Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 5019878 | Programmable interconnect or cell using silicided MOS transistors A programmable device (10) is formed from a silicided MOS transistor. The transistor 10) is formed at a face of a semiconductor layer (12), and includes a diffused drain region (17, 22) and a source region (19, 24) that are spaced apart by a channel regio... | 05/28/1991 |
| 5003365 | Bipolar transistor with a sidewall-diffused subcollector A bipolar transistor with a subcollector diffused from a trench contact is disclosed. The bipolar transistor is formed by an n-type collector region disposed over a p-type substrate, or over a p-type epitaxial layer disposed over a p+ substrate. A trench ... | 03/26/1991 |
| 4998150 | Raised source/drain transistor A raised source/drain transistor is provided having thin sidewall spacing insulators (54) adjacent the transistor gate (48). A first sidewall spacer (64) is disposed adjacent thin sidewall spacing insulator (54) and raised source/drain region (60). A seco... | 03/05/1991 |
| 4997781 | Method of making planarized EPROM array An array of floating gate memory cells is formed at a face of a semiconductor layer (10). The array includes a plurality of elongate spaced-apart parallel source/drain regions (12). A thick dielectric layer (14) is formed on the face. A plurality of space... | 03/05/1991 |
| 4996668 | Erasable programmable memory EEPROM memories with crosspoint cells using buried source and drain lines plus merged floating gate transistors with floating gate coupling to control gate over the buried line insulator for high packing plus low voltage operation.... | 02/26/1991 |
