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| Number | Title | Issue Date |
| 7693347 | Smear correction in a digital camera Methods and apparatus to measure small shifts and rotations of video images captured in short succession after a first reference video image is captured, and to add the sequence of captures while shifting or rotating back the shifted or rotated images, in order to i... | 04/06/2010 |
| 5968840 | Dynamic random access memory using silicon-on-insulator techniques The present invention discloses a method for making a dynamic random access memory by silicon-on-insulator comprising the steps of: dividing a cell area and a peripheral area on a first silicon substrate and recessing just the cell area where a memory dev... | 10/19/1999 |
| 5744374 | Device and manufacturing method for a ferroelectric memory A ferroelectric memory device of an MFIS FET structuring using a yttrium oxide film as a buffer film and a manufacturing method of the memory device are provided. The MFIS FET includes a p-type silicon substrate, a field oxide film formed in a device isol... | 04/28/1998 |
| 5720846 | Construction of a chamber casing in a plasma etching system A plasma etching system is disclosed that minimizes energy loss due to the dissipation of plasma, maintaining high plasma density, and thus increasing ionization efficiency. By this construction, wafers may be etched under low pressure, which reduces the ... | 02/24/1998 |
| 5700603 | Semiconductor device having X-ray lithographic mask and method for manufacturing the same In a mask for X-ray lithography and a method for manufacturing the same, a mask pattern is formed on a first silicon substrate and then an intermediate material is coated on the mask pattern in order to protect the mask pattern and further the intermediat... | 12/23/1997 |
| 5698882 | LDD Polysilicon thin-film transistor In an LDD polysilicon thin-film transistor, the active layer is formed in a single body and the upper surface thereof is oxidized. A gate insulating layer has a bird's beak type structure and the source and drain region are simultaneously formed in high a... | 12/16/1997 |
