit and methods
Structures and methods for providing a temperature independent constant current reference are provided. A constant Gm circuit is disclosed with embodiments including a voltage controlled resistor providing a current into a current mirror, the current mirror sinking ...
05/22/2012
8183910Circuit and method for a digital process monitor
A circuit and method for a digital process monitor is disclosed. Circuits for comparing a current or voltage to a current or voltage corresponding to a device having process dependent circuit characteristics are disclosed, having converters for converting current or...
05/22/2012
8183696Packaged semiconductor device with encapsulant embedding semiconductor chip that includes contact pads
A semiconductor package includes a semiconductor chip, an encapsulant embedding the semiconductor chip, first contact pads on a first main face of the semiconductor package and second contact pads on a second main face of the semiconductor package opposite to the fi...
05/22/2012
8183667Epitaxial growth of crystalline material
A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which r...
05/22/2012
8183626High-voltage MOS devices having gates extending into recesses of substrates
An integrated circuit structure includes a high-voltage well (HVW) region in a semiconductor substrate; a first double diffusion (DD) region in the HVW region; and a second DD region in the HVW region. The first DD region and the second DD region are spaced apart fr...
05/22/2012
8183156Method of etching a material surface
Disclosed is a method of structuring a material surface by dry etching, so that a passivation layer soluble in a solvent forms by the dry etching on parts of the structured material surface, sealing the passivation layer with a substance soluble in the solvent, and ...
05/22/2012
8183129Alignment marks for polarized light lithography and method for use thereof
Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality...
05/22/2012
8181822Liquid food dispenser system and method
A system and method for dispensing fluids is introduced. A preferred embodiment comprises a sealed tank, a bag containing fluid inside the sealed tank, an outlet for dispensing the liquid in the bag, and a pressure generating device to create pressure in the sealed ...
05/22/2012
D660270Mobile phone
05/22/2012
D660269Mobile phone
05/22/2012
D660268Mobile phone
05/22/2012
8181013Method, media gateway and system for transmitting content in call established via media gateway control protocol
A method for transmitting content in a call established via media gateway control protocol includes: encrypting an RFC, Request for Comment, 2833 message with a first key; and sending out the encrypted RFC2833 message. The key used for encryption and decryption may ...
05/15/2012
8180327Method, device, and mobile terminal for controlling locking and unlocking
A method, a device, and a mobile terminal for controlling locking and unlocking are provided. The method includes the following steps. An acceleration sensor is adopted to detect a location state of a mobile terminal. A stabilization timer is started and a stabiliza...
05/15/2012
8179651Overload protection for a circuit arrangement having a transistor
In an embodiment, a drive circuit for a transistor includes an output for providing a drive signal to the transistor. The drive circuit monitors the transistor for an occurrence of an overload, changes into an overload protection state in which the drive circuit dri...
05/15/2012
8179647ESD power clamp for high-voltage applications
An ESD clamp includes a first power supply node; an ESD detection circuit coupled to the first power supply node and configured to detect an ESD event; and a bias circuit coupled to the first power supply node and configured to output a second power supply voltage t...
05/15/2012
8179210Electrical multilayer component with shielding and resistance structures
An electrical multilayer component includes a basic body having at least one stack of dielectric layers and electrode layers arranged alternately one above another. The component also includes an electrically non-connected shielding structure. ...
05/15/2012
8179194System and method for a reference generator
In one embodiment, a circuit for generating a reference voltage between a first output and a second output, has a first follower transistor that includes a first control node, a first follower node coupled to a first output, and a first supply node, and a second fol...
05/15/2012
8178965Semiconductor module having deflecting conductive layer over a spacer structure
A module includes a semiconductor chip and a conductive layer arranged over the semiconductor chip. The module also includes a spacer structure arranged to deflect the conductive layer away from the semiconductor chip. ...
05/15/2012
8178953On-chip RF shields with front side redistribution lines
A system on chip comprising a RF shield is disclosed. In one embodiment, the system on chip includes a RF component disposed on a chip, first redistribution lines disposed above the system on chip, the first redistribution lines coupled to I/O connection nodes. The ...
05/15/2012
8178930Structure to improve MOS transistor on-breakdown voltage
A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region ...
05/15/2012
8178902CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. A CMOS device is formed on a workpiece having a first region and a second region. A first gate dielectric material is deposited over the second region. A f...
05/15/2012
8178897Semiconductor ESD device and method of making same
A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity ty...
05/15/2012
8178588Method and apparatus for reducing CO in a stream by conversion to a syngas for production of energy
A system and method for reducing the CO2 in a gaseous stream, such as an exhaust stream, from a power plant or industrial plant, like a cement kiln, is disclosed. A preferred embodiment includes providing the gaseous stream to pyrolysis reactor along with...
05/15/2012
8178437Barrier material and process for Cu interconnect
A semiconductor diffusion barrier layer and its method of manufacture is described. The barrier layer includes of at least one layer of TaN, TiN, WN, TbN, VN, ZrN, CrN, WC, WN, WCN, NbN, AlN, and combinations thereof. The barrier layer may further include a metal ri...
05/15/2012
8177862Thermal compressive bond head
A method includes allowing a work piece having a solder bump to contact a bond head; heating the bond head until the solder bump is melted; and conducting a cooling media into the bond head to cool the solder bump and to solidify the solder bump. ...
05/15/2012
8177425Temperature-measuring device
A temperature-measuring device with a sensing head and a pipe piece is disclosed. The sensing head is embedded in the pipe piece. The pipe piece is provided for conducting a medium whose temperature is detected by the sensing head. ...
05/15/2012
8177179Locking sensor
A locking sensor for locking into the recess of a housing with a sensor body, of locking elements, that are arranged on the sensor body and that extend in the direction of a lengthwise axis over a length. The locking elements have steps and at least two steps are sp...
05/15/2012
8176552Computer system, computer program product and method for assessing a profile of a computer system
A method for maintaining a computer system on the basis of an access profile and a change profile is disclosed. The computer system includes at least one workstation computer and a maintenance computer. The invention further relates to a method for providing an acce...
05/08/2012
8176195Media distribution with service continuity
System and methods for media distribution are described. In one embodiment, a method of media distribution includes rendering of a media to a user, stopping the rendering of the media, and storing remaining media not rendered to the user in a user server. The method...
05/08/2012
8175586Method for implementing one card multi-number service
Embodiments of the present invention disclose a method for implementing a One Card Multiple-Number (OCMN) service, which includes: establishing a mapping relation between an internal network number of a user and at least one external number of the user; determining ...
05/08/2012
8174867Negative-voltage generator with power tracking for improved SRAM write ability
An integrated circuit structure includes a static random access memory (SRAM) cell; a first power supply node connected to the SRAM cell, wherein the first power supply node is configured to provide a first positive power supply voltage to the SRAM cell; and a bit-l...
05/08/2012
8174366Interrogator and interrogation system employing the same
An interrogator, methods of discerning the presence of an object, and interrogation systems employing the same. In one embodiment, the interrogation systems include multiple interrogators that communicate with a base command unit to track a location of an object. In...
05/08/2012
8174169Piezoelectric transformer
A piezoelectric transformer with a body that includes a first functional part and a second functional part is disclosed. The second functional part has inner electrodes, located in the body, which are connected to outer electrodes of this part. The first outer elect...
05/08/2012
8174129Silicon-based thin substrate and packaging schemes
A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of traces are formed in the silicon-based thin package substrate, connecting...
05/08/2012
8174124Dummy pattern in wafer backside routing
A device includes a semiconductor substrate including a front side and a backside. A through-substrate via (TSV) penetrates the semiconductor substrate. A dummy metal line is formed on the backside of the semiconductor substrate, and may be connected to the dummy TS...
05/08/2012
8174091Fuse structure
An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-la...
05/08/2012
8174073Integrated circuit structures with multiple FinFETs
A semiconductor structure includes a semiconductor substrate; and a first Fin field-effect transistor (FinFET) and a second FinFET at a surface of the semiconductor substrate. The first FinFET includes a first fin; and a first gate electrode over a top surface and s...
05/08/2012
8174071High voltage LDMOS transistor
An LDMOS transistor structure and methods of making the same are provided. The structure includes a gate electrode extended on an upper boundary of an extension dielectric region that separates the gate electrode from the drain region of the LDMOS transistor. Moreov...
05/08/2012
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