Did You Know...
...that in the early 1940s GE engineer James Wright was charged with a task of utmost importance to the war effort: develop a cheap substitute for rubber that could be used to produce tires, gas masks and a whole host of military gear. Wright tackled the task diligently -- and wound up inventing Silly Putty.
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| Number | Title | Issue Date |
| 6066877 | Vertical power MOSFET having thick metal layer to reduce distributed resistance The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick me... | 05/23/2000 |
| 6060752 | Electrostatic discharge protection circuit An electrostatic discharge (ESD) protection circuit includes diodes connected in series back-to-back between the signal input and power supply terminals of the circuit to be protected. This allows the input signal to rise a selected distance above the sup... | 05/09/2000 |
| 6021582 | Temperature control of parylene dimer An apparatus for vaporizing Parylene AF dimer powder includes a vaporizer having a housing, a cooling coil surrounding the housing and an isolation valve coupled to an outlet end of the housing. During use, the vaporizer and a valve and manifold assembly ... | 02/08/2000 |
| 6000947 | Method of fabricating transistor or other electronic device using scanning probe microscope A scanning probe microscope is used to fabricate a gate or other feature of a transistor by scanning a silicon substrate in which the transistor is to be formed. An electric field is created between the cantilever tip and the silicon substrate, thereby ca... | 12/14/1999 |
| 5888371 | Method of fabricating an aperture for a near field scanning optical microscope An extremely small aperture is formed using a sharp conductive tip. The aperture may be in the form of a transparent window or an open aperture. In a first embodiment, the conductive tip is positioned adjacent a layer of titanium and a voltage is applied ... | 03/30/1999 |
| 5885661 | Droplet jet method for coating flat substrates with resist or similar materials An apparatus and method are provided for efficiently and effectively coating a substantially flat surface, i.e., a substrate, with a high-viscosity chemical such as photoresist. The chemical is dispensed through a piezo electrically controlled droplet jet... | 03/23/1999 |
| 5883705 | Atomic force microscope for high speed imaging including integral actuator and sensor A cantilever for a scanning probe microscope (SPM) includes a piezoelectric element in a thicker, less flexible section near the fixed base of the cantilever and a piezoresistor in a thinner, more flexible section near the free end of the cantilever. When... | 03/16/1999 |
| 5877538 | Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench A trench power MOSFET includes a body region which is not shorted to the source region and which is entirely covered by the source region within each cell of the MOSFET. The body region within each MOSFET cell is brought to the surface of the substrate (o... | 03/02/1999 |
| 5873205 | Privacy panel for use with open office furniture systems A moveable panel is described for providing privacy for a person in a work station or other location behind an arrangement of one or more stationary panels. The privacy panel is suspended from a pair of linear bearings which ride along a horizontal carrie... | 02/23/1999 |
| 5856692 | Voltage-clamped power accumulation-mode MOSFET An accumulation-mode power MOSFET includes a trenched gate that is formed in a semiconductor material of a first conductivity type. A region of second conductivity type is formed in the substrate (which may include an epitaxial layer) and a PN junction fo... | 01/05/1999 |
| 5843233 | Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant g... | 12/01/1998 |
| 5835315 | Wafer including scribe line grooves for separating thin film heads and process for making the same A method for pattern-etching thick alumina layers in the manufacture of thin film heads (TFH) by using compatible metallic mask layers and an alumina etchant. The deep alumina etching enables the formation of scribe-line grooves of street and alleys acros... | 11/10/1998 |
| 5825145 | Quiet commutation circuit for an electric motor A commutation control circuit for a conventional brushless DC motor. The circuit reduces power supply noise normally induced when current is switched from one pair of motor windings to the next. The motor conventionally includes a number of windings, each... | 10/20/1998 |
| 5798140 | Oscillatory chuck method and apparatus for coating flat substrates An apparatus and method are provided for efficiently and effectively coating a substantially flat surface, i.e., a substrate, with a high-viscosity liquid chemical, such as photoresist. The flat surface is oscillated by rotating the surface in one directi... | 08/25/1998 |
| 5790378 | High density integrated circuit package including interposer An integrated circuit package includes a first lead frame attached to the top surface of a substrate or interposer on which the die is mounted, and a second lead frame attached to the bottom surface of the interposer. The first lead frame is connected to ... | 08/04/1998 |
| 5778554 | Wafer spin dryer and method of drying a wafer In a spin dryer for semiconductor wafers, the wafer is held beneath a platen with its active side (i.e., the side containing the components or circuitry) facing upward. One or more nozzles spray rinse water on the top surface of the wafer and the wafer is... | 07/14/1998 |
| 5773864 | CMOS interface circuit formed in silicon-on-insulator substrate A CMOS circuit formed in a silicon-on-insulator (SOI) substrate includes MOSFETs having drain and body diffusions which extend through the silicon layer to the surface of the insulating layer. Each of drains of the N-channel and P-channel MOSFETs serves a... | 06/30/1998 |
| 5770503 | Method of forming low threshold voltage vertical power transistor using epitaxial technology A low threshold voltage power DMOS transistor structure is disclosed having a lightly doped channel region formed in a shallow layer of relatively lightly doped epitaxial silicon. The light doping of the shallow epitaxial layer minimizes variations in thr... | 06/23/1998 |
| 5769951 | Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant g... | 06/23/1998 |
| 5767643 | Commutation delay generator for a multiphase brushless DC motor A commutation control circuit provides a substantially periodic series of commutation signals to a conventional motor sequencer. The control circuit includes a frequency-to-current converter that receives the series of commutation signals and outputs a cu... | 06/16/1998 |
| 5767546 | Laternal power mosfet having metal strap layer to reduce distributed resistance To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passiva... | 06/16/1998 |
| 5745980 | Method of fabricating magnetic recording thin film head having pinched-gap An inductive pinched-gap thin film head (TFH) device having pole-tips which are in substantial contact along their side-edges, thereby precisely defining a pinched-gap segment. The substantial contact between the pole-tips' side-edges effectively eliminat... | 05/05/1998 |
| 5747891 | Method of blocking bidirectional flow of current A bidirectional current blocking switch is disclosed. The switch includes a four-terminal MOSFET in which there is no source-body short. The voltages applied to the source and drain terminals are both higher than the voltage applied to the body terminal (... | 05/05/1998 |
| 5744994 | Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp An N-channel power MOSFET is fabricated with its source and body connected together and biased at a positive voltage with respect to its drain. The gate is controlled by a switch which alternately connects the gate to the source or to a voltage which turn... | 04/28/1998 |
| 5742377 | Cantilever for scanning probe microscope including piezoelectric element and method of using the same A cantilever for a scanning probe microscope (SPM) includes a piezoelectric element in a thicker, less flexible section near the fixed base of the cantilever and a piezoresistor in a thinner, more flexible section near the free end of the cantilever. When... | 04/21/1998 |
| 5734221 | Vessel shapes and coil forms for electrodeless discharge lamps A discharge vessel for an electrodeless lamp having a pair of substantially parallel front and back walls. In one implementation, the front wall of the discharge vessel has a collimating structure, e.g a fresnel lens, for directing the light in a preferen... | 03/31/1998 |
| 5731732 | Gate drive technique for a bidirectional blocking lateral MOSFET A gate drive circuit for a bidirectional blocking MOSFET, the bidirectional blocking MOSFET being characterized in the source region is not shorted to the body region. In one embodiment, the gate drive circuit includes diodes connected between the source/... | 03/24/1998 |
| 5726477 | Threshold adjustment in field effect semiconductor devices A process for fabricating both CMOS and LDMOS transistors includes a high temperature, long diffusion subsequent to deposition of the polysilicon gate for forming MOSFET body regions. Similarly, a process for fabricating both CMOS and NPN transistors incl... | 03/10/1998 |
| 5726594 | Switching device including power MOSFET with internal power supply circuit An N-channel power MOSFET includes a storage capacitor and a pair of diodes connected between the gate and drain terminals, respectively, and the capacitor. Since at any given time the voltage at either the drain or the gate of the MOSFET is high, a charg... | 03/10/1998 |
| 5703740 | Toroidal thin film head A low-noise toroidal thin film head ("TFH") device has low coil resistance and inductance, especially suitable for very high magnetic recording areal densities and channel frequencies. The length of a toroidal coil turn is only about 20-30% that of the le... | 12/30/1997 |
| 5691959 | Stylus position digitizer using acoustic waves A digitizer uses acoustic waves originating from a stylus to determine the position of the stylus on a plate. The acoustic waves are introduced into the plate from the tip of the stylus and are detected by a plurality of detectors positioned at various po... | 11/25/1997 |
| 5688725 | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance In a vertical trench MOSFET, a layer of increased dopant concentration is formed in a lightly-doped or "drift" region which separates the body region from the drain region of the MOSFET. The layer of increased dopant concentration denominated a "delta" la... | 11/18/1997 |
| 5689209 | Low-side bidirectional battery disconnect switch A bidirectional battery disconnect switch, i.e., a switch which is capable of blocking a voltage in either direction when open and conducting a current in either direction when closed, is disclosed. The switch includes a four-terminal MOSFET having no sou... | 11/18/1997 |
| 5689144 | Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance The threshold voltage and on-resistance of a four-terminal power MOSFET switch are reduced by partially forward-biasing (to, for example, 0.5 V) the junction between the body and electrical source of the MOSFET. Preferably, as the MOSFET is switched on an... | 11/18/1997 |
| 5687328 | Method and apparatus for aligning data for transfer between a source memory and a destination memory over a multibit bus A data alignment logic cell properly aligns the individual data units (e.g., bytes) in a block of data that is transferred in a multiple bit bus such that the data units in the block are transferred to desired lanes of the bus. The data alignment logic ce... | 11/11/1997 |
| 5682050 | Bidirectional current blocking MOSFET for battery disconnect switching including protection against reverse connected battery charger A bidirectional current blocking switch is disclosed. The switch includes a four-terminal MOSFET in which there is no source-body short. The voltages applied to the source and drain terminals are both higher than the voltage applied to the body terminal (... | 10/28/1997 |
| 5677205 | Method for forming electrostatic discharge protection device for integrated circuit An electrostatic discharge (ESD) device includes a pair of depletion mode MOSFETs connected drain-to-drain in a series path between an input terminal and an output terminal, the gate of each MOSFET being connected to its source. A first diode having a rel... | 10/14/1997 |
| 5674766 | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer A MOSFET switch with a gate formed in a trench has a drain which includes a region of relatively high resistivity adjacent the trench and a region of relatively low resistivity further away from the trench. The drain may also include a "delta" layer havin... | 10/07/1997 |
| 5673163 | Pinched-gap magnetic recording thin film head An inductive pinched-gap thin film head (TFH) device having pole-tips which are in substantial contact in two areas, thereby precisely defining a pinched-gap segment. The substantial contact between the pole-tips effectively eliminates all flux lines eman... | 09/30/1997 |
| 5666190 | Method of performing lithography using cantilever array A lithography system includes a plurality of cantilevers, preferably formed in a silicon wafer. Each cantilever includes a tip located near the free end of the cantilever and an electrical conduction path which extends along the length of the cantilever t... | 09/09/1997 |
